Semiconductor Group 307/96
BUZ 74 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 1.5 A
gfs
1.8 2.1 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss
- 450 675
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
- 50 75
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
- 20 30
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.1 A
RGS = 50
Ω
td(on)
- 8 12
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.1 A
RGS = 50
Ω
tr
- 40 60
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.1 A
RGS = 50
Ω
td(off)
- 50 65
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.1 A
RGS = 50
Ω
tf
- 30 40