PZT2222A - INFINEON TECHNOLOGIES AG

December, 2018 − Rev. 11

1Publication Order Number:

PZT2222AT1/D

PZT2222A

NPN Silicon Planar

Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear

and switching applications. The device is housed in the SOT−223

package which is designed for medium power surface mount

applications.

Features

•PNP Complement is PZT2907AT1

•The SOT−223 Package Can be Soldered Using Wave or Reflow

•SOT−223 Package Ensures Level Mounting, Resulting in Improved

Thermal Conduction, and Allows Visual Inspection of Soldered

Joints

•The Formed Leads Absorb Thermal Stress During Soldering,

Eliminating the Possibility of Damage to the Die

•Available in 12 mm Tape and Reel

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 40 Vdc

Collector−Base Voltage VCBO 75 Vdc

Emitter−Base Voltage

(Open Collector)

VEBO 6.0 Vdc

Collector Current IC600 mAdc

Total Power Dissipation

up to TA = 25°C (Note 1)

1.5

Storage Temperature Range Tstg −65 to +150 °C

Junction Temperature°Range TJ−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x

0.059 inches; mounting pad for the collector lead min. 0.93 inches2.

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Resistance,

Junction−to−Ambient

RqJA 83.3 °C/W

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

TL260

°C

Sec

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

www.onsemi.com

MARKING DIAGRAM

SOT−223 (TO−261)

CASE 318E−04

STYLE 1

Device Package Shipping†

ORDERING INFORMATION

PZT2222AT1G SOT−223

(Pb−Free)

1,000 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

A = Assembly Location

Y = Year

M = Month Code

G= Pb−Free Package

BASE

COLLECTOR

2, 4

EMITTER

SOT−223 PACKAGE

NPN SILICON TRANSISTOR

SURFACE MOUNT

PZT2222AT3G SOT−223

(Pb−Free)

4,000 Tape & Reel

AYM

P1FG

(Note: Microdot may be in either location)

SPZT2222AT1G SOT−223

(Pb−Free)

1,000 Tape & Reel

123

PZT2222A

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 −Vdc

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO °75°−Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 −Vdc

Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = −3.0 Vdc) IBEX −20 nAdc

Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = −3.0 Vdc) ICEX −10 nAdc

Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO −100 nAdc

Collector−Base Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0, TA = 125°C)

ICBO

−

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE

100

−

300

−

Collector−Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.3

1.0

Vdc

Base−Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.6

−

1.2

2.0

Vdc

Input Impedance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

°hie°

2.0

0.25

8.0

1.25

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre

−

8.0x10−4

4.0x10−4

−

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

ťhfe ť

300

375

−

Output Admittance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

°hoe°

5.0

200

mmhos

Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F−4.0 dB

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

300 −

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc−8.0 pF

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce−25 pF

SWITCHING TIMES (TA = 25°C)

Delay Time (VCC = 30 Vdc, IC = 150 mAdc,

IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)

Figure 1

td−10 ns

Rise Time tr−25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB(on) = IB(off) = 15 mAdc)

Figure 2

ts−225 ns

Fall Time tf−60

PZT2222A

www.onsemi.com

90%

10%

VCC

ViD.U.T.

Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time

Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time

Vi = −0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W.

PULSE GENERATOR: OSCILLOSCOPE:

PULSE DURATION tp3 200 ns INPUT IMPEDANCE Zi> 100 kW

RISE TIME tr3 2 ns INPUT CAPACITANCE Ci< 12 pF

DUTY FACTOR d= 0.02 RISE TIME tr< 5 ns

tf100 ms

-13.8 V

+16.2 V

TIME

VCC

OSCILLOSCOPE

D.U.T.

VBB

TYPICAL CHARACTERISTICS

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

10001001010.1

0.01

0.1

10001001010.1

0.2

0.3

0.5

0.6

0.8

0.9

1.1

1.2

VCE, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

TA = 25°C

TA = −55°C

TA = 150°C

IC/IB = 10

0.4

0.7

1.0

TA = 25°C

TA = −55°C

TA = 150°C

IC/IB = 10

PZT2222A

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 5. DC Current Gain vs. Collector

Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

10001001010.1

100

1000

1001010.10.010.001

0.2

0.6

0.8

1.0

1.4

1.6

2.0

Figure 7. Base−Emitter Turn−On Voltage vs.

Collector Current

Figure 8. Capacitance

IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)

10001001010.1

0.2

0.3

0.4

0.6

0.7

0.8

1.0

1.1

1001010.1

100

Figure 9. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

100101

100

1000

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(ON), BASE−EMITTER ON VOLTAGE (V)

C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT (mA)

TA = 25°C

TA = −55°C

TA = 150°C

VCE = 6 V

0.4

1.2

1.8 TA = 25°C

600 mA

300 mA

100 mA

10 mA

IC = 1 mA

0.5

0.9

TA = 25°C

TA = −55°C

TA = 150°C

VCE = 2 V

Cibo

Cobo

0.0001

1 s

0.1

0.01

0.001

Single Pulse Test at TA = 25°C

SOT−223 (TO−261)

CASE 318E−04

ISSUE R

DATE 02 OCT 2018

SCALE 1:1

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98ASB42680B

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2

SOT−223 (TO−261)

CASE 318E−04

ISSUE R

DATE 02 OCT 2018

STYLE 4:

PIN 1. SOURCE

2. DRAIN

3. GATE

4. DRAIN

STYLE 6:

PIN 1. RETURN

2. INPUT

3. OUTPUT

4. INPUT

STYLE 8:

CANCELLED

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

STYLE 7:

PIN 1. ANODE 1

2. CATHODE

3. ANODE 2

4. CATHODE

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

STYLE 2:

PIN 1. ANODE

2. CATHODE

3. NC

4. CATHODE

STYLE 9:

PIN 1. INPUT

2. GROUND

3. LOGIC

4. GROUND

STYLE 5:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. GATE

STYLE 11:

PIN 1. MT 1

2. MT 2

3. GATE

4. MT 2

STYLE 12:

PIN 1. INPUT

2. OUTPUT

3. NC

4. OUTPUT

STYLE 13:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A = Assembly Location

Y = Year

W = Work Week

XXXXX = Specific Device Code

G= Pb−Free Package

GENERIC

MARKING DIAGRAM*

AYW

XXXXXG

(Note: Microdot may be in either location)

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98ASB42680B

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 2 OF 2

SOT−223 (TO−261)

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