MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
FeaturesFeatures
• Meets MIL 19500 /251
• Collector - Base Voltage 75V
• Collector - Current 800 mA
• Medium Current, Bipolar Transistor
• Available in TO-5
Maximum Ratings
RATING SYMBOL VALUE UNIT
Collector - Emitter Voltage VCEO 50 Vdc
Collector - Base Voltage VCBO 75 Vdc
Emitter - Base Voltage VEBO 6Vdc
Collector Current - Continuous IC800 mAdc
Total Device Dissipation @ TA = 25 °°C PD0.8WATTS
Derate above 25 °°C4.6 mW/°°C
Total Device Dissipation @ TC = 25 °°C PD3.0 WATTS
Derate above 25 °°C17.0 mW/°°C
Operating Junction&Storage Temperature Range TJ, Tstg - 55 to +200 °°C
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX UNIT
Thermal Resistance, Junction to Ambient Rθθ JA 217 °°C/W
Thermal Resistance, Junction to Case Rθθ JC 59 °°C/W
580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
SMALL SIGNAL
BIPOLAR
NPN SILICON
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
TO-39
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC SYMBOL MIN MAX UNIT
Collector - Emitter Breakdown Voltage (1) V(BR)CEO
( IC = 10 mA dc, IB = 0 ) 50 Vdc
Collector - Base Breakdown Voltage V(BR)CBO
( IC = 10 µµAdc, IE = 0 ) 75 Vdc
Emitter - Base Breakdown Voltage V(BR)EBO
( IE = 10 µµAdc, IC = 0 ) 6Vdc
Collector - Emitter Cutoff Current ICES
( VCE = 50 Vdc ) 10 nAdc
Collector - Base Cutoff Current ICBO
( VCB = 60 Vdc, IE = 0 ) 10 nAdc
( VCB = 60 Vdc, IE = 0, TA = 150 °°C ) 10 µµAdc
Emitter - Base Cutoff Current IEBO
( VEB = 4 Vdc ) 10 nAdc
( VEB = 6 Vdc ) 10 µµAdc
ON CHARACTERISTIC SYMBOL MIN MAX UNIT
DC Current Gain hFE
( IC = 0.1 mA dc, VCE = 10 Vdc ) (1) 30
( IC = 1 mA dc, VCE = 10 Vdc ) (1) 35 150
( IC = 10 mA dc, VCE = 10 Vdc ) (1) 40
( IC = 150 mA dc, VCE = 10 Vdc ) (1) 40 120
( IC = 500 mA dc, VCE = 10 Vdc ) (1) 20
( I
C
= 10 mA dc, V
CE
= 10 Vdc, T
J
=
-
55°°C
) (1) 35
Collector - Emitter Saturation Voltage VCE(sat)
( IC = 150 mAdc, IB = 15 mAdc ) (1) 0.3 Vdc
( IC = 500 mAdc, IB = 50 mAdc ) (1) 1.0 Vdc
Base - Emitter Saturation Voltage VBE(sat)
( IC = 150 mAdc, IB = 15 mAdc ) (1) 0.6 1.2 Vdc
( IC = 500 mAdc, IB = 50 mAdc ) (1) 2.0 Vdc
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤.2%
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
Electrical Characteristics (TA = 25°C unless otherwise noted)
SMALL - SIGNAL CHARACTERISTICS SYMBOL MIN MAX UNIT
Output Capacitance Cobo
( VCB = 10 Vdc, IE = 0, 100kHz ≤≤ f ≤≤ 1 MHz ) 8.0 pF
Input Capacitance Cibo
( VEB = 0.5 Vdc, IC = 0, 100kHz ≤≤ f ≤≤ 1 MHz ) 25 pF
SWITCHING CHARACTERISTICS SYMBOL MIN MAX UNIT
Turn - On Time ton
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 =15 mAdc) ( See FIGURE 1 ) 35 ns
Turn - Off Time toff
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) 300 ns
Small - Signal AC Characteristics (TA = 25°C)
LOW FREQUENCY SYMBOL MIN MAX UNIT
Common - Emitter Forward Current Transfer Ratio hfe
( IC = 1 mA, VCE = 10 V, f = 1kHz )3 5
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio |hfe|
( IC = 20 mA, VCE = 20 V, f = 100 MHz )2.5 1 2
S p i c e M o d e l (based upon typical device characteristics) * 1
Q2N2218A NPN ( IS = 21.2f XTI = 3.0 EG = 1.11 VAF = 103.8 BF = 90.7 ISE = 3.34p
+ NE = 2.05 IKF = 1.255 NK = 0.9394 XTB = 1.5 BR = 1.031 ISC = 3.299p
+ NC = 1.605 IKR = 0.8992 RC = 0.0 CJC = 19.4p MJC = 0.3333 VJC = 0.75
+ FC = 0.5 CJE = 29.6p MJE = 0.3333 VJE = 0.75 TR = 275.0 n TF= 564.5p
+ ITF = 1.0 XTF = 0.0 VTF = 10.0 )
*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be
used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer.
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
TO-39 CASE OUTLINE
DIE OUTLINE
DIE CHARACTERISTICS
Back is Collector
Chip Thickness is:
10 MILS TYP
Metalization is:
Top = Al, Back = Au
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
FIGURE 1 Saturated Turn-on Time Test Circuit
FIGURE 2 Saturated Turn-off Time Test Circuit
t
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
FIGURE 3
FIGURE 4
.0001 .001 .01 .1 1
IC COLLECTOR CURRENT (A)
0
25
50
75
100
125
hFE CURRENT GAIN
0
25
50
75
100
125
DC CURRENT GAIN
VCE = 10 V
typ @ 25C
typ @ -55C
.0001 .001 .01 .1 1
IB, BASE CURRENT (A)
0.0
0.2
0.4
0.6
0.8
1.0
VCE, COLLECTOR-EMITTER (V)
0.0
0.2
0.4
0.6
0.8
1.0
COLLECTOR SATURATION vs BASE CURRENT
TJ = 25 C
IC = 500 mA
IC = 150 mA
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
FIGURE 5
FIGURE 6
.001 .01 .1 1
IB, BASE CURRENT (A)
0.50
0.75
1.00
1.25
VBE, BASE-EMITTER VOLTAGE (V)
0.50
0.75
1.00
1.25
BASE SATURATION vs BASE CURRENT
TJ = 25 C
IC = 150 ma
IC = 500 ma
.01 .1 1 10 100
REVERSE JUNCTION VOLTAGE (V)
0
5
10
15
20
25
30
JUNCTION CAPACITANCE (pF)
0
5
10
15
20
25
30
JUNCTION CAPACITANCE
TJ = 25 C 100 kHz < f < 1 MHz
COBO
CIBO
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
FIGURE 7
FIGURE 8
10 100 1000
COLLECTOR CURRENT (mA)
100
10
100
ton TIME (ns)
100
10
100
SWITCHING TURN - 0N TIME
TJ = 25 C IC/IB = 10
min.
max.
50010 100
COLLECTOR CURRENT (mA)
1000
100
1000
toff TIME (ns)
1000
100
1000
SWITCHING TURN - OFF TIME
TJ = 25 C IC/IB = 10
min.
max.
MSCO933A 10-14-98 DSW2N2218A <-> (34724)
2N2218A
FIGURE 9
1 10 100 1000
FREQUENCY MHz
.01
.1
1
NORMALIZED GAIN
.01
.1
1
NORMALIZED GAIN VS FREQUENCY
TJ = 25C IC = 20 mA VCE = 20 V