MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
650
V
R
DS(on),max
0.36
Ω
V
TH
,typ
3
V
I
D
11
A
Q
g,typ
28
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MM
P60R360P
TH
60R360P
-55 ~ 150
℃
TO
-
220
T
ube
Halogen Free
MM
P60R3
60
P
600V 0.36
Ω
N-channel MOSFET
Description
MMP60R
360P
is power MOSFET
using magnachi
p
’
s advanced super ju
nction technology
that can
realize v
ery low on-resistance and gate
charge. It w
ill provide much high e
fficiency by
using
optimized char
ge coupling technolo
gy
. These user
friendly
devices give an adv
antage of Low EM
I to
designers as w
ell as low sw
itching loss.
Features
Low Pow
er Loss by High Speed Sw
itching and Lo
w
On
-Resistance
100%
Av
alanche
T
es
ted
Green Packa
ge
–
Pb Free Plating, Halo
gen Free
Key Parameters
Ordering Informatio
n
Applications
PFC Pow
er Supply Stages
Switching
Applications
Adapter
Motor Control
DC
–
DC Converters
D
G
S
G
D
S
Package & Internal
Circui
t
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
600
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
I
D
11
A
T
C
=25
℃
6.95
A
T
C
=100
℃
Pulsed drain cu
rrent
(1)
I
DM
33
A
Power dissi
pation
P
D
83
W
Single - pulse aval
anche energy
E
AS
220
mJ
MOSFE
T dv/dt ruggedne
ss
dv/dt
50
V/ns
Diode dv
/dt r
uggedne
ss
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
℃
Maximum operatin
g junction
temperature
T
j
150
℃
1)
Pulse width t
P
limited by T
j,m
ax
2)
I
SD
≤
I
D
, V
DS peak
≤
V
(BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistance,
junction-case max
R
thjc
1.5
℃
/W
Thermal resistanc
e, junction-ambient max
R
thja
62.5
℃
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=25
℃
unless otherw
ise specified)
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
600
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
oltage
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.32
0.36
Ω
V
GS
= 10V
, I
D
=
3.8A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
890
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0MHz
Output Capacitance
C
oss
-
670
-
Reverse
T
ransfer Capacitance
C
rss
-
40
-
Effectiv
e Output Capacit
ance
Energy Related
(3)
C
o(er)
-
26
-
V
DS
= 0V to 480V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On D
elay
T
ime
t
d(on)
-
18
-
ns
V
GS
= 10V
,
R
G
= 25Ω,
V
DS
= 300V
, I
D
= 1
1A
Rise
T
ime
t
r
-
40
-
T
urn Of
f
Delay
Time
t
d(off)
-
80
-
Fall
T
ime
t
f
-
30
-
T
otal Gate Char
ge
Q
g
-
28
-
nC
V
GS
= 10V
,
V
DS
= 480V
,
I
D
= 1
1A
Gate
–
Source Cha
rge
Q
gs
-
7
-
Gate
–
Drain Char
ge
Q
gd
-
10
-
Gate Resistance
R
G
-
3.5
-
Ω
V
GS
= 0V
,
f = 1.0M
Hz
3) C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is
rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
℃
unless otherw
ise specified)
Dynamic Characteri
stics (T
c
=25
℃
unless otherw
ise specified)
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
11
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
= 11 A, VGS
= 0 V
Reverse Recov
ery Time
t
rr
-
375
-
ns
I
SD
= 11 A
di/dt = 100 A/μs
V
DD
= 100 V
Reverse Recov
ery Charge
Q
rr
-
4.1
-
μ
C
Reverse Recov
ery Current
I
rrm
-
21.8
-
A
Reverse Diode Ch
aracteristics (
T
c
=25
℃
unless otherwise specified)
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
5
Characteristic Gra
ph
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
6
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
7
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
8
V
DS
10V
1mA
DUT
100K
Ω
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K
Ω
V
gs
±
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on)
t
r
t
on
T
d(off)
t
f
t
off
V
DD
t
p
t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit
Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit
Fig18-2. Unclamped inductive waveform
R
g
25
Ω
T
est Circuit
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
9
Physical Dimensions
3 Leads
,
TO
-220
Dimensions are in mil
limeters unless
otherwise sp
ecified
MM
P60R360
P
Datasheet
Jun.
201
3 Revision 1.1
MagnaC
hip Semiconductor L
td
.
10
DISCLAIMER:
The
Products
are
not
des
igned
for
use
in
ho
stile
environments,
including,
without
limitatio
n,
aircraft,
nuclear
power
generation,
medical
appliances,
and
dev
ices
or
systems
in
w
hich
malfunction
of
any
Product
can
re
asonably
be
expected
to
result
in
a
personal
injury.
Seller’s
customers
using
or
selling
Seller’s
p
roducts
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaC
hip
reserves the
right
to change
the s
pecification
s
and circuitry
without notice
at
any time.
MagnaC
hip
does not
consid
er
responsibility
for
use
of
any
circuitry
other
than
circuitry
entirely
included
in
a
MagnaChip
product.
is
a
registered
trademark
of
MagnaChip
Semiconductor
Ltd.
Suppliers Inquiry
Previous
Next
Link
Name *
Reason for Contact
General Inquiry
Place Order
Report Issue
Target Price (Option)
Email Address *
Message *
BOM / Attach Files (Option)
Maximum allowed file size is 10MB