fy, SGS-THOMSO yf Seen BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR a FULLY MOLDED ISOLATED PACKAGE a 2000 V DC ISOLATION(U.L. COMPLIANT) APPLICATIONS a GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD24iGFP is silicon epitaxial-base NPN transistor mounted in TQ-220FP tully molded isolated package. It is inteded for power linear and switching applications. TO-220FP INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B FO(3) SC05960 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VceR Collector-Base Voltage (Ree = 100 0) 115 V VcEo Gollector-Emitter Voltage (lp = 0) 100 Vv VeEBO Emitter-Base Voltage (Ic = 0) 5 Vv Ic Collector Current 3 A lcm Collector Peak Gurrent 5 A IB Base Current 1 A Prot Total Dissipation at Te < 25 C 15 Ww Tsig Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. January 1998 1/4 BD241CFP THERMAL DATA Rihj-case | Thermal Resistance Junction-case Max | 8.4 Ciw | ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. | Max. Unit IcEO Collector Cut-off Vce = 60 V 0.3 mA Current (Ip = 0) Ices Collector Cut-off Voce = 100 V 0.2 mA Current (VgeE = 0) IEBO Emitter Cut-off Current |Vep =5 V 1 mA (Ic = 0) Vceo(susy* | Collector-Emitter lc = 30 mA 100 Vv Sustaining Voltage (Ip = 9) Vocesaiy | Collector-Emitter Ilc=3A IBpH=O06A 1.2 Vv Saturation Voltage VeE(on)* |Base-Emitter Voltage Ic=3A Voce =4V 18 V hee: DCG Current Gain Ic=1A Vore=4V 25 Ic=3A Voce =4V 10 * Pulsed: Pulse duration = 300s, duty cycle< 2% For PNP types voltage and current values are negative. 2/4 AYP esouscreones BD241CFP TO-220FP MECHANICAL DATA 3/4 AYP esouscreones BD241CFP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from itsuse. No license is granied by implication or olherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject io change without notice. This publication supersedes and replaces all information previously supplied. SGS8-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved $GS8-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Ganada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AYP esouscreones