JDH3D01FV(TPL3) - TOSHIBA - Datasheet.Directory

JDH3D01FV

2017-08-03

Toshiba Electronic Devices & Storage Corporation

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

JDH3D01FV

○ For wave detection

• Small package

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Note: Signal level when capacitance is measured: Vsig = 20 mVrms

Marking

Caution

This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other

objects that come into direct contact with the product should be made of antistatic materials.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 1-2S1C

Characteristic Symbol Rating Unit

Reverse voltage VR 4 V

Forward current IF 25 mA

Junction temperature Tj 125 °C

Storage temperature range Tstg -55 to 125 °C

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF IF = 2 mA ― 0.25 ― V

Forward current IF VF = 0.5 V 25 ― ― mA

Reverse current IR VR = 0.5 V ― ― 25 uA

Capacitance C

= 0.2 V, f = 1 MHz ― 0.6 ― pF

B H

VESM

1.2±0.05

0.32±0.05

0.4

0.22±0.05

0.8

0.05

0.8±0.05

1.2

0.05

0.5±0.05

0.13±0.05

1. ANODE1

2. CATHODE2

3. CATHODE1/ANODE2

Weight: 1.5mg(typ.)

Start of commercial production

2004-

JDH3D01FV

2017-08-03

Toshiba Electronic Devices & Storage Corporation

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