PH1214-55EL - M/A-COM Technology Solutions, Inc.

Radar Pulsed Power Transistor

55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty M/A-COM Products

Released, 30 May 07

PH1214-55EL

1 • North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and prod uct information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• NPN silicon microwave p ower transistors

• Common base configuration

• Broadband Class C op eration

• High efficiency inter-digitized geometry

• Diffused emitter ballasting resistors

• Gold metallization system

• Internal input and output impedance matching

• Hermetic metal/ceramic package

• RoHS compliant

Electrical Specifications: TC = 25 ± 5°C (Room Ambient )

Parameter Test Conditions Frequency Symbol Min Max Units

Collector-Emitter Breakdown Voltage IC = 120mA BVCES 58 - V

Collector-Emitter Leakage Current VCE = 28V ICES - 6.0 mA

Thermal Resistance Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.8 °C/W

Output Power Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz POUT 55 - W

Power Gain Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz GP 6.6 - dB

Collector Efficiency Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz ηC 50 - %

Input Return Loss Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz RL - -10 dB

Load Mismatch Tolerance Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz VSWR-T - 3:1 -

Load Mismatch Stability Vcc = 28V, Pin = 12W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 -

Absolute Maximum Ratings at 25°C

Parameter Symbol Rating Units

Collector-Emitter Voltage VCES 58 V

Emitter-Base Voltage VEBO 3.0 V

Collector Current (Peak) IC 7.0 A

Power Dissipation @ +25°C PTOT 220 W

Storage Temperature TSTG -65 to +200 °C

Junction Temperature TJ 200 °C

Outline Drawing

Radar Pulsed Power Transistor

55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty M/A-COM Products

Released, 30 May 07

PH1214-55EL

2 • North America Tel: 800.366.2266 / Fax: 978.366.2266