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DESCRIPTION/ORDERING INFORMATION
LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
Power-Amplifier Control Loops
5-MHz Gain Bandwidth Product
Cellular Phones
5-V/μs Slew Rate
Portable Equipment
Low Noise: 20 nV/Hz
Wireless LANs
1.22-mA/Channel Supply Current Radio Systems
VOS < 3 mV Max Cordless Phones
Low Supply Voltage: 2.7 V to 5 V
Rail-to-Rail Inputs and Outputs
Unity Gain Stable
1.5-μA Shutdown ICC
2.2-μs Turn On
The LMV712 dual operational amplifier is a high-performance BiCMOS operational amplifier intended for
applications requiring rail-to-rail inputs, combined with speed and low noise. The device offers a bandwidth of
5 MHz, a slew rate of 5 V/μs, and operates with capacitive loads of up to 200 pF without oscillation.
The LMV712 offers two independent shutdown (1SD, 2SD) pins. This feature allows disabling of each device
separately and reduces the supply current to less than 1 μA typical. The output voltage rapidly and smoothly
ramps up with no glitch as the amplifier comes out of the shutdown mode.
The LMV712 is offered in the space-saving SON (DRC) package and in an MSOP (DGS) package. These
packages are designed to meet the demands of small size, low power, and low cost required by cellular phones
and similar battery-operated portable electronics.
ORDERING INFORMATION
TAPACKAGE(1) ORDERABLE PART NUMBER TOP-SIDE MARKING
Reel of 2500 LMV712IDGSR
MSOP DGS RNB
Reel of 250 LMV712IDGST
–40°Cto85°CReel of 3000 LMV712IDRCR
SON DRC PREVIEW
Reel of 250 LMV712IDRCT
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright © 2006, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
www.ti.com
+
IN
IN+
OUT
IN
IN+
VBIAS1
Class AB
Control OUT
VBIAS2
IN
IP
VCC+
BIAS
Control
VCC
SD
LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
SYMBOL (EACH AMPLIFIER)
SIMPLIFIED SCHEMATIC (EACH AMPLIFIER)
2
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Absolute Maximum Ratings(1)
ESD Protection
Recommended Operating Conditions
LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC+ –V
CC– Supply voltage(2) 5.5 V
±Supply
VID Differential input voltage(3) V
voltage
VIInput voltage range (any input) VCC– –0.4 V
CC+ +0.4 V
VOOutput voltage range VCC– –0.4 V
CC+ +0.4 V
IIInput current(4) ±10 mA
IOOutput current ±50 mA
DGS package 165
θJA Package thermal impedance(5)(6) °C/W
DRC package TBD
TJOperating virtual junction temperature 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values (except differential voltages and VCC specified for the measurement of IOS) are with respect to the network GND.
(3) Differential voltages are at IN+ with respect to IN–.
(4) Excessive input current will flow if a differential input voltage in excess of approximately 0.6 V is applied between the inputs, unless
some limiting resistance is used.
(5) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD=(T
J(max) TA)/θJA. Operating at the absolute maximum TJof 150°C can affect reliability.
(6) The package thermal impedance is calculated in accordance with JESD 51-7.
