TRF2436IRTBR - Texas Instruments - Datasheet.Directory

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FEATURES

V+PA3B

DETB

DETN

RFANTB

V+LNABA

RFANTA

GND

BYPOUT

BYPIN

MXB

ABSEL

V+LOB

RSVD1

LOP

LON

IFP

IFN

MXA

V+LOA

TXGADJB

LOADJB

RXDGC

RFB

RSVD2

V+PA1B

PABCB

BCIN

V+PA2B

V+IF

V+IFP

V+IFN

RFA

V+PA1A

V+GEN

V+PA2A

PABCA

V+PA3A

BCOUT

383940 37 36 35 34 33 32 31

131211 14 15 16 17 18 19 20

TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

High-Power Dual-Band (2.4-GHz to 2.5-GHz and 4.9-GHz to 5.9-GHz) RF Front-End

•Integrated Temperature Compensated TXPower Detectors•Highly Integrated 802.16 d/e Radio FrequencyFront End ASIC •PA Bias Control Function•Fully Integrated Up/Down Converters, LNAs, •Antenna Port OP

1dB

= +23 dBm TypicalPAs and T/R Switches

•Antenna Port OIP3 = +33 dBm, Typical•Super Heterodyne Architecture for Superior

•Frequency Range: 2.4 to 2.5 andAdjacent Channel Rejection Performance

4.9 to 5.9 GHz•Differential LO and IF Interface for Enhanced

•Noise Figure: 4 dB ISM Band, 6 dB 5 GHzSpurious/EMI Performance

Bands Typical•Common Frequency Plan uses a Single LO

•Typical Gain: 38 dB TX, 20 dB RXand Common IF for Single IF Filter for Both

•IF = 374 MHzBands

TRF2436 PACKAGE

(TOP VIEW)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Copyright © 2005–2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

www.ti.com

DESCRIPTION

BPF

T/R

A/B

ABSEL

RXGC

RFANTA

RFANTB

DET

V+

T/R

V+

MXA

MXBRFB

RFA

PABCA

PABCB

DEVICE INFORMATION

TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

The TRF2436 is a fully integrated Dual Band Tri Mode Radio Frequency Front End (RFFE) designed specificallyfor use in 802.16 d/e applications. The TRF2436 is designed to perform RF up and down conversions in theunlicensed ISM and 4.9-5.9 GHz bands. The TRF2436 uses a common IF frequency for both bands, eliminatingthe need for additional IF filtering. Combined with the TI TRF2432 IF/IQ Transceiver/Synthesizer, the TRF2436completes the TI WLAN two-chip radio.

The TRF2436 incorporates all of the RF blocks for both the “b” and “a” bands except for low cost ceramic filters.The ASIC includes LNAs, PAs, mixers, bias circuitry, RX gain control, transmit coupler detectors, and T/Rswitches. High integration and internal RF matching enhances performance and greatly reduce external partcount. The only external components needed (other than simple passives) for operation are RF filters andexternal low power DC switching FETs.

Functional Block Diagram

TERMINAL FUNCTIONS

TERMINAL

I/O TYPE DESCRIPTIONNAME NO.

MXB 1 I/O RF SE B band RF Input/Output to mixer. 50- Ωsingle ended. Do not apply DC.ABSEL 2 I Digital Band select pin. HIGH = A-band. LOW = B-band.V+LOB 3 I Power B band LO amplifier bias +3.3VRSVD1 4 - - Not connected for normal operation. Leave Open.LOP 5 I RF Dif. LO input (differential) Positive, AC coupled

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TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

DEVICE INFORMATION (continued)TERMINAL FUNCTIONS (continued)

TERMINAL

I/O TYPE DESCRIPTIONNAME NO.

