MIXA225RF1200TSF tentative XPT IGBT Module VCES = IC25 = VCE(sat) = 1200 V 360 A 1.8 V Boost chopper + free wheeling Diodes + NTC Part number MIXA225RF1200TSF 5 2 1 8 9 T 4 3 DBoost D 10/11 6 Features / Advantages: Applications: Package: SimBus F * High level of integration - only one power semiconductor module required for the whole drive * Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic * Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) * Temperature sense included * SONICTM diode - fast and soft reverse recovery - low operating forward voltage * Brake for AC motor drives * Boost chopper * Switch reluctance drives * Industry standard outline * RoHS compliant * Soldering pins for PCB mounting * Height: 17 mm * Base plate: Copper internally DCB isolated * Advanced power cycling IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20121102 1-4 MIXA225RF1200TSF tentative IGBT T Ratings Symbol Definitions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient gate emitter voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 225 A; VGE = 15 V TVJ = 25C TVJ = 125C VGE(th) gate emitter threshold voltage IC = 9 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V; VCE = 0 V VCE = 600 V; VGE = 15 V; IC = 225 A 690 nC inductive load VCE = 600 V; IC = 225 A VGE = 15 V; RG = 3.3 W TVJ = 125C 60 70 280 310 20 27 ns ns ns ns mJ mJ VGE = 15 V; RG = 3.3 W VCEmax = 1200 V TVJ = 125C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA ICM reverse bias safe operating area SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink Conditions min. typ. TVJ = 25C to 125C TC = 25C TC = 80C TC = 25C VCEmax = 1200 V VCE = 900 V; VGE = 15 V; RG = 3.3 W; non-repetitive TVJ = 125C 1.8 2.1 5.4 max. Unit 1200 V 20 30 V V 360 250 A A 1100 W 2.1 V V 6.5 V 0.3 mA mA 1.5 A 0.3 500 A 10 s A 0.115 K/W 900 0.045 K/W Diode DBoost VRRM max. repetitive reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 265 185 A A VF forward voltage IF = 225 A; VGE = 0 V TVJ = 25C TVJ = 125C 1.80 1.70 2.10 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.3 0.3 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy 32 250 340 11.7 C A ns mJ RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink VR = 600 V -diF /dt = 3300 A/s IF = 225 A; VGE = 0 V IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved TVJ = 125C 0.145 0.05 K/W K/W 20121102 2-4 MIXA225RF1200TSF tentative Diode D Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitive reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 65 45 A A VF forward voltage IF = 60 A; VGE = 0 V TVJ = 25C TVJ = 125C 2.0 2.0 2.2 V V IR reverse current * not applicable, see Ices value of IGBT T VR = VRRM TVJ = 25C TVJ = 125C * * mA mA RthJC thermal resistance junction to case 0.5 K/W RthCH thermal resistance case to heatsink 0.2 Package SimBus F K/W Ratings Symbol Definitions Conditions I RMS RMS current per terminal min. typ. Tstg storage temperature -40 125 C TVJM virtual junction temperature -40 150 C 3400 V~ 6 6 Nm Nm 350 IISOL < 1 mA; 50/60 Hz MD MT mounting torque (M5) terminal torque (M6) d Spp/App d Spb/Apb creepage distance on surface / striking distance through air VISOL isolation voltage t = 1 second terminal to terminal 12.7 mm terminal to backside 10.0 mm 3000 V 2500 V 50/60 Hz, RMS, IISOL < 1 mA t = 1 minute V = VCEsat + 2x Rterm-chip*IC resp. V = VF + 2x R*IF 2D Data Matrix XXX XX-XXXXX Logo UL Part number M I X A 225 RF 1200 T EH Date Code Location Part Name Marking on Product Standard MIXA225RF1200TSF MIXA225RF1200TSF 0.65 mW Part number YYWWx Ordering = Module = IGBT = XPT = standard = Current Rating [A] = Boost / brake chopper + free wheeling diode = Reverse Voltage [V] = NTC = E3-Pack Delivering Mode Base Qty Ordering Code Box Temperature Sensor NTC 3 511581 Ratings Symbol Definitions Conditions min. typ. R25 B25/50 resistance temperature coefficient TC = 25C 4.75 5.0 3375 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved g 3 3 resistance terminal to chip Unit A Weight Rterm-chip max. max. Unit 5.25 kW K 20121102 3-4 MIXA225RF1200TSF tentative Outlines SimBus F 9 65 87 4 R2,5 50 22 57,5 10 62 0,46 0 3,75 0,8 11,06 7,25 0 7,75 37,73 33,92 64,4 60,59 87,26 17 20,5 1,2 3 11 12 57,96 94,5 110 122 137 152 5 2 1 8 9 T 4 3 DBoost D 6 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 10/11 20121102 4-4 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIXA225RF1200TSF