2011-07-251
BFN38
1
2
3
4
NPN Silicon High-Voltage Transistors
• Suitable for video output stages TV sets
and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BFN39 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 6
Collector current IC200 mA
Peak collector current, tp ≤ 10 ms ICM 500
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 124 °C
Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 17 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-07-252
BFN38
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 250 V, IE = 0
VCB = 250 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
30
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 20 MHz, VCE = 10 V, f = 20 MHz
fT- 70 - MHz
Collector-base capacitance
VCB = 30 V, f = 1 MHz
Ccb - 1.5 - pF
1Pulse test: t < 300µs; D < 2%
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BFN38
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00639BFN 36/38
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
Collector current IC = ƒ(VBE)
VCE = 10V
EHP00636BFN 36/38
10
0V
BE
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
Collector cutoff current ICBO = ƒ(TA)
VCB = 30 V
EHP00638BFN 36/38
10
0˚C
A
150
CB0
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
nA
max
typ
5
10
3
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
EHP00637BFN 36/38
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
10
1
5
2011-07-254
BFN38
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
10
20
30
40
50
60
70
pF
90
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.3
0.6
0.9
1.2
W
1.8
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00245BFN 36/38
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
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BFN38
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-07-256
BFN38
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
