BD245, BD245A, BD245B, BD245C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD246A-C e 80 Wat 25 C Case Temperature e 10 A Rated Collector Current e = Min fy of 3 MHz at 10 V, 500 mA mechanical data 1271 -13,3_+| j=: 10,5 ee 13,5 = +| aS a ft cai Base i -3.3+ 0,5 oy |. 3,82 + 0.05-| 31% - 0,05 rmax 0,t, All dimensions are in mm += 20,5 +]6,9% +0,0 | . -O4 TO-3P absolute maximum ratings at 25 C case temperature (unless otherwise noted) Collector-Emitter Voltage (RBE = 100 Q) Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current - + . Safe Operating Region at {or below) 25 oc Case Temperature : Continuous Device Dissipation at (or below) 25 OC Case Temperature (See Note 3) . - Continuous Device Dissipation at {or below) 25 oc Free- Air, Temperature (See Note 4) . Unclamped Inductive Load Energy (See Note 5) Operating Collector Junction Temperature Range . Storage Temperature Range : Lead Temperature 1/8 Inch from Case for 5 Seconds : NOTES: 1. This value applies when the base-emitter diode is open-circuited. 2. This value applies for ty, ss 3. 4 5. 0.3 ms, duty cycle S10 %. Derate linearly to 150 C case temperature at the rate of 0.64 W/C. . Derate linearly to 150 C free-air ternperature at the rate of 28 MW/OC. . This rating is based on the capability of the transistor to operate safaly in the circuit of Figure 2. L = 20 mH, Reg, = 100 Q, Vee2 = 0 V. Rg = 0.1 92, Veg = 10 V. Energy 1021/2. t pt trt BD245A BD245B 7OV 90V 60 V 80V 5V 10A 15A 3A See Figure 5 80 W 3.0 W 62.5 mJ 65 9C to 150 9C 65 C to 150 9C 250 OC BD245C 115 V 100 Vv + ++ dt bedsvd PRELIMINARY DATA SHEET: Supplementary data published may be at a later date. TEXAS INSTRUMENTS 2-47BD245, BD245A, BD245B, BD245C electrical characteristics at 25 C case temperature BD245 BD245A BD245B8 BD245C PARAMETER MIN MAX MIN MAX MIN MAX MIN MAX UNIT ViBRICEO ig = 30 mA, 1g = 0, 45 60 80 100 Vv See Note 6 lcEO Vce =30V, ig =0 0.7 0.7 A Vce =60V, Ig=0 0.7 07 Ices Voce = 45, Vee =0 0.4 Voce =60V, Vee =0 04 mA Vce = 80V, Vee =0 0.4 Vce = 100V, Vee =9 0.4 jEBO Vep=5V, to =o 1 1 1 1 mA hee Voce =4V. IG= 1A, 40 40 40 40 See Notes6and7 In =3A 20 20 20 20 Voce =4V, Ic=10A 4 4 4 4 See Notes 6 and 7 VBE Vce =4V, Ic =3A, 1.6 1.6 1.6 1.6 Vv See Notes 6 and 7 Vee =4V, Ig=10A 3 3 3 3 v . See Notes 6 and 7 Vee lsat) Ig =0.3A, Ig=3A, 1 1 1 1 v See Notes 6 and 7 (pi2.5A, Ig =10A, 4 4 4 4 v See Notes 6 and 7 hte Vee = 10V, Ie = 0.5 A, 20 20 20 20 f= 1 kHz hee! VcE=10V, ig =0.5 4A, 3 3 3 3 #=1MHz NOTES: 6. These parameters must be measured using pulse techniques. ty ~ 300 Us, duty cycle <2 %. 