2SA1773 / 2SC4616
No.3399-1/5
Features
•Large current capacity (IC=2A).
•High breakdown voltage (VCEO≥400V).
Specifications ( ) : 2SA1773
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)400 V
Collector-to-Emitter Voltage VCEO (--)400 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)2 A
Collector Current (Pulse) ICP (--)4 A
Collector Dissipation PC1W
TC=25°C15W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)300V, IE=0A (--)1.0 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1.0 μA
DC Current Gain hFE VCE=(--)10V, IC=(--)100mA 40* 200*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA (40)60 MHz
Output Capacitance Cob VCB=(--)30V, f=1MHz (25)15 pF
Continued on next page.
* : The 2SA1773 / 2SC4616 are classified by 100mA hFE as follws:
Rank C D E
hFE 40 to 80 60 to 120 100 to 200
www.semiconductor-sanyo.com/network
Ordering number : EN3399D
80509CB TK IM TC-00002035 / 93003TN (KT)/83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459
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guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
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SANYO Semiconductors
DATA SHEET
2SA1773 / 2SC4616
2SA1773 : PNP Epitaxial Planar Silicon Transistor
2SC4616 : NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications