FMS7G15US60S Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Features * * * * * * * Short Circuit Rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 15A High Input Impedance Built-in Brake & 1 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD Built-in NTC Thermistor Package Code : 25PM-AA 4 5 21 Application * * * * 23 25 20 16 18 14 13 24 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls 17 19 8 1 10 9 3 6 2 15 7 11 NTC 12 Internal Circuit Diagram Absolute Maximum Ratings Inverter & Brake Converter Common Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 80C Pulsed Collector Current Diode Continuous Forward Current @ TC = 80C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C Short Circuit Withstand Time @ TC = 100C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive FMS7G15US60S 600 20 15 30 15 30 73 10 1600 20 Units V V A A A A W us V A 200 A 164 A2s I2t TJ Operating Junction Temperature -40 to +150 C TSTG Storage Temperature Range -40 to +125 C VISO Isolation Voltage Mounting part Screw 2500 2.0 V N.m Mounting Torque Energy pulse @ 1Cycle at 60Hz @ AC 1minute @ M4 Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ FMS7G15US60S IGBT C Symbol Parameter Test Conditions = 25C unless otherwise noted Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 100 uA nA IC = 15mA, VCE = VGE IC = 15A, VGE = 15V 5.0 -- 6.5 2.1 8.5 2.7 V V ---- 935 81 18 ---- pF pF pF ------------- 65 80 80 100 0.3 0.3 70 80 90 210 0.33 0.5 130 160 160 200 --140 160 180 350 --- ns ns ns ns mJ mJ ns ns ns ns mJ mJ VCC = 300 V, VGE = 15V 100C 10 -- -- us VCE = 300 V, IC = 15A, VGE = 15V ---- 45 9 17 60 15 30 nC nC nC Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 125C @ TC = (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ FMS7G15US60S Electrical Characteristics of IGBT @ Inverter & Brake T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge IF = 15A di / dt = 30 A/us VFM Diode Forward Voltage IRRM Repetitive Reverse Current Max. 2.8 -- 2.0 -- -- 75 150 -- 100 -- TC = 25C -- 1.0 2.0 TC = 100C -- 1.3 -- TC = 25C -- 40 150 TC = 100C -- 65 -- Units V ns A nC = 25C unless otherwise noted Test Conditions TC = 25C IF = 20A TC = 100C VR = VRRM Typ. 1.9 TC = 100C C Parameter Min. -- TC = 25C Electrical Characteristics of DIODE @ Converter T Symbol = 25C unless otherwise noted Test Conditions TC = 25C IF = 15A TC = 100C Min. -- Typ. 1.1 Max. 1.5 -- 1.0 -- TC = 25C -- -- 8 TC = 100C -- 5 -- Units V mA Thermal Characteristics Inverter Brake Converter Weight Symbol RJC RJC RJC RJC RJC Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Weight of Module Parameter (IGBT Part, per 1/6 Module) (DIODE Part, per 1/6 Module) (IGBT Part) (DIODE Part) (DIODE Part, per 1/6 Module) Typ. -----60 Max. 1.7 2.5 1.7 2.5 1.5 -- Units C/W C/W C/W C/W C/W g NTC Thermistor Characteristics Thermistor Symbol R25 R100 B(25/100) Parameter Rated Resistance @ Tc = 25C Rated Resistance @ Tc = 100 C B - Value (c)2003 Fairchild Semiconductor Corporation Tol. +/- 5 % +/- 5 % +/- 3 % Typ. 4.7 0.39 3688 Units K K FMS7G15US60S