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER MAX UNIT Rguc dunction-to-Case Thermal Resistance 1.56 oc/iw R6a dunction-to-Free-Air Thermal Resistance $2.0 switching characteristics at 25 OC case temperature PARAMETER TEST CONDITIONS * TYP UNIT ton Iota, ipt1) =0.1 A, \g(2) = 0.1 A, 0.3 tott VBE(oft) =3-7V. RL = 202, See Figure 1 1 Bs + Voltage and Current values shown are nominal; exact values vary slightly with transistor parameters. TEXAS INSTRUMENTS.BD245, BD245A, BD245B, BD245C rw iS e16V A 90% iv fon ACE weet i eton po nel tof, p OUTPUT 80% TEST CIRCUIT VOLTAGE WAVEFORMS . z Yce Monitor 1 ee Nate) Input TF LP Voltage R vm pet 100msa ansaes 2b 25Acnb a penne ee te Input Amar 7 wA concn" sie Te | | soo | Montes ORICER ppm | ~ ~ Collectar | | Vai s1ov Sf Voltage i ' _. Ov / q-deed TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS Dissipation derating curve : Ptot =f (Tc) g max, safe operating area Tc 25C 0 20 A 10 C-Operation {p= 300ps; d=10% I p HS, Ptot c tps ims;dsl0% tp = 10ms;,d=l0% ' 0) 0 25 50 75 100 125 C 150 t 10 wo Vv To ___ > VoE ~ a TEXAS INSTRUMENTS 2-49BD245, BD245A, BD245B, BD245C = 30mA =f (Ree); -120 876a +10 -100 VER | ap 2458 -90 BD 265A BO245 10 102 103 104 9 10 Rae VCE (sat) Ot Mee fll); V =4V 874 10 -Ol | A-10 Ic > VBE =f (Ic) V6 TT TTT v Poy ry 1 ii | (E(t ye I lc Lou 4 - | VBE \ | 12 t + Lit OL ! Sf WO wre - tof flin a - UE AAA | | it] | a6 | | LU LI 0.1 1 A10 I~ _ TEXAS INSTRUMENTS 2-50 TI cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TI IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIB3-4 SILIZIUM-KOMPLEMENTARE-LEISTUNGSTRANSISTOREN (Allgemeine und NF-Anwendungen) SILICON COMPLEMENTARY POWER TRANSISTORS (General and Low-frequency Applications) Prot @ Typ To = 25 C VCEO lcp hee @ Ic type (100 C) min max min max NPN PNP Ww A A BD 239 BD 240 30 45 2 40 0,2 BD 239A BD 240A 30 60 2 40 0,2 BD 239 B BD 240B 30 80 2 40 0,2 BD 239 C BD 240C 30 100 2 40 0,2 BD 241 BD 242 40 45 3 25 1 BD 241A BD 242A 40 60 3 25 1 BD 241B BD 2428 40 80 3 25 1 BD 241C BD 242C 40 100 3 25 1 BD 243 BD 244 65 45 6 30 9,3 BD 243A BD 244A 65 60 6 30 0,3 BD 2438 BD 244B 65 80 6 30 0,3 BD 243 C BD 244C 65 100 6 30 0,3 BD 245 BD 246 80 45 10 40 1 BD 245A BD 246A 80 60 10 40 1 BD 2458 BD 246B 80 80 10 40 1 BD 245C BD 246C 80 100 10 40 1 BD 249 BD 250 125 45 25 25 1,5 BD 249A BD 250A 125 60 25 25 1,5 BD 249 B 8D 250B 125 80 25 25 15 BD 249C BD 250C 125 100 25 25 1,5 TIP 29 TIP 30 30 40 1 40 200 0,2 TIP 29A TIP 30A 30 60 1 40 200 0,2 TIP 29B TIP 308 30 80 1 40 200 0,2 TIP 29C Tip 30C 30 100 1 40 200 0,2 TIP 31 TIP 32 40 40 3 25 100 1 TIP31A TIP 32 A 40 60 3 25 100 1 TIP 31B TIP 32B 40 80 3 25 100 1 TIP 31C TIP 32C 40 100 3 25 100 1 TIP 33 TIP 34 80 40 10 40 125 1 TIP 33 A TIP 34A 80 60 10 40 125 1 TIP 33 B TIP 348 80 80 10 40 125 1 TIP 33.6 TIP 34 80 100 10 40 125 1 TAP 35 TIP 36 90 40 25 25 100 1,5 TIP 35A TIP 386A 90 60 25 25 100 15 TEXAS INSTRUMENTSfr Ices @ VCE Gehause Anwendungen, Bemerkungen mn (IcEQ} package applications, remarks Mz HA Vv TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P Verstarker, Schalter TO-66P amplifier, switch TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 3 200 40 TO-66P Verstarker, Schalter, komplementar zu TIP 30 amplifier, switch, complementary to TIP 30 3 200 60 TO-66P Verstarker, Schaiter, komplementar zu TIP 30 A amplifier, switch, complementary to TIP 30 A 3 