2N5151-220M 2N5153-220M MECHANICAL DATA Dimensions in mm (inches) 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89 HIGH SPEED MEDIUM VOLTAGE SWITCHES 4.70 5.00 10.41 10.67 DESCRIPTION 1 2 3 12.70 19.05 The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in TO-220 (JEDEC TO-257AB) metal case intended for use in switching applications. 0.89 1.14 2.54 BSC The complementary NPN types are the 2N5152-220M and 2N5154-220M respectively 2.65 2.75 TO-220 (TO-257AB) Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS TCASE = 25c unless otherwise stated 2N5151 2N5153 VCBO Collector - Base Voltage -100V VCEO Collector - Emitter Voltage (IB = 0) -80V VEBO Emitter - Base Voltage (IC = 0) -5.5V IC Continuous Collector Current -5A IC(PK) Peak Collector Current -10A IB Base Current -2.5A Ptot Total Dissipation at Tamb = 25C 4.4W Tcase = 50C 21.4W Tcase = 100C 14.3W Tstg Storage Temperature Range Tj Operating Junction temperature -65 to +200C 200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3630 Issue 1 2N5151-220M 2N5153-220M THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 7 C/W Rthj-amb Thermal Resistance Junction-ambient Max 40 C/W ELECTRICAL CHARACTERISTICS FOR 2N5151-220M (Tcase = 25C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage VBE(sat) Base Emitter Saturation Voltage VBE Base Emitter Voltage hFE DC Current Gain CCBO Collector Base Capacitance hFE Small Signal Current Gain Test Conditions Turn Off Time Unit -1 A VCE = -100V VBE = 0 -1 mA VCE = -60V Tcase = 150C -500 VBE = 2V A VCE = -40V IB = 0 -50 VEB = -4V IC = 0 -1 A VEB = -5.5V IC = 0 -1 mA IC = -100mA IB = 0 IC = -2.5A IB = -250mA -0.75 IC = -5A IB = -500mA -1.5 IC = -2.5A IB = -250mA -1.45 IC = -5A IB = -500mA -2.2 IC = -2.5A VCE = -5V -1.45 IC = -50mA VCE = -5V 20 IC = -2.5A VCE = -5V 30 IC = -5A VCE = -5v 20 Tcase = -55C IC =2.5A VCE = -5V 15 IE = 0 80 250 f = 1MHz IC = -0.1A VCE = -5V VCE = -5v IC = -5A VCC = 30v IB1 = -0.5A IC = -5A VCC = 30V IB1=-IB2 = 0.5A V 90 VCB = -10V f = 20MHz toff Max. VBE = 0 IC = -0.5A Turn On Time Typ. VCE = -60V f = 1KHz ton Min. pF 20 3 0.5 s 1.3 s * Pulse test tp = 300s , < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3630 Issue 1 2N5151-220M 2N5153-220M ELECTRICAL CHARACTERISTICS FOR 2N5153-220M (Tcase = 25C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage VBE(sat) Base Emitter Saturation Voltage VBE Base Emitter Voltage hFE DC Current Gain CCBO Collector Base Capacitance hFE Small Signal Current Gain Test Conditions Turn Off Time Unit -1 A VCE = -100V VBE = 0 -1 mA VCE = -60V Tcase = 150C -500 VBE = 2V A VCE = -40V IB = 0 -50 VEB = -4V IC = 0 -1 A VEB = -5.5V IC = 0 -1 mA IC = -100mA IB = 0 IC = -2.5A IB = -250mA -0.75 IC = -5A IB = -500mA -1.5 IC = -2.5A IB = -250mA -1.45 IC = -5A IB = -500mA -2.2 IC = -2.5A VCE = -5V -1.45 IC = -50mA VCE = -5V 50 IC = -2.5A VCE = -5V 70 IC = -5A VCE = -5v 40 Tcase = -55C IC =2.5A VCE = -5V 35 IE = 0 80 250 f = 1MHz IC = -0.1A VCE = -5V VCE = -5v IC = -5A VCC = 30v IB1 = -0.5A IC = -5A VCC = 30V IB1=-IB2 = 0.5A V 200 VCB = -10V f = 20MHz toff Max. VBE = 0 IC = -0.5A Turn On Time Typ. VCE = -60V f = 1KHz ton Min. pF 50 3.5 0.5 s 1.3 s * Pulse test tp = 300s , < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3630 Issue 1