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BAT74S
Dual Schottky barrier diode
22 November 2012 Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
Planar Schottky barrier dual diode with an integrated guard ring for stress protection.
Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
•Low forward voltage
•Low capacitance
•AEC-Q101 qualified
1.3 Applications
•Ultra high-speed switching
•Line termination
•Voltage clamping
•Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IFforward current - - 200 mA
VRreverse voltage - - 30 V
Per diode
VFforward voltage IF = 100 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 800 mV
IRreverse current VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 2 µA
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 2 / 10
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode (diode 1)
2 n.c. not connected
3 K2 cathode (diode 2)
4 A2 anode (diode 2)
5 n.c. not connected
6 K1 cathode (diode 1)
1 32
456
TSSOP6 (SOT363)
aaa-005709
K2
A2
A1
K1
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAT74S TSSOP6 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code
[1]
BAT74S 74%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRreverse voltage - 30 V
IFforward current - 200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peak forward
current
tp < 10 ms; Tj(init) = 25 °C - 600 mA
Ptot total power dissipation Tamb ≤ 25 °C - 240 mW
Tjjunction temperature - 125 °C
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 3 / 10
Symbol Parameter Conditions Min Max Unit
Tamb ambient temperature -55 125 °C
Tstg storage temperature -65 150 °C
Per device
series connection - 60 VVRreverse voltage
- 30 V
IFforward current [1] - 110 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 200 mA
[1] If both diodes are in forward operation at the same moment, total device current is maximum 110 mA.
If one diode is in reverse and the other in forward operation at the same moment, total device current is
maximum 200 mA.
mbl889
0
100
200
300
Ptot
(mW)
150750 Tamb (°C)
Fig. 1. Power derating curve
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - - 416 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 4 / 10
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IF = 0.1 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 240 mV
IF = 1 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 320 mV
IF = 10 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 400 mV
IF = 30 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 500 mV
VFforward voltage
IF = 100 mA; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 800 mV
IRreverse current VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
- - 2 µA
Cddiode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - - 10 pF
trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
- - 5 ns
006aac829
VF (V)
0.0 1.20.80.4
1
10
102
103
IF
(mA)
10-1
(1)
(1)
(2)
(2) (3)
(3)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 2. Forward current as a function of forward
voltage; typical values
aaa-004515
VR (V)
0 302010
1
10
102
103
IR
(µA)
10-1
(1)
(2)
(3)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 3. Reverse current as a function of reverse
voltage; typical values
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 5 / 10
006aac891
VR (V)
0 302010
4
6
2
8
10
Cd
(pF)
0
Tamb = 25 °C; f = 1 MHz
Fig. 4. Diode capacitance as a function of reverse voltage; typical values
8. Test information
trr
(1)
+ IF
t
output signal
trtp
t
10 %
90 %
VR
input signal
V = VR+ IF× RS
RS= 50 ΩIF
D.U.T.
Ri= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
(1) IR = 1 mA
Fig. 5. Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 6 / 10
9. Package outline
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
1 32
46 5
Fig. 6. Package outline TSSOP6 (SOT363)
10. Soldering
Fig. 7. Reflow soldering footprint for TSSOP6 (SOT363)
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 7 / 10
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
Fig. 8. Wave soldering footprint for TSSOP6 (SOT363)
11. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
BAT74S v.5 20121122 Product data sheet - BAT74S v.4
Modifications: •The format of this document has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Section 1 Product profile: updated
•Section 4 Marking: updated
•Table 5 Limiting values: changed Tamb minimum value to -55 °C according to AEC-Q101
•Figure 2 and 3: updated
•Section 8 Test information: added
•Figure 6: superseded by minimized package outline drawing
•Section 10 Soldering: added
•Section 11 Legal information: updated
BAT74S v.4 20030411 Product specification - BAT74S v.3
BAT74S v.3 19980710 Product specification - BAT74S v.2
BAT74S v.2 19980206 Product specification - BAT74S v.1
BAT74S v.1 19971107 Product specification - -
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 8 / 10
12. Legal information
12.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 9 / 10
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 10 / 10
13. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information ............................................. 2
4 Marking ................................................................... 2
5 Limiting values .......................................................2
6 Thermal characteristics .........................................3
7 Characteristics .......................................................4
8 Test information ..................................................... 5
8.1 Quality information .........................................
9 Package outline ..................................................... 6
10 Soldering ................................................................ 6
11 Revision history ..................................................... 7
12 Legal information ...................................................8
12.1 Data sheet status ................................................. 8
12.2 Definitions .............................................................8
12.3 Disclaimers ...........................................................8
12.4 Trademarks .......................................................... 9
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 November 2012