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IXYS reserves the right to change limits, test conditions and dimensions.
VBO 160
20100706b
IdAV = 174 A
VRRM = 800-1800 V
Symbol Conditions Maximum Ratings
IdAV TC = 100°C, module 174 A
IdAV TA = 35°C (RthCA = 0.2 K/W), module 139 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 2800 A
VR = 0 t = 8.3 ms (60 Hz), sine 3300 A
TVJ = TVJM t = 10 ms (50 Hz), sine 2500 A
VR = 0 t = 8.3 ms (60 Hz), sine 2750 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 39 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 45 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 31 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 31 300 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL < 1 mA t = 1 s 3000 V~
MdMounting torque (M6) 5 ±15% Nm
Terminal connection torque (M6) 5 ±15% Nm
Weight typ. 270 g Dimensions in mm (1 mm = 0.0394")
Features
•Package with screw terminals
•Isolation voltage 3000 V~
•Planar passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
• UL registered E 72873
Applications
•Supplies for DC power equipment
•Input rectifiers for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling
VRSM VRRM Type
VV
900 800 VBO 160-08NO7
1300 1200 VBO 160-12NO7
1700 1600 VBO 160-16NO7
1900 1800 VBO 160-18NO7
Data according to IEC 60747 refer to a single diode unless otherwise stated.
Symbol Test Conditions Characteristic Values
IRVR = VRRM TVJ = 25°C < 0.3 mA
VR = VRRM TVJ = TVJM <5mA
VFIF = 300 A TVJ = 25°C < 1.43 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 2.2 mΩ
RthJC per diode, 180° 0.45 K/W
per module 0.11 K/W
RthJK per diode, 180° 0.6 K/W
per module 0.15 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Single Phase
Rectifier Bridge
+
–
~
~
M
6
x
1
2
7
330
27
6.5
6.5
C~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
7
M6
~
~
+-
Preliminary data
