InGaAs PIN photodiodes
Wide spectral response range (0.5 to 1.7 μm)
G10899 series
www.hamamatsu.com 1
The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 m to 1.7 m. While stan-
dard InGaAs PIN photodiodes have spectral response ranging from 0.9 m to 1.7 m, the G10899 series has sensitivity extending
to 0.5 m on the shorter wavelength side. A wide range of spectrum can be detected with a single detector. The G10899 series
also features low noise and low dark current.
Features Applications
SpectroanalysisWide spectral response range
ThermometerLow noise, low dark current
Large active area available
Specifi cations / absolute maximum ratings
Electrical and optical characteristics (Ta=25 °C)
The G10899 series may be damaged by electrostatic discharge, etc. Be careful when using the G10899 series.
Type no. Window material Package Active area
(mm)
Absolute maximum ratings
Reverse
voltage
VR
(V)
Forward
current
If
(mA)
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
G10899-003K
Borosilicate glass
TO-18
φ0.3
5
10 -40 to +85 -55 to +125
G10899-005K φ0.5
G10899-01K φ1
G10899-02K TO-5 φ22
G10899-03K φ3
Type no.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo sensitivity
S
Dark
current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D*
λ=λp
NEP
λ=λp
λ=0.65 mλ=0.85 mλ=1.3 m
λ=λp
Min.
(A/W)
Typ.
(A/W)
Min.
(A/W)
Typ.
(A/W)
Min
.
(A/W)
Typ.
(A/W)
Min.
(A/W)
Typ.
(A/W)
Typ.
(nA)
Max.
(nA)
(m) (m) (MHz) (pF) (MΩ)
(cm・Hz
1/2
/W)
(W/Hz
1/2
)
G10899-003K
0.5 to 1.7
1.55
0.15 0.22 0.35 0.45 0.8 0.9 0.85 1
0.3 1.5 300 10 1000
5 × 10
12
5 × 10
-15
G10899-005K 0.5 2.5 150 20 300
9 × 10
-15
G10899-01K 1 5 45 70 100
2 × 10
-14
G10899-02K 5 25 10 300 25
4 × 10
-14
G10899-03K 15 75 5 600 10
6 × 10
-14
InGaAs PIN photodiodes G10899 series
2
Spectral response
Dark current vs. reverse voltage
Photo sensitivity temperature characteristic
Terminal capacitance vs. reverse voltage
Wavelength (µm)
(Typ. Ta=25 °C)
Photo sensitivity (A/W)
1.00.6 0.80.40.19
0
0.2
0.4
1.2
1.0
0.8
0.6
1.2 1.4 1.6 1.8
G10899 series
Si photodiode S1337-BR
Si photodiode
S1337-BQ
InGaAs PIN
photodiode
(standard type)
Dark current
Reverse voltage (V)
(Typ. Ta=25 °C)
100 nA
0.01 0.1
10 nA
100 pA
1 pA
10 pA
1 nA
1 µA
1 10 100
G10899-005K
G10899-003K
G10899-02K
G10899-01K
G10899-03K
0.60.2 0.4 1.2 1.6 1.8
Wavelength (µm)
Temperature coefficient (%/°C)
-1
(Typ. Ta=25 °C)
0.8 1.0 1.4
0
1
1.5
0.5
-0.5
2
Reverse voltage (V)
Terminal capacitance
0.01 0.1 1 10010
1 pF
(Typ. Ta=25 °C, f=1 MHz)
100 pF
10 nF
10 pF
1 nF
G10899-03K
G10899-01K
G10899-003K
G10899-005K
G10899-02K
KIRDB0408EA
KIRDB0414EC
KIRDB0409EA
KIRDB0410EC
InGaAs PIN photodiodes G10899 series
3
Shunt resistance vs. ambient temperature
Shunt resistance
Ambient temperature (°C)
1 GΩ
-40 -20 0 40 60
100 MΩ
1 MΩ
100 kΩ
10 MΩ
10 GΩ
100 GΩ
1 TΩ
20 80 100
G10899-01K
G10899-005K
G10899-003K
G10899-03K
G10899-02K
(Typ.)
KIRDB0411EC
KIRDA0150EA
Dimensional outlines (unit: mm)
G10899-003K/-005K/-01K
Window
3.0 ± 0.1
4.7 ± 0.1
2.7 ± 0.2
3.6 ± 0.213 Min.
5.4 ± 0.2
0.45
lead
Case
2.5 ± 0.2
Photosensitive
surface
InGaAs PIN photodiodes G10899 series
Cat. No. KIRD1109E02 Jun. 2010 DN
www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
KIRDA0151EA
G10899-02K/-03K
Window
5.9 ± 0.1
2.5 ± 0.2
0.15 Max.
0.4 Max.
8.1 ± 0.1
9.2 ± 0.2
4.2 ± 0.2
18 Min.
0.45
lead
Case
5.1 ± 0.3
1.5 Max.
Photosensitive
surface
4