LON 6 I RF Dif. LO input (differential) Negative, AC coupledIFP 7 I/O RF Dif. IF input/output (differential) Positive, DC coupled, typical DC Voltage is 2.6VIFN 8 I/O RF Dif. IF input/output(differential) Negative, DC coupled, typical DC Voltage is 2.6VMXA 9 I/O RF SE A band RF Input/Output to mixer. 50- Ωsingle ended. Do not apply DC.V+LOA 10 I Power A band LO amplifier bias +3.3VV+IF 11 I Power IF amplifier bias +3.3V.V+IFP 12 I Power IFP amplifier bias +3.3V.V+IFN 13 I Power IFN amplifier bias +3.3V.RFA 14 I/O RF SE A Band RF Input/Output to PA/LNA. 50- Ωsingle ended. AC coupled.V+PA1A 15 I Power A band Power amplifier bias +3.3V.V+GEN 16 I Power DC Bias Control Bias +3.3V.V+PA2A 17 I Power A band Power amplifier bias +3.3V.PABCA 18 - - A band PA Bias Control InputV+PA3A 19 - - A band Power amplifier bias +3.3V.BCOUT 20 O Analog Bias Control Output.BYPIN 21 I Analog DC Bias Bypass InputBYPOUT 22 O Analog DC Bias Bypass OutputGND 23, 24 - - Connect to groundRFANTA 25 I/O RF SE A band RF in/out to antennas. AC coupled.V+LNABA 26 I Power A and B Band LNA bias +3.3V.RFANTB 27 I/O RF SE B band RF in/out to antennas. AC coupled.DETN 28 O Analog Negative RF power detector outputDETP 29 O Analog Positive RF power detector output.V+PA3B 30 I Power B band Power amplifier bias +3.3V.V+PA2B 31 I Power B band Power amplifier bias +3.3V.BCIN 32 I Analog Bias control inputPABCB 33 - - B band PA Bias Control InputV+PA1B 34 I Power B band Power amplifier bias +3.3V.RSVD2 35 - - Not Connected for normal operation. Leave Open.RFB 36 I/O RF SE B band RF Input/Output to PA/LNA. 50- Ωsingle ended. AC coupled.RXDGC 37 I Digital Rx Gain Control. HIGH = minimum gain. LOW = maximum gainTR 38 I Digital Transmit/Receive mode control. HIGH = transmit. LOW = receive.LOADJB 39 - - Not connected for normal operation. Leave Open. B band LO amp bias adjust.TXGADJB 40 - - Not connected for normal operation. Leave open. PAB Amplifier bias adjust.

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ABSOLUTE MAXIMUM RATINGS

DC CHARACTERISTICS

RECEIVER CHARACTERISTICS

TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

over operating free-air temperature range (unless otherwise noted)

VALUE UNIT

DC supply voltage 0 to 6.9 VI

DC supply current 600 mARF input power Any port and any mode 10 dBmV

Digital input voltage -0.3 to 5 VT

Junction temperature 175 °Cθ

Thermal resistance junction-to-case 35 °C/WT

Operating temperature -20 to 85 °CT

stg

Storage temperature -40 to 105 °CLead temperature 40 sec maximum 220 °C

TYP ratings are at 25 °C and V

= 3.3 V, MIN and MAX ratings are over operating free-air temperature and voltage ranges(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Supply voltage Specification compliant 2.7 3.3 4.2 VB Band, RX Mode 65 105 mAA Band, RX Mode 80 120 mAI

Total supply current

B Band, TX Mode, Max PABC input 410 520 mAA Band, TX Mode, Max PABC input 450 550 mAV

High-level input voltage 1.7 VV

Low-level input voltage 0.5 VI

High-level input current 100 300 µAI

Low-level input current -50 µA

TR = Low, 2 dB base band filter loss in RX band, MIN, TYP, and MAX rating are at 25 °C and V

= 3.3 V (unless otherwisenoted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

B band 2400 2500f

IRF

RF input frequency MHzA band 4900 5900B band 2774 2874f

LO input frequency MHzA band 2637 3137f

IF input frequency 374 MHzB Band High Gain Mode

17 19RXGC=LOWG Gain dBA Band High Gain Mode

18 23RXGC=LOW

B Band Low Gain Mode

25RXGC=HIGH∆G Gain step size dBA Band Low Gain Mode

15RXGC=HIGH

B Band. Max Gain 4 5Noise figure dBA Band. Max Gain 6 7.5

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TRANSMITTER CHARACTERISTICS

TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

RECEIVER CHARACTERISTICS (continued)TR = Low, 2 dB base band filter loss in RX band, MIN, TYP, and MAX rating are at 25 °C and V

= 3.3 V (unless otherwisenoted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

B Band High Gain Mode

-16 -13RXGC=LOW

B Band Low Gain ModeRXGC=HIGHInput P

-1dB

dBmA Band High Gain Mode

-22 -18RXGC=LOW

A Band Low Gain Mode

-16 -13RXGC=HIGH

B Band High Gain Mode

-6 -2RXGC=LOW

B Band Low Gain Mode

4 8RXGC=HIGHInput 3rd order intercept point dBmA Band High Gain Mode

-12 -8RXGC=LOW

A Band Low Gain Mode

-6 -3RXGC=HIGH

Z = 50 ΩBoth Bands, Both GainRF input return loss 8 dBmodes

Z = 50 ΩBoth Bands, Both GainLNA out return loss RF 9 dBmodesMixer input MX return loss Z = 50 ΩBoth Bands 10 dBOutput return loss Measured into 200 Ωdifferential 10 dBB band -30LO at MX leakage dBmA Band (5274-6274 MHz) -30LO at IF leakage Both bands -40 dBmB band 1Gain flatness full band dBA band 2Gain flatness / 22 MHz Both bands dBFull range to within 0.5 dB final. AllGain settling time 0.3 µsbands

