Continental Device India Limited Data Sheet Page 1 of 3
2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS
2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS 6486 6487 6488
6489 6490 6491
Collector-base voltage (open emitter) VCBO max. 50 70 90 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 V
Collector current ICmax. 15 A
Total power dissipation up to TC = 25°C Ptot max. 75 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 5 A; IB = 0.5 A VCEsat max. 1.3 V
D.C. current gain
IC = 5 A; VCE = 4 V hFE min. 20
max. 150
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 6486 6487 6488
6489 6490 6491
Collector-base voltage (open emitter) VCBO max. 50 70 90 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
TO-220 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 15 A
Base current IBmax. 5.0 A
Total power dissipation up to TC = 25°C Ptot max. 75 W
Derate above 25°C max. 0.6
W/
°
C
Total power dissipation up to TA = 25°C Ptot max. 1.8 W
Derate above 25°C max. 0.014
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 °
C
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 °
C/W
From junction to case Rth j–c 1.67 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 6486 6487 6488
6489 6490 6491
Collector cutoff current
IB = 0; VCE = 20 V ICEO max. 1.0 mA
IB = 0; VCE = 30 V ICEO max. 1.0 mA
IB = 0; VCE = 40 V ICEO max. 1.0 mA
VEB(off) = 1.5 V; VCE = 45 V ICEX max.500 µA
VEB(off) = 1.5 V; VCE = 65 V ICEX max. 500 µA
VEB(off) = 1.5 V; VCE = 85 V ICEX max. 500 µA
VEB(off) = 1.5 V; VCE = 40 V; TC=150°C ICEX max. 5.0 mA
VEB(off) = 1.5 V; VCE = 60 V; TC=150°C ICEX max. 5.0 mA
VEB(off) = 1.5 V; VCE = 80 V; TC=150°C ICEX max. 5.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 200 mA; IB = 0 VCEO(sus)* min. 40 60 80 V
IC = 1 mA; IE = 0 VCBO min. 50 70 90 V
IC = 200 mA; VBE = 1.5 V VCEX(sus)* min. 50 70 90 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 5 A; IB = 0.5 A VCEsat* max. 1.3 V
IC = 15 A; IB = 5 A VCEsat* max. 3.5 V
Base-emitter on voltage
IC = 5 A; VCE = 4 V VBE(on)* max. 1.3 V
IC = 15 A; VCE = 4 V VBE(on)* max. 3.5 V
D.C. current gain
IC = 5 A; VCE = 4 V hFE* min. 20
max. 150
IC = 15 A; VCE = 4 V hFE* min. 5.0
Transition frequency
IC = 1 A; VCE = 4 V; f = 1 MHz fT(1) min. 5.0 MHz
Small signal current gain
IC = 1.0A; VCE = 4V; f = 1.0 KHz hfe min. 25
* Pulse test: pulse width 300 µs; duty cycle 2%
(1) fT = |hfe|• ftest
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
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neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-579 5290, 5141 1119
email@cdil.com www.cdilsemi.com