UNNJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de- veloping an extensive fine of negative resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and each offers a special advantage for a particular trigger function. In addition, each can be used for various non-trigger applications. The featuresboth in design and characteristicswhich you receive with these products are concisely defined for each series: TYPES CONVENTIONAL UNIJUNCTIONS 2N489-494proved reliability; MIL spec version. 2N2646-47low cost, proved hermetic sealed device. PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT)variable threshold, low cost, fast switching speed, and circuit adjustable electrical characteristics. COMPLEMENTARY UNIJUNCTION TRANSISTORu!timate in temperature stability for timing and oscillator applications. SILICON UNILATERAL SWITCH (SUS)-a stable fixed low voltage threshold, low cost, high performance 4-layer diode. SILICON BILATERAL SWITCH (SBS)low voltage triac trigger, two silicon unilateral switches connected back to back. SILICON CONTROLLED SWITCH (SCS)high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression. APPLICATIONS Unijunctions . Device Triggers Conventional Complementary Programmable 2N489-94, 2N2646 DSK1 2N6027 sus SBS 2N1671, 2N2160 2N2647 DSK2 2N6028 2N4983-90 2N4991-93 DC, Lo Cost F E E DC, Hi Perf. E DC, Volt Regulator F E E: E 1 E DC, Inverter DC, Hi AI/AT AC, @, Hi Perf. AC, , Hit AC, Lo RFI AC, , Lo Cost Trigger for SCRs nm >1 hr. F P F P F F P F P >1 min, Lo Cost F >1 min, Stable P <1 min, Lo Cost F <1 min, Stable P <10 P 10-25V E >25v P Stability F Cost F Adjust, Range E Military P Hi-Rel P F ajml al mi mim] ole] ol mae ain wlan] = F E F P F P E N N N F N N F F N N N Pp F E Economy rm E = Excellent, F Fair, P = Poor, N = Not Applicable With additional circuitry 2 Hermetic version 2N6116-18 123 VUUAUUAUNAU UATE CONVENTIONAL UNISUNCTIONS General Electric produces a very broad line of standard UJTs. The TO-5 ceramic disc bar structure device has been the workhorse of the unijunction industry for over 10 years. MIL versions are available on the 2N489-494 series. The cube structure TO-18 series offers excellent value for those requiring proved, low cost units. Applications Oscillators SCR Triggers Timers Frequency Divider Sawtooth Generators Stable Voltage Sensing Rno te leo Vos, interbase n \Wv Peak Point Emitter Base One Resistance intrinsic Valley Emitter Reverse Current Peak Pulse = 3V Standoff Current Current Voltage GE le = 0 Ratio Min. Max, Max. T2=25C Min. Comments Type @ Vos = 10V (mA) (uA) (uA) 7) Package 2N489 2N489/ * i -51-.62 2N4690 2N490 2N490A * 2N49068 2N4906 2N491 2N4914 * 2N4916 2N492 2N492A\ * 2N492B 2N4926 2N493 2N493/A * 2N493B 2N494 2N494A * 2N494B 2N494C 2N1671 2N1671A 2N1671B 2n1671C 2N2160 2N2646 .56-.75 10-5 Bar Structure 10-18 Cube Structure 2N2840 -62 Typical * JAN & JANTX types available 2 Vee=1.5V 124 Silicon Unijunction Transistor 2N2160__| 2N2221 SEE GES2221 2N2222 SEE GES2222 | 2N2322-29 SEE C5 SERIES The General Electric Silicon Unijunction Transistor is a three terminal device having a stable N type negative resistance characteristic over a wide tempera- ture range. A stable peak point voltage, a low peak point current, and a high pulse current rating make this device useful in oscillators, timing circuits, trigger circuits and pulse generators where it can serve the purpose of two conventional silicon or germanium transistors. The 2N2160 is intended for hobbyist applications where circuit economy is of primary importance. This transistor features Fixed-Bed Construction and is her- metically sealed in a welded case. All leads are electrically isolated from the case. a STOMAX_ 360MIN absolute maximum rati ngs. (25C) (unless otherwise specified) Ie, spun I RMS Power Dissipation 450 mw! + RMS Emitter Current 50 ma t Peak Emitter Current 2 amperes Emitter Reverse Voltage 30 volts Interbase Voltage 35 volts NS BE wr 0312003 1 30 XY EMITTER . eaD 2 | BASE ONE 61 }GOLO LEADS Ozs{norE 2) BASE TwO..B2) 017 * QQ? (wore 3} -65C to +140C -65C to +150C Operating Temperature Range Storage Temperature Range electrical characteristics: (25C) unless otherwise specified) Note Min. Max. Units Intrinsic Standoff Ratio (V gg =10V) N 2 0.47 0.80 Interbase Resistance (V gp =3V, I =0) R pro 3 4.0 12.0 Kohms Modulated Interbase Current (V gp =10V, I ,=50ma) T p2~mop) 6.8 30 ma Emitter Reverse Current (Vm2e =30V, Ip; =O) Tro 12 ua Peak Point Emitter Current (V gg =25V) Ip 25 ua Valley Point Current (V 33 =20V, Rg, =100 ohms) Iy 8 ma Base-One Peak Pulse Voltage (See Circuit Shown) Vos 3.0 volts Notes: (1) Derate 3.9 mw/C increase in ambient temperature (Thermal Resistance to case = 0.16C/mw). (2) The intrinsic standoff ratio, y , is essentially constant with temperature and interbase voltage. is defined by the equation: 200 Vp = Vag + T; Where Vp = Peak point emitter voltage Ves = Interbase voltage T; = Junction Temperature (Degrees Kelvin) (3) The interbase resistance is nearly ohmic and increases with temperature in a well-defined manner. The temperature coefficient at 25C is approximately 0.8%/C. 332