Rev. A http://store.iiic.cc/ FMS7G15US60S Electrical Characteristics of DIODE @ Inverter & Brake T Common Emitter VGE = 15 V TC = 25 TC = 125 ------ V 2 1 o TC = 25 C 0 4 0 5 0 4 0 2 V 0 1 = V E G 0 2 0 1 0 1 ] A [ IC , t n e r r u C r o t c e l l o C 0 3 0 3 ] A [ IC , t n e r r u C r o t c e l l o C FMS7G15US60S 0 5 V 5 1 V 0 2 0 6 Common Emitter 0 0 ] 0 V 1 [ V , e g a t l o V r e t t i m E r 1 o t c e l l o C 8 ] V [ 6 V , e g a t l o V r 4 e t t i m E r o t 2 c e l l o C 0 E C E C Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 0 . 4 A 0 3 5 . 3 T B G I 5 . 2 A 5 1 0 . 2 0.1 A 8 = IC 5 . 1 0 5 1 0 0 1 0 5 -5 -4 10 ] C o [ C T , e r u t a r e p m e T e s C 0 a 0 5 0. 1 Single Pulse (Thermal Response) 10 10 -3 -2 10 10 -1 0 1 10 10 Rectangular Pulse Duration [sec] Fig 4. Transient Thermal Impedance 0 2 0 2 ] V [ Common Emitter TC = 125 2 1 2 1 8 V , e g a t l o V r e t t i m E r o t c e l l o C ) t a s ( E C 6 1 6 1 Common Emitter TC = 25 8 4 4 A 0 3 A 7 = IC 0 2 ] 6 V 1 [ V , e 2 g 1 a t l o V r e t t 8 i m E e G t 4 a 0 2 ] 6 V 1 [ V , e 2 g 1 a t l o V r e t t 8 i m E e G t 4 a 0 E G E G Fig 5. Saturation Voltage vs. VGE A 5 1 0 A 0 3 A 5 1 A 7 = IC 0 0 V , e g a t l o V r e t t i m E r o t c e l l o C ) t a s ( E C 1 0.01 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level ] V [ D R F 0 . 3 V , e g a t l o V r e t t i m E r o t c e l l o C ) t a s ( E C Common Emitter VGE = 15V Thermal Response, Zthjc [/W] 10 ] V [ Fig 6. Saturation Voltage vs. VGE (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ s e i C 0 0 1 2 o TC = 25 C 0 0 8 1 n o T 0 0 2 1 s e r C 0 0 9 r T 0 0 6 0 0 1 ] s n [ e m i T g n i h c t i w S s e o C 0 0 5 1 FMS7G15US60S 0 0 0 1 0 0 4 2 ] F p [ e c n a t i c a p a C Common Emitter VCC = 300V, VGE = 15V IC = 15A TC = 25 TC = 125 ------ Common Emitter VGE = 0 V, f = 1 MHz 0 0 3 0 0 0 1 0 8 ] [ G R , 0 e 6 c n a t s i s e t a G E C Fig 7. Capacitance Characteristics 0 0 0 1 Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, VGE = 15V IC = 15A TC = 25 TC = 125 ------ f f o E n o E f f o E f T ] J u [ s s o L g n i h c t i w S Common Emitter VCC = 300V, VGE = 15V IC = 15A TC = 25 TC = 125 ------ 0 0 0 1 f f o T ] s n [ e m i T g n i h c t i w S 0 R 4 e 0 2 ] V [ 0 1V , e g a t l o V r e t t i m 1E r o t c e l l o C 1 . 0 f T 0 0 1 0 0 1 0 0 1 0 8 0 6 0 4 0 2 0 0 1 0 8 0 6 0 4 0 2 ] [ G R , e c n a t s i s e R e t a G ] [ G R , e c n a t s i s e R e t a G Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 0 0 0 1 Common Emitter VGE = 15V, RG = 13 TC = 25 TC = 125 ------ 0 0 0 1 r T ff f f f oT o T T ] s n [ e m i T g n i h c t i w S n o T 0 0 1 ] s n [ e m i T g n i h c t i w S Common Emitter VGE = 15V, RG = 13 TC = 25 TC = 125 ------ f T 0 0 1 0 3 5 2 0 2 5 1 0 1 5 0 3 5 2 0 2 5 1 ] A [ c I , t n e r r u C r o t c e l l o C ] A [ c I , t n e r r u C r o t c e l l o 0 C 1 5 Fig 11. Turn-On Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ V 0 0 1 = V C C V 0 0 3 o TC = 25 C E G V 0 0 2 9 6 V , e g a t l o V r e t t i m E e t a G Common Emitter RL = 20 