©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
IGBT
FMS7G15US60S
FMS7G15US60S
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and
general inverters where short-circuit ruggedness is
required.
Features
• Short Circuit Rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 15A
• High Input Impedance
• Built-in Brake & 1 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
Internal Circuit Diagram
23
24
45
25
1
21
20
19
18
9
13
17
16
14
10
15
2
8
7
NTC
11 12
36
Package Code : 25PM-AA
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol Description FMS7G15US60S Units
Inverter
&
Brake
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 80°C15 A
ICM (1) Pulsed Collector Current 30 A
IFDiode Continuous Forward Current @ TC = 80°C15 A
IFM Diode Maximum Forward Current 30 A
PDMaximum Power Dissipation @ TC = 25°C73 W
TSC Short Circuit Withstand Time @ TC = 100°C10 us
Converter
VRRM Repetitive Peak Reverse Voltage 1600 V
IOAverage Output Rectified Current 20 A
IFSM
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive 200 A
I2tEnergy pulse @ 1Cycle at 60Hz 164 A2s
Common
TJOperating Junction Temperature -40 to +150 °C
TSTG Storage Temperature Range -40 to +125 °C
VISO Isolation Voltage @ AC 1minute 2500 V
Mounting Torque Mounting part Screw @ M4 2.0 N.m
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©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
Electrical Characteristics of IGBT @ Inverter & Brake TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coeff. of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteristics
VGE(th) Gate - Emitter Threshold Voltage IC = 15mA, VCE = VGE 5.0 6.5 8.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 15A, VGE = 15V -- 2.1 2.7 V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 935 -- pF
Coes Output Capacitance -- 81 -- pF
Cres Reverse Transfer Capacitance -- 18 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 15A,
RG = 13Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 65 130 ns
trRise Time -- 80 160 ns
td(off) Turn-Off Delay Time -- 80 160 ns
tfFall Time -- 100 200 ns
Eon Turn-On Switching Loss -- 0.3 -- mJ
Eoff Turn-Off Switching Loss -- 0.3 -- mJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 15A,
RG = 13Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 70 140 ns
trRise Time -- 80 160 ns
td(off) Turn-Off Delay Time -- 90 180 ns
tfFall Time -- 210 350 ns
Eon Turn-On Switching Loss -- 0.33 -- mJ
Eoff Turn-Off Switching Loss -- 0.5 -- mJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V
@ TC = 100°C 10 -- -- us
QgTotal Gate Charge VCE = 300 V, IC = 15A,
VGE = 15V
-- 45 60 nC
Qge Gate-Emitter Charge -- 9 15 nC
Qgc Gate-Collector Charge -- 17 30 nC
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©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
Electrical Characteristics of DIODE @ Inverter & Brake TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE @ Converter TC = 25°C unless otherwise noted
Thermal Characteristics
NTC Thermistor Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward Voltage IF = 15A TC = 25°C-- 1.9 2.8 V
TC = 100°C-- 2.0 --
trr Diode Reverse Recovery Time
IF = 15A
di / dt = 30 A/us
TC = 25°C-- 75 150 ns
TC = 100°C-- 100 --
Irr
Diode Peak Reverse Recovery
Current
TC = 25°C-- 1.0 2.0 A
TC = 100°C-- 1.3 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 40 150 nC
TC = 100°C-- 65 --
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward Voltage IF = 20A TC = 25°C-- 1.1 1.5 V
TC = 100°C-- 1.0 --
IRRM Repetitive Reverse Current VR = VRRM
TC = 25°C-- -- 8 mA
TC = 100°C-- 5 --
Symbol Parameter Typ. Max. Units
Inverter RθJC Junction-to-Case (IGBT Part, per 1/6 Module) -- 1.7 °C/W
RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 2.5 °C/W
Brake RθJC Junction-to-Case (IGBT Part) -- 1.7 °C/W
RθJC Junction-to-Case (DIODE Part) -- 2.5 °C/W
Converter RθJC Junction-to-Case (DIODE Part, per 1/6 Module) -- 1.5 °C/W
Weight Weight of Module 60 -- g
Symbol Parameter Tol. Typ. Units
Thermistor
R25 Rated Resistance @ Tc = 25°C +/- 5 % 4.7 KΩ
R100 Rated Resistance @ Tc = 100 °C +/- 5 % 0.39 KΩ
B(25/100) B - Value +/- 3 % 3688
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©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
1
1
0
0
1
0
2
0
3
0
4
0
5
0
Common Emitter
VGE = 15 V
TC = 25℃ ━━
TC = 125℃ ------
C
o
l
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e
c
t
o
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C
u
r
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e
n
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IC
[
A
]
C
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c
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-
E
m
i
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V
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a
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VC
E
[
V
]
0
4
8
1
2
1
6
2
0
048
1
2
1
6
2
0
Common Emitter
TC = 125℃
3
0
A
1
5
A
IC
=
7
A
C
o
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c
t
o
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-
E
m
i
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r
V
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a
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V
C
E
(
s
a
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)
[
V
]
G
a
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-
E
m
i
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r
V
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a
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,
VG
E
[
V
]
-
5
0
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5
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1
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1
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0
1
.
