NTE460 - NTE ELECTRONICS, INC. - Datasheet.Directory

NTE460

Silicon P−Channel JFET Transistor

AF Amp

TO72 Type Package

Absolute Maximum Ratings:

Drain−Gate Voltage, VDG 20V............................................................

Reverse Gate−Source Voltage, VGSR 20V.................................................

Gate Current, IG10mA..................................................................

Total Device Dissipation (TA = +255C), PD0.3W............................................

Derate above 255C 1.7mW/5C.....................................................

Storage Temperature Range, Tstg −655 to +2005C..........................................

Electrical Characteristics: (TA = +255C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Gate−Source Breakdown Voltage V(BR)GSS IG = 105A, VDS = 0 20 − − V

Gate Reverse Current IGSS VGS = 10V, VDS = 0 − − 10 nA

VGS = 10V, VDS = 0, TA = +1505C− − 10 5A

ON Characteristics

Zero−Gate−Voltage Drain Current IDSS VDS = −10V, VGS = 0, Note 1 2.0 −6.0 mA

Gate−Source Voltage VGS VDG = −15V, ID = 105A− − 6.0 V

Drain−Source Resistance rDS ID = 1005A, VGS = 0 − − 800 3

Small−Signal Characteristics

Forward Transfer Admittance |yfs| VDS = 10V, ID = 2mA, f = 1kHz, Note 1 1500 −3000 5mhos

VDS = 10V, ID = 2mA, f = 10MHz, Note 1 1350 − − 5mhos

Output Admittance |yos| VDS = 10V, ID = 2mA, f = 1kHz − − 40 5mhos

Reverse Transfer Conductance |yrs| VDS = 10V, ID = 2mA, f = 1kHz − − 0.1 5mhos

Input Conductance |yis| VDS = 10V, ID = 2mA, f = 1kHz − − 0.2 5mhos

Inpu Capacitance Ciss VDS = 10V, VGS = 1V, f = 1MHz − − 20 pF

Functional Characteristics

Noise Figure NF VDS = −5V, ID = 1mA, Rg = 1M3, f = 1kHz − − 3.0 dB

Note 1. Pulse Test: PulseWidth 3 630ms, Duty Cycle 3 10%.

Rev. 10−13