2 1 ] V [ 0 0 0 1 ] J u [ s s o L g n i h c t i w S FMS7G15US60S 5 1 0 0 0 0 1 Common Emitter VGE = 15V, RG = 13 TC = 25 TC = 125 ------ 3 f f o E 0 n o E f f o E 0 0 1 0 5 0 4 0 3 0 2 0 1 0 0 3 5 2 0 2 5 1 ] C n [ g Q , e g r a h C e t a G ] A [ c I , t n e r r u C r o t c e l l o 0 C 1 5 Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 0 0 1 50 IC MAX. (Pulsed) 50 us IC MAX. (Continuous) 10 Collector Current, I C [A] 1 0 1 ] A [ C I , t n e r r u C r o t c e l l o C 100us 1 ms 1 DC Operation . 0 1 0 . 0 Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 1 Single Nonrepetitive Pulse TJ 125 V GE = 15V RG = 13 0 0 0 1 0 0 1 0 1 1 1 . 0 0.1 0 100 ] V [ V , e g a t l o V r e t t i m E r o t c e l l o C E C Fig 15. SOA Characteristics 50 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, T rr [x10ns] Forward Current, I F [A] 20 10 0 1 400 500 600 700 20 30 0 300 Fig 16. RBSOA Characteristics Common Cathode V GE = 0V T C = 25 T C = 125 40 200 Collector-Emitter Voltage, V CE [V] 2 3 10 Irr 1 Common Cathode di/dt = 30A/ T C = 25 T C = 100 --------0.1 4 4 Forward Voltage, V F [V] Fig 17. Forward Characteristics T rr 8 12 16 Forward Current, IF [A] Fig 18. Reverse Recovery Characteristics (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ C o 5 2 1 = TC 0 0 1 C o 5 2 0 1 C o 5 2 1 = TC 0 1 1 FMS7G15US60S 0 0 1 0 0 0 1 1 C o 5 2 . 0 1 ] A u [ IR , t n e r r u C e s r e v e R 1 0 . 0 1 . 0 3 E 1 4 . 1 2 . 1 0 . 1 8 . 0 6 . 0 4 . 0 0 0 6 1 0 0 2 1 0 0 8 ] V [ VF , e g a t l o V s u o e n a t n a t s n I ] V [ R V , e g a t l o V e s r e v 0 e 0 R 4 0 ] A [ IF , t n e r r u C d r a w r o F s u o e n a t n a t s n I Fig 19. Rectifier( Converter ) Characteristics Fig 20. Rectifier( Converter ) Characteristics 0 0 8 3 6 1 0 5 7 3 0 0 7 3 0 0 6 3 0 5 6 3 2 1 8 0 5 5 3 4 0 0 5 3 0 5 4 3 0 0 0 4 3 t n a t s n o C X / 5 2 B ] K [ R , e c n a t s i s e R 0 5 3 3 0 0 3 3 0 0 1 5 7 ] C o 0 [ 5 e r u t a r 5 e 2 p m e T 0 5 2 - 5 2 1 0 0 1 ] C o [ 5 7 T , e r u t a r 0 e 5 p m e T 5 2 0 Fig 21. NTC Characteristics Fig 22. NTC Characteristics (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ FMS7G15US60S Package Dimension 25PM-AA -. Pin Coordinate Pin #No Name Plate 82.2 0.20 +0.20 71.0 -0.10 4- O6.0 4- O2.0 0.10 Dp 57.0 0.20 6.0 Coordinate x y 1 0.0 0.0 2 -3.0 0.0 3 -6.0 0.0 4 -13.0 0.0 5 -18.0 0.0 6 -25.0 0.0 7 -29.0 0.0 +0.20 22 17.5 0.20 1 4.30.20 23.00.15 21.0 0.20 +0.20 +0.20 O1.0 0.05 11.2 -0.10 3.2 -0.10 +0.20 +0.20 5.1 -0.10 4.30.20 +0.20 16.7 -0.10 14.00.15 12 16.3 -0.10 +0.20 30.8 -0.10 37.9 0.20 15 2- O4.3 -0.00 Mounting-Hole 8 -32.0 0.0 9 -35.0 0.0 10 -38.0 0.0 11 -46.5 0.0 12 -49.5 0.0 13 -49.5 11.5 14 -49.5 20.0 15 -49.5 28.0 16 -32.0 28.0 17 -29.0 28.0 18 -23.0 28.0 19 -20.0 28.0 20 -14.0 28.0 21 -11.0 28.0 22 3.5 28.0 23 3.5 20.0 24 3.5 11.5 25 3.5 5.5 * datum pin : #1 * Pin Tilt : 0.15 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A http://store.iiic.cc/ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2003 Fairchild Semiconductor Corporation Rev. I2 http://store.iiic.cc/