0
1
.
5
2
.
0
2
.
5
3
.
0
3
.
5
4
.
0
Common Emitter
VGE = 15V
3
0
A
1
5
A
IC
=
8
A
C
o
l
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c
t
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r
-
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m
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V
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,
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E
(
s
a
t
)
[
V
]
C
a
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T
e
m
p
e
r
a
t
u
r
e
,
TC
[
oC
]
Fig 2. Typical Saturation Voltage Characteristics
0
2
4
6
8
0
1
0
2
0
3
0
4
0
5
0
6
0
Common Emitter
TC = 25oC
2
0
V1
5
V1
2
V
VG
E
=
1
0
V
C
o
l
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c
t
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C
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IC
[
A
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C
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-
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m
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V
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a
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,
VC
E
[
V
]
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Transient Thermal Impedance
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
0
4
8
1
2
1
6
2
0
048
1
2
1
6
2
0
Common Emitter
TC = 25℃
3
0
A
1
5
A
IC
=
7
A
C
o
l
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c
t
o
r
-
E
m
i
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r
V
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a
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,
V
C
E
(
s
a
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)
[
V
]
G
a
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-
E
m
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t
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r
V
o
l
t
a
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e
,
VG
E
[
V
]
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
10
Single Pulse
(Thermal Response)
F
R
D
I
G
B
T
Thermal Response, Zthjc [℃/W]
Rectangular Pulse Duration [sec]
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©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
2
0
4
0
6
0
8
0
1
0
0
1
0
0
1
0
0
0
Common Emitter
VCC = 300V, VGE = ±15V
IC = 15A
TC = 25℃ ━━
TC = 125℃ ------
E
o
f
f
E
o
f
f
E
o
n
S
w
i
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c
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L
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s
[
u
J
]
G
a
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R
e
s
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a
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,
RG
[Ω
]
2
0
4
0
6
0
8
0
1
0
0
1
0
0
1
0
0
0
Common Emitter
VCC = 300V, VGE = ±15V
IC = 15A
TC = 25℃ ━━
TC = 125℃ ------
T
o
f
f
T
f
T
f
S
w
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t
c
h
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T
i
m
e
[
n
s
]
G
a
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R
e
s
i
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a
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,
RG
[Ω
]
2
0
4
0
6
0
8
0
1
0
0
1
0
0
1
0
0
0
Common Emitter
VCC = 300V, VGE = ±15V
IC = 15A
TC = 25℃ ━━
TC = 125℃ ------
T
o
n
T
r
S
w
i
t
c
h
i
n
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T
i
m
e
[
n
s
]
G
a
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R
e
s
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a
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,
RG
[Ω
]
0
.
1
1
1
0
0
3
0
0
6
0
0
9
0
0
1
2
0
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1
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1
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0
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2
1
0
0
2
4
0
0
C
i
e
s
C
r
e
s
C
o
e
s
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25 oC
C
a
p
a
c
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t
a
n
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e
[
p
F
]
C
o
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-
E
m
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r
V
o
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a
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,
VC
E
[
V
]
Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
5
1
0
1
5
2
0
2
5
3
0
1
0
0
1
0
0
0
Common Emitter
VGE = ±15V, R
G = 13Ω
TC = 25℃ ━━
TC = 125℃ ------
T
r
T
o
n
C
o
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l
e
c
t
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C
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I
c
[
A
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S
w
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h
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T
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[
n
s
]
5
1
0
1
5
2
0
2
5
3
0
1
0
0
1
0
0
0
Common Emitter
VGE = ±15V, R
G = 13Ω
TC = 25℃ ━━
TC = 125℃ ------
T
f
T
o
f
f
T
o
f
f
T
f
S
w
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n
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C
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,
I
c
[
A
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http://store.iiic.cc/
©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
0
1
0
2
0
3
0
4
0
5
0
0369
1
2
1
5
3
0
0
V
VC
C
=
1
0
0
V
2
0
0
V
Common Emitter
RL = 20 Ω
TC = 25 oC
G
a
t
e
-
E
m
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V
o
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a
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VG
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[
V
]
G
a
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C
h
a
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Qg
[
n
C
]
5
1
0
1
5
2
0
2
5
3
0
1
0
0
1
0
0
0
1
0
0
0
0
Common Emitter
VGE = ±15V, R
G = 13Ω
TC = 25℃ ━━
TC = 125℃ ------
E
o
n
E
o
f
f
E
o
f
f
S
w
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[
u
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t
,
I
c
[
A
]
4 8 12 16
0.1
1
10
20
Common Cathode
di/dt = 30A/㎲
TC = 25℃
TC = 100℃ ---------
Irr
Trr
Peak Reverse Recovery Current, I
rr
[A]
Reverse Recovery Time, T
rr
[x10ns]
Forward Current, IF [A]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics Fig 16. RBSOA Characteristics
Fig 17. Forward Characteristics
0
.
