© 2003 IXYS All rights reserved
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C60A
IC90 TC= 90°C32A
ICM TC= 25°C, 1 ms 1 2 0 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 22 Ω ICM = 64 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M3) TO-247AD 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247AD 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 6 0 0 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 µA
VGE = 0 V TJ = 150°C 32N60B 1 mA
32N60BD1 3 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.3 V
HiPerFASTTM IGBT VCES = 600 V
IC25 = 60 A
VCE(sat) = 2.3 V
tfi(typ) = 85 ns
DS98749C(02/03)
C
(TAB)
GCE
TO-247 AD
(IXGH)
TO-268
(IXGT) GE
C
(TAB)
Features
•International standard packages
•High frequency IGBT and antiparallel
FRED in one package
•High current handling capability
•HiPerFASTTM HDMOSTM process
•MOS Gate turn-on
-drive simplicity
Applications
•Uninterruptible power supplies (UPS)
•Switched-mode and resonant-mode
power supplies
•AC motor speed control
•DC servo and robot drives
•DC choppers
Advantages
•Space savings (two devices in one
package)
•High power density
•Suitable for surface mounting
•Very low switching losses for high
frequency applications
•Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
IXGH 32N60B
IXGT 32N60B
IXGH 32N60BD1
IXGT 32N60BD1
(D1)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC90; VCE = 10 V, 15 25 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 2700 pF
Coes VCE = 25 V, VGE = 0 V , f = 1 MH z 32N60B 210 p F
32N60BD1 240 pF
Cres 50 pF
QG110 150 nC
QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 35 nC
QGC 40 75 nC
td(on) 25 ns
tri 20 ns
td(off) 100 200 ns
tfi 80 150 ns
Eoff 0.6 1.2 mJ
td(on) 25 ns
tri 25 ns
Eon 32N60B 0.3 mJ
32N60BD1 1.0 mJ
td(off) 120 ns
tfi 120 ns
Eoff 1.2 mJ
RthJC 0.62 K/W
RthCK TO-247 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, TJ = 150°C 1.6 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C 2.5 V
IRM IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs6A
trr VR = 360 V TJ = 125°C 100 ns
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C25 ns
RthJC 1.0 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B IXGT 32N60BD1
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
© 2003 IXYS All rights reserved
TJ - D e grees C
-50 -25 0 25 50 75 100 125 150
BV/VGE(th) - Normaliz e d
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
TJ - Degrees C
25 50 75 100 125 150
VCE (sat) - Normalized
0.75
1.00
1.25
1.50
1.75
VCE - Vo lts
01234567
IC - Amperes
0
20
40
60
80
100
VGE - Volt s
345678910
IC - Amperes
0
20
40
60
80
100
VCE - Volts
0246810
IC - Amperes
0
40
80
120
160
200 13V 11V
9V
7V
VCE = 10V
VGE = 15V
13V
11V
9V
7V
TJ = 25°C VGE = 15V
TJ = 25°C
IC = 16A
IC = 32A
IC = 64A
TJ = 125°C
VGE(th)
IC = 2 50µA
BVCES
IC = 250µA
G32N60B P1
5V 5V
VGE = 15V
TJ = 25°C
VCE - Volts
01234567
IC - Amperes
0
20
40
60
80
100
TJ = 125°C
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
Fig. 5. Admittance Curves
Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat)
Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B IXGT 32N60BD1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Fig. 11. Transient Thermal Resistance
Pulse W idth - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
ZthJC (K/W)
0.001
0.01
0.1
1
D=0.2
VCE - V o lts
0 100 200 300 400 500 600
IC - Amperes
0.1
1
10
100
Qg - nanocoulombs
0 25 50 75 100 125 150
VGE - Volts
0
3
6
9
12
15
RG - O h ms
0 102030405060
E(OFF) - millijoules
0
1
2
3
4
5
E(ON) - millijoules
0.0
0.5
1.0
1.5
2.0
2.5 TJ = 125°C
IC - Amperes
0 20406080
E(OFF) - milliJoules
0
1
2
3
4
5
E(ON) - millijoules
0.0
0.5
1.0
1.5
2.0
2.5
VCE = 30 0V
IC = 32A
IC = 32A
E(ON)
E(OFF)
E(ON)
E(OFF)
TJ = 125°C
RG = 4.7Ω
dV/dt < 5V /ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
RG = 10Ω
TJ = 12 5°C
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
Fig. 8. Dependence of tfi and EOFF on RG.
Fig. 7. Dependence of tfi and EOFF on IC.
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B IXGT 32N60BD1
© 2003 IXYS All rights reserved
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B IXGT 32N60BD1
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C -diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
VFR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns tfr
ZthJC
A/µs
µs
DSEP 29-06
IF= 60A
IF= 30A
IF= 15A
TVJ= 100°C
VR = 300V TVJ= 100°C
IF = 30A
Fig. 14 Peak reverse current IRM
versus -diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 12 Forward current IF versus VF
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
Qr
IRM
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and
tfr versus diF/dt
IF= 60A
IF= 30A
IF= 15A
tfr
VFR
Fig. 18 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.502 0.0052
2 0.193 0.0003
3 0.205 0.0162
TVJ=25°C
TVJ=100°C
TVJ=150°C
