2SA1773 / 2SC4616
No.3399-1/5
Features
Large current capacity (IC=2A).
High breakdown voltage (VCEO400V).
Specifications ( ) : 2SA1773
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)400 V
Collector-to-Emitter Voltage VCEO (--)400 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)2 A
Collector Current (Pulse) ICP (--)4 A
Collector Dissipation PC1W
TC=25°C15W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)300V, IE=0A (--)1.0 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1.0 μA
DC Current Gain hFE VCE=(--)10V, IC=(--)100mA 40* 200*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA (40)60 MHz
Output Capacitance Cob VCB=(--)30V, f=1MHz (25)15 pF
Continued on next page.
* : The 2SA1773 / 2SC4616 are classified by 100mA hFE as follws:
Rank C D E
hFE 40 to 80 60 to 120 100 to 200
www.semiconductor-sanyo.com/network
Ordering number : EN3399D
80509CB TK IM TC-00002035 / 93003TN (KT)/83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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SANYO Semiconductors
DATA SHEET
2SA1773 / 2SC4616
2SA1773 : PNP Epitaxial Planar Silicon Transistor
2SC4616 : NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
2SA1773 / 2SC4616
No.3399-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)500mA, IB=(--)50mA (--)1.0 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)500mA, IB=(--)50mA (--)1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=(--)400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V
Turn-ON T ime ton See specified Test Circuit.
(0.12)0.085
μs
Strage T ime tstg See specified Test Circuit. (3.0)4.0 μs
Fall T ime tfSee specified Test Circuit. (0.3)0.6 μs
Package Dimensions Package Dimensions
unit : mm (typ) unit : mm (typ)
7518-003 7003-003
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8
5.5 1.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2 1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
VR
RL
VCE=150V
VBE=--5V
IC=10IB1= --10IB2=500mA
RL=300Ω, RB=20Ω, at IC=500mA
For PNP, the polarity is reversed.
++
50Ω
INPUT OUTPUT
RB
100μF 470μF
PW=20μsIB1
D.C.1% IB2
2SA1773 / 2SC4616
No.3399-3/5
Gain-Bandwidth Product, fT -- MHz
fT -- ICfT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
2SA1773
VCE=--10V
Ta=75°C
--25
°
C
--2.0
--1.6
--1.2
--0.4
--0.8
--1.8
--1.4
--1.0
--0.2
--0.6
0
2.0
1.6
1.2
0.4
0.8
1.8
1.4
1.0
0.2
0.6
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.2--1.0
ITR04607
2SC4616
VCE=10V
ITR04608
25
°
C
Ta=75
°
C
--25°C
0 0.2 0.4 0.6 0.8 1.41.21.0
25
°
C
IB=0mA
ITR04606
--200
--160
--120
--80
--40
00 --4 --8 --12 --16 --20
200
160
120
80
40
0048121620
IB=0mA
--0.2mA
--0.4mA
--0.6mA
--0.8mA
--1.0mA
--1.2mA
--1.4mA
--1.6mA
--1.8mA
--2.0mA 2SA1773
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
2SC4616
ITR04605
2SA1773
VCE=--10V
3
100
10
2
7
5
7
5
3
2
753253
--10 7--100 2537
--1000 753253
10 7100 2537
1000
ITR04611
2SC4616
VCE=10V
3
100
10
2
7
5
7
5
3
2
ITR04612
Ta=75°C
--25°C
2SA1773
VCE=--10V
ITR04609
100
7
7
5
3
5
3
2
3
2
10
7775 --1000--10 332532325
--100
100
7
7
5
3
5
3
2
3
2
10
7775 100010 332532325
100
Ta=75
°
C
--25
°
C
25
°
C
2SC4616
VCE=10V
ITR04610
25°C
2SA1773 / 2SC4616
No.3399-4/5
VBE(sat) -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
VCE(sat) -- IC
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Cob -- VCB
Output Capacitance, Cob -- pF
Switching Time, SW Time -- μs
SW Time -- IC
Collector Current, IC -- mA
Switching Time, SW Time -- μs
SW Time -- IC
Ta=75
°
C
25
°
C
--25
°
C
2SC4616
IC / IB=10
--10 --100
23 535 235777 --1000
--1.0
7
5
3
3
3
2
2
7
5
--0.1
1.0
7
5
3
3
3
2
2
7
5
0.1
10 100
23 535 235777 1000
Ta=
75°
C
25
°
C
--25
°
C
ITR04615 ITR04616
2SA1773
IC / IB=10
223237--10 35 57--100 7--1000
2
2
3
7
7
5
2
3
7
5
3
5
10
1.0
0.1
2
2
3
7
7
5
2
3
7
5
3
5
10
1.0
0.1
ITR04613
2SA1773
VCC=--150V
10IB1=--10IB2=IC
tstg
ton
tf
2232357
10 35 57100 71000ITR04614
2SC4616
VCC=150V
10IB1=--10IB2=IC
tstg
ton
tf
--10
--1.0
--10 --100 --1000
Ta=--25
°
C
75
°
C
3
3
2
7
5
7
5
10
1.0
3
3
2
7
5
7
5
35 2357 2357710 100 1000
3 5 2 3 57 2 3 577
2SA1773
IC / IB=10
ITR04617
25°C
Ta=--25
°
C
75
°
C
ITR04618
25°C
2SC4616
IC / IB=10
ITR04620
3
2
3
2
7
5
7
5
10
100
3
2
3
3
2
7
5
7
5
10
100
--1.0 37732--10 227--100
55 1.0 3773210 227100
55
ITR04619
2SA1773
f=1MHz 2SC4616
f=1MHz
2SA1773 / 2SC4616
No.3399-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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PS
This catalog provides information as of August, 2009. Specifications and information herein are subject
to change without notice.
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- mA
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
0
18
15
10
12
14
16
8
6
4
2
2006040 80 100 140120 160
PC -- Tc
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °C
0
1.2
1.0
0.8
0.6
0.4
0.2
2006040 80 100 140120 160
PC -- Ta
No heat sink
--1000
5
7
3
2
--100
5
7
3
2
5
7
3
2
5
7
3
2
--10
--1.0 --1.0--0.1 2537 --10
2537 --100
2537 253
10ms
DC operation (Ta=25
°
C)
DC operation (Tc=25°C)
1ms
IC= --2A
ITR04621
2SA1773
IT14853
ITR04624ITR04623
1.00.1 2537 10
2537 100
2537 2 753
1.0
1000
7
5
2
3
100
5
7
3
2
10
5
7
3
5
7
3
2
2
10ms
DC operation (Tc=25°C)
1ms
ICP=4A
IC=2A
DC operation (Ta=25
°
C)
2SC4616
ICP= --4A
2SA1773 / 2SC4616
2SA1773 / 2SC4616
Tc=25°C
Single pulse Tc=25°C
Single pulse