A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 0.1 mA 20 V
BVCEO IC = 1.0 mA 10 V
BVEBO IE = 500 µA 2.5 V
ICBO VCB = 8.0 V 10 µA
hFE VCE = 5.0 V IC = 30 mA 50 300 ---
Ccb VCB = 6.0 V f = 1.0 MHz 0.7 1.0 pF
GNF VCE = 6.0 V IC = 10 mA f = 0.5 GHz
f = 1.0 GHz
10 16.5
12 dB
NF VCE = 6.0 V IC = 10 mA f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
1.0
1.5
2.8
2.0 dB
NPN SILICON RF TRANSISTOR
MRF571
DESCRIPTION:
The ASI MRF571 is Designed for low-
noise, wide dynamic range fr ont end
amplif iers.
Applications up to 2.0 GHz.
FEATURES:
• Low Noise Figure
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 70 mA
VCBO 20 V
VCEO 10 V
VEBO 3.0 V
PDISS 1.0 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