200 80 TO-66P Verstarker, Schalter, komplementar zu TIP 30 B amplifier, switch, complementary to TIP 30 B 3 200 100 TO-66P Verstarker, Schalter, komplementar zu TIP 30 C amplifier, switch, complementary to TIP 30 C 3 300 40 TO-66P Verstarker, Schalter, komplementar zu TIP 32 amplifier, switch, complementary to TIP 32 3 300 60 TO-3P Verstarker, Schalter, komplementar zu TIP 32 A amplifier, switch, complementary to TIP 32 A 3 300 80 TO-3P Verstarker, Schalter, komplementar zu TIP 32 B amplifier, switch, complementary to TIP 32 B 3 300 100 TO-3P Verstarker, Schalter, komplementar zu TIP 32 C amplifier, switch, complementary to TIP 32 C 3 400 40 TO-3P Verstarker, Schalter, komplementar zu TIP 34 amplifier, switch, complementary to TIP 34 3 400 60 TO-3P Verstarker, Schalter, komplementar zu TIP 34 A amplifier, switch, complementary to TIP 34 A 3 400 80 TO-3P Verstarker, Schalter, komplementar zu TIP 34 B amplifier, switch, complementary to TIP 34 B 3 400 100 TO-3P Verstarker, Schalter, komplementar zu TIP 34 C amplifier, switch, complementary to TIP 34 C 3 700 40 TO-3P Verstarker, Schalter, komplementar zu TIP 36 amplifier, switch, complementary to TIP 36 3 700 60 TO-3P Verstarker, Schalter, komplementar zu TIP 36 A amplifier, switch, complementary to TIP 36 A TEXAS INSTRUMENTS 3-5Typ f Vcc Pin Pout BVcBO BVCEQ Gehause type MHz package 2N 5713 150 13 3,4 11 60 40 TO-128 2N 5773 400 28 0,12 15 65 35 TO-117 2N 5774 400 26 1 8 65 35 TO-129 2N 5848 50 12,5 3,25 20 48 24 145 Prot @ Typ Te = 25 0C VCEO Iep here @-sIe type (100 C) min max min max PNP NPN w Vv A A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 65 60 1 40 160 0,15 BD 140 BD 139 65 80 1 40 160 0,15 BD 240 BD 239 30 45 2 40 0,2 BD 240A BD 239A 30 --60 2 40 0,2 BD 2408 BD 239 B 30 -80 -2 40 02 BD 240C BD 239C 30 100 ~2 40 0,2 BD 242 BD 241 40 45 -3 25 1 BD 242A BD 241A 40 ~60 ~3 25 1 BD 242B BD 241B 40 80 -3 25 1 BD 242C BD 241C 40 100 3 25 1 BD 244 BD 243 65 45 6 30 0,3 BD 244A BD 243A 65 60 6 30 0,3 BD 244B BD 2438 65 80 -6 30 0,3 BD 244C BD 243C 65 100 6 30 0,3 BD 246 BD 245 80 45 10 40 1 BD 246A BD 245A 80 60 10 40 1 BD 246 B BD 2458 80 --80 ~10 40 1 BD 246C BD 245C 80 100 --10 40 1 BD 250 BD 249 125 45 25 25 1,5 BD 250A BD 249A 125 60 25 25 15 BD 2508 BD 2498 125 80 --25 25 1,5 BO 250C BD 249C 125 100 25 25 1,5 BDX 14 30 ~60 3 25 100 0,5 BDX 15 117 70 10 20 70 4 3-14 TEXAS INSTRUMENTSTyp type 2N 5941 2N 5942 2N 5943 MHz 30 250 Vcc 28 28 1 Pin Pout BVcBO BVCcEO Gehause package 40PEP 65 35 DIA-4L 80PEP 65 35 DIA-4L 50 mA 7dB 40 30 TO-39 trin WHz Ices @ VCE (IcEO) uA Vv Gehause package SOT-32 SOT-32 SOT-32 TO-66P TO-66P TO-66P TO-S6P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-66P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P 08 08 TO-66 TO-3 Anwendungen, Bemerkungen applications, remarks Prot = Tc 65 C Verstarker und Schalter amplifier and switch Schaiter, Verstarker, komplementar 2N 3054 Schalter, Verstarker, komplementar 2N 3055 TEXAS INSTRUMENTS 3-15