TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications Unit: mm 0.40.1 1.27 0.50.1 Low drain-source ON-resistance : RDS (ON) = 23 m (typ.) (VGS = - 4.5V * High forward transfer admittance :|Yfs| = 14 S (typ.) * Low leakage current : IDSS = -10 A (VDS = -12 V) * Enhancement mode 5.00.2 Small footprint due to compact and slim package * 6.00.3 * 0.05 M A 5 8 0.150.05 4 1 0.595 5.00.2 A 0.950.05 0.1660.05 : Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A ) 0.05 S 0.60.1 1 4.250.2 Absolute Maximum Ratings (Ta = 25C) Characteristics 8 Symbol Rating Unit Drain-source voltage VDSS -12 V Drain-gate voltage (RGS = 20 k) VDGR -12 V Gate-source voltage VGSS 8 V (Note 1) ID -6 Pulse (Note 1) IDP -24 Drain power dissipation (Tc = 25C) PD 20 Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 EAS 25.1 mJ Avalanche current IAR -6 A Repetitive avalanche energy (Tc = 25C) (Note 4) EAR 0.8 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Single pulse avalanche energy (Note 3) 5 1, 2, 3: Source 5, 6, 7, 8: Drain A 0.80.1 4: Gate JEDEC JEITA TOSHIBA DC Drain current 1.10.2 4 3.50.2 S 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration W 8 7 6 5 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2010-03-02 TPCA8105 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc = 25 ) Rth (ch-c) 6.25 C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 C/W Marking (Note 5) TPCA 8105 Type Lot No. Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (b) (a) Note 3: VDD = -10 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: Weekly code: (Three digits) Week of manufacture (01 for first week of a year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2010-03-02 TPCA8105 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 8 V, VDS = 0 V 10 A Drain cut-off current IDSS VDS = -12 V, VGS = 0 V -10 A V (BR) DSS ID = -10 mA, VGS = 0 V -12 V (BR) DSX ID = -10 mA, VGS = 8 V -4 VDS = -10 V, ID = -200 A -0.5 -1.2 VGS = -1.8 V, ID = -1.5 A 65 92 VGS = -2.5 V, ID = -3.0 A 36 51 VGS = -4.5 V, ID = -3.0 A 23 33 VDS = -10 V, ID = -3.0 A 7 14 1600 260 335 7 13 Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time tr VDS = -10 V, VGS = 0 V, f = 1 MHz VGS 0V -5 V ton Switching time Fall time Turn-off time ID = -3.0A Output RL = 2 Gate threshold voltage 4.7 Drain-source breakdown voltage tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain ("Miller") charge Qgd VDD -6 V Duty < = 1%, tw = 10 s VDD -10 V, VGS = -5 V ID = -6 A V V m S pF ns 21 68 18 14.5 3.5 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP -24 A 1.2 V VDSF IDR = -6 A, VGS = 0 V 3 2010-03-02 TPCA8105 ID - VDS -2.5 -1.8 -1.7 (A) -4 -1.6 -3 -1.5 -2 VGS = -1.4 V -1 -8 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS -1.8 -6 -1.7 -4 -1.6 -1.5 -2 VGS = -1.4 V 0 0 -1.0 (V) -1 -2 VDS (V) (A) Drain-source voltage ID Drain current Ta = 25C Ta = -55C -2 Ta = 100C 0 0 -0.5 -1.0 -1.5 Gate-source voltage -2.0 VGS -0.4 -0.3 -0.2 ID = -6 A -0.1 -3 A 0 0 -2.5 (V) -1.5 A -2 -4 (S) Drain-source ON-resistance RDS (ON) (m) Yfs Forward transfer admittance Ta = -55C 10 Ta = 100C 1 -1 Drain current -10 ID -8 VGS -10 (V) RDS (ON) - ID Ta = 25C 0.1 -0.1 -6 Gate-source voltage 1000 Common source VDS = -10 V Pulse test (V) Common source Ta = 25C Pulse test |Yfs| - ID 100 VDS -5 VDS - VGS -6 -4 -4 -0.5 Common source VDS = -10 V Pulse test -8 -3 Drain-source voltage ID - VGS -10 -1.9 -5 Common source Ta = 25C Pulse test 0 0 -2.5 -2 Common source Ta = 25C Pulse test -3 -4 -2 -3 Drain current ID Drain current -1.9 -4.5 (A) -4 -5 ID - VDS -10 ID -5 Common source Ta = 25C Pulse test -2.5 V VGS = -4.5 V 10 1 -0.1 -100 -1.8 V 100 -1 Drain currrent (A) 4 -10 ID -100 (A) 2010-03-02 TPCA8105 RDS (ON) - Ta 160 IDR - VDS -100 Pulse test Drain-source ON-resistance RDS (ON) (m ) Common source Ta = 25C (A) Common source Pulse test Drain reverse current IDR 120 ID = -2.5 A 80 VGS = -1.8 V -6 A ID = -1.5 A 40 ID = -1.5, -2.5, -6 A -4.5 V 0 -80 -2.5 A ID = -1.5 A -2.5 V -40 0 40 80 Ambient temperature Ta 120 -4.5 -1.8 VGS = 0 V 0.4 (C) 0.8 Vth (V) -2.0 Capacitance Gate threshold voltage 1000 Coss C (pF) Ciss Crss 100 -1 -10 Drain-source voltage 1.6 VDS 2.0 (V) Vth - Ta VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 1.2 Drain-source voltage Capacitance - VDS 10000 -1 -10 -1 0 160 -2.5 -1.0 -0.5 0 -80 -100 VDS -1.5 Common source VDS = -10 V ID = -200 A Pulse test (V) -40 0 40 Ambient temperature 80 Ta 120 160 (C) Dynamic input/output characteristics Common source -20 Ta = 25C -16 Pulse test -12 -12 VGS -8 VDS VDD = -10 V -4 0 0 -8 -2.5 V -4 -5 V 8 16 Total gate charge 24 Qg 32 VGS (V) ID = -6 A -16 Gate-source voltage Drain-source voltage VDS (V) -20 0 40 (nC) 5 2010-03-02 TPCA8105 rth - tw rth (/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (3) Tc=25 Transient thermal impedance 100 (1) 10 (3) 1 SINGLE PULSE 0.1 0.001 0.01 0.1 1 Pulse width (s) PD - Tc (W) PD (1) 2.5 Drain power dissipation 2.0 (2) 1.5 1.0 0.5 0 0 40 80 Ambient temperature 1000 25 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s PD (W) tw 100 PD - Ta 3.0 Drain power dissipation 10 120 Ta 20 15 10 5 0 160 (C) 0 40 80 Case temperature 120 Tc 160 (C) Safe operating area -100 t=1ms 10ms -10 ID max (Continuous) ID (A) ID max (Pulsed) * Drain current DC OPEATION -1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 -0.1 -1 Drain-source voltage -10 VDS -100 (V) 6 2010-03-02 TPCA8105 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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