HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 60 A IC90 TC = 90C ICM TC = 25C, 1 ms SSOA (RBSOA) VGE= 15 V, TVJ = 125C, RG = 22 Clamped inductive load PC TC = 25C 32 A 120 A ICM = 64 @ 0.8 VCES A 200 W TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G G = Gate, E = Emitter, C C (TAB) E C = Collector, TAB = Collector -55 ... +150 C TJM 150 C Features * International standard packages Tstg -55 ... +150 C * High frequency IGBT and antiparallel TJ Md Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 300 C 6 4 g g FRED in one package * High current handling capability * HiPerFASTTM HDMOSTM process * MOS Gate turn-on -drive simplicity Applications * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies Symbol Test Conditions BVCES IC = 250 A, VGE = 0 V 600 VGE(th) IC = 250 A, VCE = VGE 2.5 5.0 V ICES VCE = 0.8 * VCES VGE = 0 V 32N60B 32N60BD1 200 1 3 A mA mA 100 nA IGES VCE(sat) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 150C VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2003 IXYS All rights reserved V 2.3 V * AC motor speed control * DC servo and robot drives * DC choppers Advantages * Space savings (two devices in one package) * High power density * Suitable for surface mounting * Very low switching losses for high frequency applications * Easy to mount with 1 screw,TO-247 (insulated mounting screw hole) DS98749C(02/03) IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B IXGT 32N60BD1 TO-247 AD (IXGH) Outline Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 15 25 S 2700 pF 210 240 pF pF Cres 50 pF QG 110 150 nC 23 35 nC 40 75 nC Cies VCE = 25 V, VGE = 0 V, f = 1 MHz Coes QGE IC 32N60B 32N60BD1 = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) tri td(off) Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 0.640 0.144 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 80 150 ns 1.2 mJ ns tri IC 25 ns Eon VCE = 0.8 VCES, RG = Roff = 4.7 mJ mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 0.3 1.0 120 ns 120 ns 1.2 mJ RthJC TO-268AA (D3 PAK) 0.62 K/W TO-247 Reverse Diode (FRED) IRM trr 0.610 0.140 4.32 5.4 25 VF 15.75 16.26 3.55 3.65 E F Inductive load, TJ = 125C Symbol 0.800 0.845 ns td(on) RthCK 0.780 0.819 C D 0.6 Eoff 19.81 20.32 20.80 21.46 ns Eoff tfi A B ns 200 32N60B 32N60BD1 Inches Min. Max. 20 100 = IC90, VGE = 15 V Millimeter Min. Max. 25 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG tfi Dim. Test Conditions 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IF = IC90, VGE = 0 V, TJ = 150C Pulse test, t 300 s, duty cycle d 2 % TJ = 25C IF = IC90, VGE = 0 V, -diF/dt = 100 A/s VR = 360 V IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 125C TJ = 25C 1.6 2.5 6 100 25 RthJC V V A ns ns 1.0 K/W Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B IXGT 32N60BD1 100 200 TJ = 25C TJ = 25C VGE = 15V 13V 11V 9V 7V 60 13V 11V 160 IC - Amperes IC - Amperes 80 VGE = 15V 40 20 9V 120 80 7V 40 5V 0 5V 0 0 1 2 3 4 5 6 7 0 2 4 8 10 VCE - Volts VCE - Volts Fig. 2. Extended Output Characteristics Fig. 1. Saturation Voltage Characteristics 1.75 100 TJ = 125C VGE = 15V VCE (sat) - Normalized 80 IC - Amperes 6 60 40 20 IC = 64A 1.50 1.25 IC = 32A 1.00 IC = 16A 0 0 1 2 3 4 5 6 0.75 25 7 50 75 VCE - Volts 150 Fig. 4. Temperature Dependence of VCE(sat) 1.15 100 VCE = 10V BV/VGE(th) - Normalized 60 40 TJ = 125C 20 4 5 6 7 8 9 0.95 0.90 0.85 BVCES IC = 250A 0.80 0 25 50 75 100 125 150 TJ - Degrees C Fig. 6. Temperature Dependence of BVDSS & VGE(th) G32N60B P1 (c) 2003 IXYS All rights reserved 1.00 0.70 -50 -25 10 VGE - Volts Fig. 5. Admittance Curves 1.05 0.75 TJ = 25C 3 VGE(th) IC = 250A 1.10 80 IC - Amperes 125 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics 0 100 IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B IXGT 32N60BD1 2.5 5 2.5 TJ = 125C 1.5 3 E(OFF) 40 60 3 E(OFF) 1 0.5 1 0 80 0.0 0.5 20 E(ON) 1.5 2 2 0 0 10 30 40 0 60 50 Fig. 8. Dependence of tfi and EOFF on RG. 100 IC = 32A VCE = 300V IC - Amperes 12 VGE - Volts 20 RG - Ohms IC - Amperes Fig. 7. Dependence of tfi and EOFF on IC. 15 4 1.0 1.0 0.0 E(ON) - millijoules E(ON) IC = 32A 2.0 E(OFF) - millijoules E(ON) - millijoules 4 RG = 10 E(OFF) - milliJoules 2.0 5 TJ = 125C 9 6 TJ = 125C 10 RG = 4.7 dV/dt < 5V/ns 1 3 0 0.1 0 25 50 75 100 125 150 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B IXGT 32N60BD1 60 A 50 IF 30 1000 T = 100C VJ nC VR = 300V 40 TVJ=150C 30 25 IF= 60A IF= 30A IF= 15A 800 Qr TVJ= 100C VR = 300V A IF= 60A IF= 30A IF= 15A IRM 20 600 15 TVJ=100C 400 20 10 TVJ=25C 200 10 0 0 1 2 5 0 100 3 V 0 A/s 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 90 1.0 IRM 1.00 s VFR tfr 0.75 tfr 80 IF= 60A IF= 30A IF= 15A 600 A/s 800 1000 -diF/dt 400 Fig. 14 Peak reverse current IRM versus -diF/dt VFR 15 trr Kf 200 20 TVJ= 100C IF = 30A V TVJ= 100C VR = 300V ns 1.5 0 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 C 160 0 0 200 TVJ 400 600 800 1000 A/s 0 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/s 800 1000 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC 0.01 0.001 0.00001 200 DSEP 29-06 0.0001 0.001 0.01 s 0.1 t Fig. 18 Transient thermal resistance junction to case (c) 2003 IXYS All rights reserved 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162