Specification Comparison
Vishay Siliconix
Document Number: 72893
22-Mar-04
www.vishay.com
1
Si4804BDY vs. Si4804DY
Description: Dual N-Channel, 30-V (D-S) MOSFET
Package: SOIC-8
Pin Out: Identical
Part Number Replacements:
Si4804BDY Replaces Si4804DY
Si4804BDY—E3 (Lead Free version) Replaces Si4804DY
Si4804BDY-T1 Replaces Si4804DY-T1
Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1
Summary of Performance:
The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter Symbol Si4804BDY Si4804DY Unit
Drain-Source Voltage VDS 30 30
V
Gate-Source Voltage VGS "20 "20 V
Continuous Drain Current
TA = 25_C
ID
7.5 7.5
Continuous Drain Current TA = 70_CID6 6
A
Pulsed Drain Current IDM 30 20 A
Continuous Source Current (MOSFET Diode Conduction) IS2.3 1.7
Power Dissipation
TA = 25_C
PD
1.7 2.0
W
Power Dissipation TA = 70_CPD2.0 1.3 W
Operating Junction and Storage Temperature Range Tj and Tstg −55 to 150 −55 to 150 _C
Maximum Junction-to-Ambient RthJA 62.5 62.5 _C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Si4804BDY Si4804DY
Parameter Symbol Min Typ Max Min Typ Max Unit
Static
Gate-Threshold Voltage VG(th) 0.8 3.0 0.8 V
Gate-Body Leakage IGSS "100 "100 nA
Zero Gate Voltage Drain Current IDSS 1 1 mA
On-State Drain Current VGS = 10 V ID(on) 20 20 A
Drain Source On Resistance
VGS = 10 V
rD( )
0.017 0.022 0.018 0.022
W
Drain-Source On-Resistance VGS = 4.5 V rDs(on) 0.024 0.030 0.024 0.030 W
Forward Transconductance gfs 19 22 S
Diode Forward Voltage VSD 0.75 1.2 0.8 1.2 V
Dynamic
Total Gate Charge Qg 7 11 13 20
Gate-Source Charge Qgs 2.9 2 nC
Gate-Drain Charge Qgd 2.5 2.7
Gate Resistance Rg0.5 1.5 2.6 NS W
Switching
Turn
-
On Time
td(on) 9 15 8 16
T
urn-
O
n
Ti
me tr10 17 10 20
Turn Off Time
td(off) 19 30 21 40 ns
Turn-Off Time tf9 15 10 20
Source-Drain Reverse Recovery Time trr 35 55 40 80
NS denotes parameter not specified in original data sheet.
