MBRF1090CT & MBRF10100CT
Vishay General Semiconductor
Document Number: 88681
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: ITO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 5.0 A x 2
VRRM 90 V, 100 V
IFSM 120 A
VF0.75 V
TJ max. 150 °C
ITO-220AB
PIN 2
PIN 1
PIN 3
123
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT
Maximum repetitive peak reverse voltage VRRM 90 100 V
Working peak reverse voltage VRWM 90 100 V
Maximum DC blocking voltage VDC 90 100 V
Maximum average forward rectified current at TC = 105 °C total device
per diode IF(AV) 10
5.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 120 A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/µs
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
Isolation voltage
from terminal to heatsink with t = 1 min VAC 1500 V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBRF1090CT MBRF10100CT UNIT
Maximum instantaneous forward voltage
per diode (1)
IF = 5.0 A
IF = 5.0 A
TC = 125 °C
TC = 25 °C VF 0.75
0.85 V
Maximum reverse current per diode at
working peak reverse voltage (1)
TJ = 25 °C
TJ = 100 °C IR 100
6.0
µA
mA
MBRF1090CT & MBRF10100CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88681
Revision: 08-Nov-07
2
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT
Typical thermal resistance per diode RθJC 6.8 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB MBRF10100CT-E3/45 1.99 45 50/tube Tube
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
2
4
6
10
050 100 150
8
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
0
20
60
40
100
80
120
1100
10
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0 0.2 1.0 1.2 1.4 1.60.4
100
10
0.1
0.01
1
0.6 0.8
TJ = 100 °C
TJ = 150 °C
TJ = 175 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.01
0.001
0.1
1
10
100
0.0001
200 10040 60 80
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
MBRF1090CT & MBRF10100CT
Vishay General Semiconductor
Document Number: 88681
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Transient Thermal Impedance Per Diode
0.01 10
1
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Figure 6. Typical Junction Capacitance Per Diode
101 100
10
100
1000
0.1
1
Reverse Voltage (V)
Junction Capacitance (pF)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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