June 2017
DocID030697 Rev 1
1/9
This is information on a product in full production.
www.st.com
TN5015H-6G
High temperature 50 A SCRs
Datasheet - production data
Features
High junction temperature: Tj = 150 °C
High noise immunity dV/dt = 500 V/µs up to
150 °C
Gate triggering current IGT = 15 mA
Peak off-state voltage VDRM/VRRM = 600 V
High turn-on current rise dI/dt = 100 A/µs
ECOPACK®2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Solid state relays
Description
Thanks to its junction temperature Tj up to
150 °C, the device offers high thermal
performance operation up to 50 A. Its D²PAK
package allows modern SMD designs as well as
compact back to back configuration.
Its trade-off noise immunity (dV/dt = 500 V/μs)
versus its gate triggering current (IGT = 15 mA)
and its turn-on current rise (dI/dt = 100 A/μs)
allow to design robust and compact control circuit
for voltage regulator in motorbikes and industrial
drives, overvoltage crowbar protection, motor
control circuits in power tools and kitchen
appliances, inrush current limiting circuits.
Table 1: Device summary
Order code
VDRM/VRRM
IGT
TN5015H-6G
D²PAK
600 V
15 mA
D²PAK
A
A
KG
A
K
G
Characteristics
TN5015H-6G
2/9
DocID030697 Rev 1
1 Characteristics
Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180 ° conduction angle)
Tc = 120 °C
50
A
IT(AV)
Average on-state current
(180 ° conduction angle)
Tc = 122 °C
30
A
Tc = 128 °C
25
Tc = 134 °C
20
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
493
A
tp = 10 ms
450
I2t
I2t value for fusing
tp = 10 ms
1012
A2s
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
f = 60 Hz
100
A/µs
VDRM/VRRM
Repetitive peak off-state voltage
Tj = 150 °C
600
V
VDSM/VRSM
Non repetitive surge peak off-state voltage
tp = 10 ms
VDRM/VRRM +
100
V
IGM
Peak gate current
tp = 20 µs
Tj = 150 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 150 °C
1
W
VRGM
Maximum peak reverse gate voltage
5
V
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Maximum operating junction temperature
-40 to +150
°C
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test conditions
Value
Unit
IGT
VD = 12 V, RL = 33 Ω
Max.
15
mA
VGT
Max.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ
Tj = 150 °C
Min.
0.15
V
IH
IT = 500 mA, gate open
Max.
60
mA
IL
IG = 1.2 x IGT
Max.
80
mA
dV/dt
VD = 402 V, gate open
Tj = 150 °C
Min.
500
V/µs
tgt
ITM = 100 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs
Typ.
1.9
µs
tq
ITM = 100 A, VD = 402 V,
(dI/dt)off = 30 A/µs, VR = 25 V,
dVD/dt = 50 V/µs
Tj = 150 °C
Typ.
85
µs
TN5015H-6G
Characteristics
DocID030697 Rev 1
3/9
lTable 4: Static characteristics
Symbol
Test conditions
Value
Unit
VTM
ITM = 100 A, tp = 380 µs
Tj = 25 °C
Max.
1.65
V
VTO
Threshold voltage
Tj = 150 °C
Max.
0.85
RD
Dynamic resistance
Tj = 150 °C
Max.
9
mΩ
IDRM, IRRM
VD = VDRM = VRRM
Tj = 25 °C
Max.
10
µA
Tj = 150 °C
6
mA
Table 5: Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (DC)
Max.
0.6
°C/W
Rth(j-a)
Junction to ambient (DC)
S(1) = 1 cm²
Typ.
