580 Pleasant St. Watertown, MA 02472 PH: (617) 926-0404 FAX: (617) 924-1235 2N2218A Features * * * * * SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /251 Collector - Base Voltage 75V Collector - Current 800 mA Medium Current, Bipolar Transistor Available in TO-5 SMALL SIGNAL BIPOLAR NPN SILICON TO-39 Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD T J, Tstg VALUE 50 75 6 800 0.8 4.6 3.0 17.0 - 55 to +200 UNIT Vdc Vdc Vdc mAdc WATTS mW/C WATTS mW/C C SYMBOL R JA R JC MAX 217 59 UNIT C/W C/W PD Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A Electrical Characteristics (TA = 25C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage ( IC = 10 Adc, IE = 0 ) Emitter - Base Breakdown Voltage ( IE = 10 Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, T A = 150 C ) Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ( VEB = 6 Vdc ) SYMBOL V(BR)CEO ON CHARACTERISTIC DC Current Gain ( IC = 0.1 mA dc, VCE = 10 Vdc ) (1) ( IC = 1 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc ) (1) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = - 55C ) (1) Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL hFE MIN MAX UNIT 50 Vdc 75 Vdc 6 Vdc V(BR)CBO V(BR)EBO ICES 10 nAdc 10 10 nAdc Adc 10 10 nAdc Adc MAX UNIT ICBO IEBO MIN 30 35 40 40 20 35 150 120 VCE(sat) 0.3 1.0 Vdc Vdc 1.2 2.0 Vdc Vdc VBE(sat) 0.6 1. Pulse Test: Pulse Width 300 s, Duty Cycle .2% MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A Electrical Characteristics (TA = 25C unless otherwise noted) SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz f 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz f 1 MHz ) SYMBOL Cobo SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL ton MIN MAX UNIT 8.0 pF 25 pF MAX UNIT 35 ns 300 ns MAX UNIT Cibo MIN toff Small - Signal AC Characteristics (TA = 25C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 1 mA, VCE = 10 V, f = 1kHz ) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 20 mA, VCE = 20 V, f = 100 MHz ) Spice Model SYMBOL hfe 35 |hfe| 2.5 (based upon typical device characteristics) Q2N2218A NPN ( IS = 21.2f + NE = 2.05 + NC = 1.605 + FC = 0.5 + ITF = 1.0 XTI = 3.0 IKF = 1.255 IKR = 0.8992 CJE = 29.6p XTF = 0.0 EG = 1.11 NK = 0.9394 RC = 0.0 MJE = 0.3333 VTF = 10.0 ) MIN 12 *1 VAF = 103.8 XTB = 1.5 CJC = 19.4p VJE = 0.75 BF = 90.7 BR = 1.031 MJC = 0.3333 TR = 275.0 n ISE = 3.34p ISC = 3.299p VJC = 0.75 TF= 564.5p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A TO-39 CASE OUTLINE DIE CHARACTERISTICS Back is Collector Chip Thickness is: 10 MILS TYP Metalization is: Top = Al, Back = Au DIE OUTLINE MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A FIGURE 1 Saturated Turn-on Time Test Circuit t FIGURE 2 MSCO933A 10-14-98 Saturated Turn-off Time Test Circuit DSW2N2218A <-> (34724) 2N2218A DC CURRENT GAIN VCE = 10 V hFE CURRENT GAIN 125 125 typ @ 25C 100 100 75 75 50 50 typ @ -55C 25 25 0 0 .0001 .001 .01 .1 1 IC COLLECTOR CURRENT (A) VCE, COLLECTOR-EMITTER (V) FIGURE 3 COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C 1.0 1.0 0.8 0.8 IC = 500 mA 0.6 0.6 IC = 150 mA 0.4 0.4 0.2 0.2 0.0 .0001 0.0 .001 .01 IB, BASE CURRENT .1 1 (A) FIGURE 4 MSCO933A 10-14-98 DSW2N2218A <-> (34724) VBE, BASE-EMITTER VOLTAGE (V) 2N2218A BASE SATURATION vs BASE CURRENT TJ = 25 C 1.25 1.25 IC = 500 ma 1.00 1.00 IC = 150 ma 0.75 0.75 0.50 .001 0.50 .01 .1 1 IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE (pF) JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz 30 30 25 25 CIBO 20 20 COBO 15 15 10 10 5 5 0 .01 .1 1 10 0 100 REVERSE JUNCTION VOLTAGE (V) FIGURE 6 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A SWITCHING TURN - 0N TIME TJ = 25 C IC/IB = 10 100 ton TIME (ns) 100 max. min. 10 10 10 1000 100 COLLECTOR CURRENT (mA) FIGURE 7 SWITCHING TURN - OFF TIME TJ = 25 C IC/IB = 10 1000 (ns) 1000 toff TIME max. min. 100 10 100 500 100 COLLECTOR CURRENT (mA) FIGURE 8 MSCO933A 10-14-98 DSW2N2218A <-> (34724) 2N2218A NORMALIZED GAIN NORMALIZED GAIN VS FREQUENCY TJ = 25C IC = 20 mA VCE = 20 V 1 1 .1 .1 .01 1 10 100 .01 1000 FREQUENCY MHz FIGURE 9 MSCO933A 10-14-98 DSW2N2218A <-> (34724)