OL DE 3875081 0018349 7 3875081 GE SOLID STATE ote 18349 DT- 39~1 Standard Power MOSFETs _ : . IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect Transistors N-Channel Enhancement-M ode N-CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors 0 4.0A and 5.0A, 150V-200V Tos(On) =0.8.N and 1.20 Features: 6 SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance s Majority carrier device 8208-39741 : . . _ TERMINAL DIAGRAM The !RF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode silicon-gate power field- TERMINAL DESIGNATION effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay SOURCE drivers, and drivers for high-power bipolar switching tran- S { sistors requiring high speed and low gate-drive power. ey DRAIN These types can be operated directly from integrated O Pret circuits. [ GATE The !RF-types are supplied in the JEDEC TO-220A8 plastic TOP View package. 9208-39528 JEDEC TO-220AB Absolute Maximum Ratings Parameter IAF620 IRF621 IRF622 iRF623 Units Vps Osain - Source Voltage 200 150 200 150 v Vocr Drain - Gate Voltage (Rgg = 20KN) OD 200 150 200 160 v Ip GeTc = 25C Continuous Drain Current 6.0 50 40 40 A Ip @Te = 100C Canunvous Drain Current 30 30 25 25 A Ip Pulsed Drain Current @ 20 20 16 16 A V6s Gate - Source Voltage 20 v Po @Tc = 25C Max. Power Oissipation 40 (See Fig 14) Ww Linear Derating Factor 0.32 (Sea Fig 14) wee tum . . Inductive Current, Clamped (See Fig 15 and 16}1L = 100,H A : 20 I 20 | 16 { 16 ati tion Lead Temperature 300 (0 063 in_ {1.6mm} from case for 108) c 292; ween 01 def} ss7soaz oo1a3so 3 _3875081 G E SOLID STATE O1 18350 07*39-// Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter - Type Min. Typ. | Max. Units. Test Conditions 8Vpssg Drain - Source Breakdown Voltage IRFG20 . = iarezz | 2 | - v Vas = ov IRF621 : IRF623 160 - v Ip = 250pA Vesithy Gate Threshatd Voltage ALL 2.0 = [40 v Vps = Vos. lp = 250.A IGss Gate Source Leakage Forward ALL = - [sco | aa Yos = 20V 'gsg Gate-Source Leakage Reverse ALL = ~_|-500 oA Ve@s = :20V loss - Zero Gate Voltage Drain Current ALL = = 250 uA Vos = Max. Rating. Vag = OV = [1000 | pA Vpg = Max Rating x0 8, Vgg = OV, Te = 125C Ipfon! On State Orain Current @ iRF620 | gg _ _ A IRF621 Vos?! R, Vgg = 10V 0s ? 'pien}* "DStonl max Gs = wre22 | 44] _ | A IRFE23 . Roston} State Drain Source On-Stata IRF620 _ - OM Resistance @) IRFG21 05 | 08 a - Vgg = 10V,Ip = 2.54 IRF622 _ O38 1.2 n * IRF623 . Gis __ Forward Transconductance @ ALL ws [25] - [ sw Vos ? "oton) * "ostent max.: 'p = 2 94 Ciss laput Capacitance ALL - 450 | 600 pF Vos = OV. Vpg = 28,1 = 1.0MHz Coss __ Output Capacitance ALL - [150] 300 [oF See Fig 10 Crss Reverse Transfer Capacitance ALL - 40 80 oF tatony _ Turn-On Delay Time ALL -_ | 20 [40 as. Vop = 2-5BVpgg-lp = 2.54.2, = 500 t Rise Time ALL = 30 60 as See Fig. 17 Latott) Turn Olt Delay Time ALL = 50 100 as (MOSFET switching umes are essentally tr Fall Time ALL _ 30 0 nS Independent of operating temperature.} oO Tota! Gate Charge | Veg = 50V, Ip = 6 GA, Vig = 0.8 Max. Rating. g = S. o os (Gate Source Pius Gate-Drain) ALL M 15 ac SeeFig 18 for test circuit (Gate charge is essentially 0 ; Gate-Source Charge ALL _ 6.0 _ nc independent of operating temperature t Ogq Gate-Drain (Miller) Charge ALL - 6.0 - ac lp (Interna! Osan inductance - 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol! showing the to center of die. internal device ALL - 4.8 - nH Measured from the drain lead, 6mm (0 25 o In.) from package to center of die iw bs Internal Source Inductance ALL - 7.8 - aH Measured from the source lead, 6mm S is {0.25 tn.) from package to source banding pad s Thermal Resistance Pinjc Junction to Case ALL - - 312 | C/W Rincs Case to-Sink ALL ~ 1.0 - SC Mounting surface flat, smooth, and greased. Rua Junction-to-Ambient ALL - = 80 C/W Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current e620 f ~ Tso A Modifiad MOSFET symbot {Body Orodel IRFG21 . showing the mtegral TAF6Z2 teverse P-N juncuon rectifier. wreza | | ~ | #0] A ism Puise Source