CMSSH-3E CMSSH-3CE
CMSSH-3AE CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSSH-3E
Series types are Enhanced Versions of the
CMSSH-3 Series of Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
CMSSH-3E: SINGLE MARKING CODE: 31E
CMSSH-3AE: DUAL, COMMON ANODE MARKING CODE: 3AE
CMSSH-3CE: DUAL, COMMON CATHODE MARKING CODE: 3CE
CMSSH-3SE: DUAL, IN SERIES MARKING CODE: 3SE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V
Continuous Forward Current IF 200 mA
Peak Repetitive Forward Current IFRM 350 mA
Peak Forward Surge Current, tp=10ms IFSM 750 mA
Power Dissipation PD 250 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=25V 90 500 nA
IR V
R=25V, TA=100°C 25 100 μA
BVR I
R=100µA 40 50 V
VF I
F=2.0mA 0.29 0.33 V
VF I
F=15mA 0.37 0.42 V
VF I
F=100mA 0.61 0.80 V
VF I
F=200mA 0.65 1.0 V
CT V
R=1.0V, f=1.0MHz 7.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns
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♦ Enhanced specification
♦♦ Additional Enhanced specification
SOT-323 CASE
FEATURED ENHANCED SPECIFICATIONS:
♦ IF from 100mA max to 200mA MAX
♦ BVR from 30V min to 40V MIN
♦ VF from 1.0V max to 0.8V MAX
R2 (9-February 2010)
www.centralsemi.com