BFR182W Low Noise Silicon Bipolar RF Transistor * For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 * fT = 8 GHz, NFmin = 0.9 dB at 900 MHz * Pb-free (RoHS compliant) and halogen-free package with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR182W Marking RGs Pin Configuration 1=B 2=E Package SOT323 3=C Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 250 mW Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 V mA TS 90 C Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1T S is 2For Value Unit 240 K/W measured on the collector lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFR182W Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 12 - - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 4 V, VBE = 0 - 1 30 VCE = 15 V, VBE = 0 V, TA = 85 C - 5 70 ICBO - 1 30 IEBO - - 50 hFE 70 100 140 (verified by random sampling) Collector-base cutoff current VCB = 4 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 10 mA, VCE = 8 V, pulse measured 2 2014-04-07 BFR182W Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT 6 8 - Ccb - 0.34 0.5 Cce - 0.26 - Ceb - 0.8 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 3 mA, VCE = 8 V, ZS = ZSopt , - 0.9 - - 1.3 - Gms - 19 - dB Gma - 12.5 - dB f = 900 MHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz - 15.5 - IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz - 10 - 1G ms = |S21 / S12| 1/2 ma = |S21e / S12e | (k-(k-1) ) 2G 3 2014-04-07 BFR182W Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 300 mW RthJS Ptot K/W 200 10 2 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = (tp ) P totmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2014-04-07 Package SOT323 5 BFR182W 2014-04-07 BFR182W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2014-04-07