Current IRF620 _ G (Body Diode! IRFG21 ~ 12] 4A . : = 3s IRF622 irF623 | ~ | | 8 | & Vsp Diode Forward Voltage) eee) ~ f - fase] ov To = 25C. Ig = 5 0A. Vgg = OV Ineesa | ~ - | 14 v Te = 28C. Ig = 4.04, Vgg = OV te Reverse Recovery Time ALL = 350} = ns Ty = 150C, tp = 5 OA, dieidt = 100 Alps Ong Reverse Recovered Charge ALL - 2.3 = Ct Ty = 150C, tp = 5 OA, diefdt = 100 Alus ton Forward Tura-on Time ALL Intringtc turn on time ts negligible. Turn on speed 1s substanually controlled by Lg + Lp OTy = 25C to 150C @ Pulse Test: Pulse width < 300,s, Duty Cycle < 2%. @ Repetitive Rating Pulse width tmited J by max. junction temperature See Transient Thermal Impedance Curve (Fig 5} 2933875081 GE SOLID STATE __ Standard Power MOSFETs Gu DEM 3875041 oo1sass s o1 189351 pT S91. IRF620, IRF621, IRF622, |RF623 tp, ORAIN CURRENT (AMPERES) a a ai cu 0 Vos. ORAIN TG SGUACE VOLTAGE AOLTS) Fig. 1 Typical Output Characteristics tp, DRAIN CURRENT {AMPERES} 0 2 4 6 a Vg ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics os a & NN NORMALIZED EFFECTIVE TRANSIENT AMAL IMPEDANCE (PEA UNIT) a 6 Q1 005 a PULSE = on THERMAL & 2 a O01 10-5 2 5 10-4 2 5 103 100 ig Ip, ORAIN CURRENT (AMPERES) 10 = f}- 00 4 FULSE TEST - . . l Vos > tpion) * Raston) max, a 2 oe . . . . . = 6f------- e + 4 = = 2 f--.- - - 4 = 5 3 eybe- eee owe = 5 a |, Ty 125C ae tT BOTT Ts 25904 oe 7? * bt ys 5500 a oe { i pot 0 2 4 6 a 10 Vas GATE TO SOURCE VOLTAGE IVOLTS! Fig. 2 Typical Transfer Characteristics too AREA IS LIMITED BY 50 10 03 Np = 25C 1 ISOC MAX 02 L-]Rmse 23 12 CAV PULSE 4 au . 1 2))~~(U O20] 20 S00 Vos ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area fay ot ba 17. 1, OUTY FACTOR, O* t- 2 PER UNIT BASE = Ryne 3.12 DEG. CA 3 Ty -Te= Pom Znscttl 2 2 5 10 5 1.0 2 5 10 1. SQUARE WAVE PULSE OURATION {SECONDS} Fig. 5 M Effective Ti 294 Thermal d Case Vs. Pulse Duration- OL DE 3875081 001835e 7 3875081 G E SOLID STATE DIE 18352. pT S77/ Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 3 zm Ty= 150C NANSCONDUCTANCE (SIEMENS) i . = Yos> !pton)* 8pston} max. . ! 40 2 AULSE TEST . 4 - | 1 Ty= 2596 a I Ign. REVERSE DRAIN CURRENT (AMPERES) a 2 6 8 1 0 1 2 3 - 'o, ORAIN CURRENT (AMPERES Vgp. SOUACE TO DRAIN VOLTAGE (VOLTS Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 085 Vs = HOV ons BVuss, ORAIN TO SQUACE BREAKDOWN VOLTAGE (NOAMALIZED) Rps{on). ORALN-TO-SOURCE ON RESISTANCE (NORMALIZED) on 40 oe 40 80 120 160 a0 Q 40 0 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (2C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 ~ Normalized On-Resistance Vs. Temperature ta 1 Cigg * Cyp + Cog, Cay SHORTED Cre * Co CC, Cae Ci tyr Vg = 40v io} Vg * 16OV, 1RFEZO, 622 Cds + Cog 1 C, CAPACITANCE (pit Vgs. GATE-TO-SOUACE VOLTAGE (VOLTS) Ip GA FOR TEST CIRCUIT SEE FIGURE G 10 20 Key 40 50 G 4 8 42 16 20 Vos. GRAIN TG SGURFE VOLTAGE (VOLTS) Q3 TOTAL GATE CHARGE (nCt Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. We Typical Gate Charge Vs. Gate-to-Source Voltage 2953875081 GE SOLID STATE o1 pe f}3a7s0a1 oo1sasa 9 | T37-//. Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 in g z z 5 3 2 Vgg* tv a E 2 & = 3 g 10 : z - s z Z 2 g = Va i 3 = 3 _ ae z e nt Gs < Zz 05 a = ce) S = a & loStaa} MEASURED WITH CURRENT PULSE OF 20 ps DUAATION (AITIAL Ty= 25C (HEATING EFFECT OF 2.0.us PULSE IS MINIMAL) ri L 0 5 10 5 20 50 15 100 1 150 Jp. ORAIN CURRENT (AMPERES) Tg, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 40 Tt] Fry ~-4 +4 Pp, POWER DISSIPATION (WATTS) ns 3 wr - | : 4 5 i - + . 4 | | i. a 20 40 6 a 610014 Te. CASE TEMPERATURE ('C) Fig. 14 Power Vs. Temperature Derating Curve VARY t, TO O8TAIN REQUIAEO PEAK I, a our Ves 72 'p I lt Fig. 15 ~ Ciamped Inductive Test Circuit Fig. 16 Clamped Inductive Waveforms , Ze 1 *08q55 Fr Ve = OI5EV ps5 Vos oO (ISOLATED SUPPLY} CURRENT REGULATOR AOJUST AL OE; TO OBTAIN SPECIFIED Ip $ Re . WV y, - - BATTERY SAME TYPE AS OUT - | | 15mA Fig. 17 Switching Time Test Circuit a --- 10 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 296 __ -