45
Notes:
(1)S = Copper surface under tab
Characteristics
TN5015H-6G
4/9
DocID030697 Rev 1
1.1 Characteristics (curves)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and DC on-state current versus
case temperature
Figure 3: Average and D.C. on state current versus
ambient temperature
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
0
10
20
30
40
50
0 5 10 15 20 25 30 35 40 45 50
IT(AV)(A)
P(W)
α= 30°
α= 60°
α= 90°
α= 120° α= 180° D.C
0
10
20
30
40
50
60
0 25 50 75 100 125 150
TC(°C)
IT(AV)(A)
D.C
α= 18
α= 30° α= 60° α=90° α=12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
TA(°C)
IT(AV)(A)
D.C
α= 180 °
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
tp(s)
K=[Zth /Rth]
Zth(j-a)
Zth(j-c)
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
Tj(°C)
IGT,VGT [Tj] / IGT,VGT [Tj=25 °C]
IGT
VGT
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
-50 -25 0 25 50 75 100 125 150
TjC)
IH, IL[Tj]/ IH, IL[Tj=25 °C]
IH
IL
TN5015H-6G
Characteristics
DocID030697 Rev 1
5/9
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure 10: On-state characteristics
(maximum values)
Figure 11: Relative variation of leakage current
versus junction temperature
Figure 12: Thermal resistance junction to ambient
versus copper surface under tab
0
1
2
3
4
5
6
7
8
9
10
11
12
90 95 100 105 110 115 120 125 130 135 140 145 150
Tj(°C)
dV/dt[ Tj] / dV/dt[ Tj= 150 °C ]
Above test equipment capability
VD= 402 V
0
100
200
300
400
500
1 10 100 1000
Number of cycles
ITSM(A)
Non repetitive
Tjinitial = 25 °C
Repetitive
Tc= 120 °C
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
VDRM = VRRM = 600 V
IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V]
Tj(°C)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
SCu(cm²)
Rth(j-a)(°C/W)
Epoxy printed board FR4, eCU= 35 µm
Package information
TN5015H-6G
6/9
DocID030697 Rev 1
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Epoxy meets UL94, V0
Lead-free, halogen-free package
2.1 D²PAK package information
Figure 13: D²PAK package outline
TN5015H-6G
Package information
DocID030697 Rev 1
7/9
Table 6: D²PAK package mechanical data
Ref.
Dimensions
Millimeters
Inches(1)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60
0.1693
0.1811
A1
2.49
2.69
0.0980
0.1059
A2
0.03
0.23
0.0012
0.0091
A3
0.25
0.0098
b
0.70
0.93
0.0276
0.0366
b2
1.25
1.7
0.0492
0.0669
c
0.45
0.60
0.0177
0.0236
c2
1.21
1.36
0.0476
0.0535
D
8.95
9.35
0.3524
0.3681
D1
7.50
8.00
0.2953
0.3150
D2
1.30
1.70
0.0512
0.0669
e
2.54
0.1
E
10.00
10.28
0.3937
0.4047
E1
8.30
8.70
0.3268
0.3425
E2
6.85
7.25
0.2697
0.2854
G
4.88
5.28
0.1921
0.2079
H
15
15.85
0.5906
0.6240
L
1.78
2.28
0.0701
0.0898
L2
1.27
1.40
0.0500
0.0551
L3
1.40
1.75
0.0551
0.0689
R
0.40
0.0157
V2
Notes:
(1)Dimensions in inches are given for reference only
Figure 14: D²PAK recommended footprint (dimensions are in mm)
Ordering information
TN5015H-6G
8/9
DocID030697 Rev 1
3 Ordering information
Figure 15: Ordering information scheme
Table 7: Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN5015H-6G
TN5015H6
D²PAK
1.5 g
50
Tube
TN5015H-6G-TR
TN5015H6
D²PAK
1.5 g
1000
Tape and reel
4 Revision history
Table 8: Document revision history
Date
Revision
Changes
08-Jun-2017
1
Initial release.
TN = SCR
Series
Current
50 = 50 A
Gate sensitivity
15= A15 m
Voltage
6 = 600 V
Package
G=D²PAK
Packing mode
Blank = tube
TR = Tape and reel
TN 50 15 H - 6 G - TR
High temperature
H = 150 °C
TN5015H-6G
DocID030697 Rev 1
9/9
IMPORTANT NOTICE PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications , and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics All rights reserved