1
1
1
0
1
0
0
1
0
0
0
0
.
0
1
0
.
11
1
0
1
0
0
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
IC MAX. (Continuous)
IC MAX. (Pulsed)
DC Operation
1 ms
100us
50 us
C
o
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c
t
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I
C
[
A
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VC
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[
V
]
0 100 200 300 400 500 600 700
0.1
1
10
50
Single Nonrepetitive
Pulse TJ ≤ 125℃
VGE = 15V
RG = 13 Ω
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
01234
0
10
20
30
40
50
Common Cathode
VGE = 0V
TC = 25℃
TC = 125℃
Forward Current, I
F [A]
Forward Voltage, VF [V]
Fig 18. Reverse Recovery Characteristics
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©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
0
4
0
0
8
0
0
1
2
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1
6
0
0
1
E
-
3
0
.
0
1
0
.
11
1
0
1
0
0
1
0
0
0
TC
=
1
2
5
oC
2
5
oC
R
e
v
e
r
s
e
C
u
r
r
e
n
t
,
IR
[
u
A
]
R
e
v
e
r
s
e
V
o
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t
a
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,
VR
[
V
]
0
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4
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6
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8
1
.
0
1
.
2
1
.
4
0
.
1
1
1
0
1
0
0
2
5
oC
TC
=
1
2
5
oC
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
IF
[
A
]
I
n
s
t
a
n
t
a
n
e
o
u
s
V
o
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t
a
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,
VF
[
V
]
0
2
5
5
0
7
5
1
0
0
1
2
5
048
1
2
1
6
R
e
s
i
s
t
a
n
c
e
,
R
[
KΩ
]
T
e
m
p
e
r
a
t
u
r
e
,
T
[
oC
]
-
2
5
0
2
5
5
0
7
5
1
0
0
3
3
0
0
3
3
5
0
3
4
0
0
3
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5
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3
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0
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3
5
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3
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7
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3
7
5
0
3
8
0
0
B
2
5
/
X
C
o
n
s
t
a
n
t
T
e
m
p
e
r
a
t
u
r
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[
oC
]
Fig 20. Rectifier( Converter ) Characteristics
Fig 21. NTC Characteristics Fig 22. NTC Characteristics
Fig 19. Rectifier( Converter ) Characteristics
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©2003 Fairchild Semiconductor Corporation FMS7G15US60S Rev. A
FMS7G15US60S
Dimensions in Millimeters
Package Dimension
28.0-29.017
28.0-32.016
28.0-49.515
20.0-49.514
11.5-49.513
0.0-49.512
0.0-46.511
0.0-38.010
0.0-35.09
28.0-11.021
28.0-14.020
28.0-20.019
28.0-23.018
0.0-32.08
yx
3.5
3.5
3.5
3.5
-29.0
-25.0
-18.0
-13.0
-6.0
-3.0
0.0
Coordinate
Pin
#No
5.525
11.524
20.023
28.022
0.07
0.06
0.05
0.04
0.03
0.02
0.01
-. Pin Coordinate
* datum pin : #1
* Pin Tilt : ±0.15
57.0
±0.20
71.0
-0.10
+0.20
82.2
±0.20
37.9
±0.20
30.8
-0.10
+0.20
23.0
±0.15
14.0
±0.15
1
2-
Ø
4.3
-0.00
+0.20
Ø
1.0
±0.05
11.2
-0.10
+0.20
16.3
-0.10
+0.20
21.0
±0.20
3.2
-0.10
+0.20
16.7
-0.10
+0.20
5.1
-0.10
+0.20
12
15 22
17.5
±0.20
4-
Ø
6.0
4-
Ø
2.0
±0.10 Dp
6.0
4.3
±0.20
4.3
±0.20
Name Plate
Mounting-Hole
25PM-AA
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©2003 Fairchild Semiconductor Corporation
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
FACT™
FACT Quiet series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TruTranslation™
UHC™
UltraFET®
VCX™
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
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