In Band: B Band High Gain Mode

30RXGC=LOW

In Band: B Band Low Gain Mode

5RXGC=HIGHRF to RFANT isolation dBIn Band: A Band High Gain Mode

25RXGC=LOW

In Band: A Band Low Gain Mode

35RXGC=HIGH

TR = High, 2 dB base band filter loss in RX band, MIN, TYP, and MAX rating are at 25 °C and V

= 3.3 V (unless otherwisenoted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IF input frequency 374 MHzB band 2400 2500 MHzf

ORF

RF output frequency

A band 4900 5900 MHzB band 2774 2874 MHzf

LO input frequency

A band 2637 3137 MHzB Band 37 40 dBG Gain

A Band 40 43 dB

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COMMON ELECTRICAL CHARACTERISTICS

TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

TRANSMITTER CHARACTERISTICS (continued)TR = High, 2 dB base band filter loss in RX band, MIN, TYP, and MAX rating are at 25 °C and V

= 3.3 V (unless otherwisenoted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

B band. max PABC input 22 23.5 dBmA band. max PABC input 20.5 22.5 dBmOutput 1 dB gain compression

5150 – 5350 MHz Max PABC input,V+PA = 2.9 V min, 20.5 22.5 dBmOther V

= 2.7 V minB band 32 35 dBmOutput 3rd order intercept

A band 30 32.5 dBmNoise figure Both bands 8 dBIF input return loss Measured into 200 Ωdifferential 8 dBMixer output return loss MX Z = 50 Ωboth bands 10 dBRF input return loss RF Z = 50 Ωboth bands 8 dBRFANT return loss Z = 50 Ωboth bands 6 dBB band -35 dBml

lkg

LO leakage at MX

A band (5274-6274 MHz) -35 dBmB band 1 dBGain flatness full band

A band 2 dBGain flatness / 22 MHz Both bands dBPA harmonics Both bands CW at P1 dB -20 dBcB band 50 dBRFANT to RF isolation

A band 50 dBPA Off Isolation RF to RFANT In band: both bands 50 dBPA Turn On Time To within 0.5 dB max power 0.2 µsPA Turn Off Time To within -20 dB max power 0.2 µsFrom max power after turn-on time,PA droop 0.5 dBMaximum on duration is 200 msPA Bias Control Input Range Max Current corresponds to max PA

mA(PABC) bias state

MIN, TYP, and MAX ratings are at 25 °C and V

= 3.3 V (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Gain within 0.5dB. Not Including PATR_SEL switch time 0.3 1 µsramp timeAB_SEL switch time 1 µsLO input power Reference to 100 Ωdifferential -1 5 dBmMeasured to 100 Ωdifferential atLO input return loss 625 °CIF port impedance Differential 200 ΩLO port impedance 100 Ω

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TYPICAL CHARACTERISTICS

A Band Detector Output

0.1

100

1000

0 5 10 15 20 25

Pout(dBm)

VDETP−VDETN (mV)

25C

−25C

85C

B Band Detector Output

0.1

100

1000

−10−5 0 5 10152025

Pout(dBm)

VDETP−VDETN (mV)

25C

−25C

85C

TRF2436

SLWS176C – APRIL 2005 – REVISED MAY 2007

Figure 1. A Band Detector Output

Figure 2. B Band Detector Output

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PACKAGING INFORMATION

Orderable Device Status (1) Package

Type Package

Drawing Pins Package

Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

TRF2436IRTBR ACTIVE VQFN RTB 40 2500 Green (RoHS &

no Sb/Br) CU SN Level-3-260C-168 HR

TRF2436IRTBRG4 ACTIVE VQFN RTB 40 2500 Green (RoHS &

no Sb/Br) CU SN Level-3-260C-168 HR

TRF2436IRTBT ACTIVE VQFN RTB 40 250 Green (RoHS &

no Sb/Br) CU SN Level-3-260C-168 HR

TRF2436IRTBTG4 ACTIVE VQFN RTB 40 250 Green (RoHS &

no Sb/Br) CU SN Level-3-260C-168 HR

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and

package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS

compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame

retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the

accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take

reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on

incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited

information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI

to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 8-Dec-2009

Addendum-Page 1

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

TRF2436IRTBR VQFN RTB 40 2500 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q2

TRF2436IRTBT VQFN RTB 40 250 330.0 16.4 6.3 6.3 1.5 12.0 16.0 Q2

PACKAGE MATERIALS INFORMATION

www.ti.com 16-Feb-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TRF2436IRTBR VQFN RTB 40 2500 336.6 336.6 28.6

TRF2436IRTBT VQFN RTB 40 250 336.6 336.6 28.6

PACKAGE MATERIALS INFORMATION

www.ti.com 16-Feb-2012

Pack Materials-Page 2

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