TYP UNIT
Human-Body Model 1500 V
Machine Model 150 V
MIN MAX UNIT
VCC+ –V
CC– Supply voltage 2.7 5 V
TAOperating free-air temperature –40 85 °C
3
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Electrical Characteristics
LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
VCC+ = 2.7 V, VCC– = GND, VCM = 1.35 V, and RL>1MΩ(unless otherwise noted)
PARAMETER TEST CONDITIONS TAMIN TYP MAX UNIT
25°C0.43
VIO Input offset voltage VCM = 0.85 V and 1.85 V mV
–40°Cto85°C3.2
25°C5.5115
IIB Input bias current pA
–40°Cto85°C130
25°C5075
Common-mode
CMRR 0 VCM 2.7 V dB
rejection ratio –40°Cto85°C45
25°C7090
VCM =0.85V –40°Cto85°C68
Power-supply
PSRR 2.7 V VCC+ 5V dB
rejection ratio 25°C7090
VCM =1.85V –40°Cto85°C68
CMRR 50 dB –0.3 –0.2
Common-mode
CMVR 25°CV
voltage range 2.9 3
25°C1525
Sourcing VO=0 –40°Cto85°C12
Output
ISC mA
short-circuit current(1) 25°C2550
Sinking VO=2.7V –40°Cto85°C22
25°C 2.62 2.68
VOH –40°Cto85°C2.6
RL=10kΩto 1.35 V 25°C 0.01 0.12
VOL –40°Cto85°C0.15
VOOutput voltage swing V
25°C 2.52 2.55
VOH –40°Cto85°C2.5
RL= 600 Ωto 1.35 V 25°C 0.05 0.23
VOL –40°Cto85°C0.3
Output voltage level
VO(SD) 25°C10200mV
in shutdown mode
25°C 1.22 1.7
ON mode mA
–40°Cto85°C1.9
Supply current
ICC per channel 25°C 0.12 1.5
Shutdown mode μA
–40°Cto85°C2
25°C80115
Sourcing RL=10kΩ,
VO= 1.35 V to 2.3 V –40°Cto85°C76
25°C80113
Sinking RL=10kΩ,
VO=0.4Vto1.35V –40°Cto85°C76
Large-signal
AVOL dB
voltage gain 25°C8097
Sourcing RL= 600 Ω,
VO= 1.35 V to 2.2 V –40°Cto85°C76
25°C80100
Sinking RL= 600 Ω,
VO=0.5Vto1.35V –40°Cto85°C76
ON mode 2.4 to 2.7 2 to 2.7
VSD Shutdown pin voltage 25°CV
Shutdown mode 0 to 0.8 0 to 1
GBWP Gain bandwidth product 25°C 5 MHz
SR(2) Slew rate 25°C5V/μs
ΦmPhase margin 25°C60°
Input referred
Vnf=1kHz 25°C20nV/Hz
voltage noise
(1) Shorting the output to either supply rail adversely affects reliability.
(2) Number specified is the slower of the positive and negative slew rates.
4
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LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
Electrical Characteristics (continued)
VCC+ = 2.7 V, VCC– = GND, VCM = 1.35 V, and RL>1MΩ(unless otherwise noted)
PARAMETER TEST CONDITIONS TAMIN TYP MAX UNIT
2.2 4
Turn-on time from
T(on) 25°Cμs
shutdown 4.6
5
www.ti.com
Electrical Characteristics
LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
VCC+ = 5 V, VCC– = GND, VCM = 2.5 V, and RL>1MΩ(unless otherwise noted)
PARAMETER TEST CONDITIONS TAMIN TYP MAX UNIT
25°C0.43
VIO Input offset voltage VCM = 0.85 V and 1.85 V mV
–40°Cto85°C3.2
25°C5.5115
IIB Input bias current pA
–40°Cto85°C130
25°C5080
Common-mode
CMRR 0 VCM 5V dB
rejection ratio –40°Cto85°C45
25°C7090
VCM =0.85V –40°Cto85°C68
Power-supply
PSRR 2.7 V VCC+ 5V dB
rejection ratio 25°C7090
VCM =1.85V –40°Cto85°C68
CMRR 50 dB –0.3 –0.2
Common-mode
CMVR 25°CV
voltage range 5.2 5.3
25°C2035
Sourcing VO=0 –40°Cto85°C18
Output
ISC mA
short-circuit current(1) 25°C2550
Sinking VO=5V –40°Cto85°C21
25°C 4.92 4.98
VOH –40°Cto85°C4.9
RL=10kΩto 2.5 V 25°C 0.01 0.12
VOL –40°Cto85°C0.15
VOOutput voltage swing V
25°C 4.82 4.85
VOH –40°Cto85°C4.8
RL= 600 Ωto 2.5 V 25°C 0.05 0.23
VOL –40°Cto85°C0.3
Output voltage level
VO(SD) 25°C10200mV
in shutdown mode
25°C 1.17 1.7
ON mode mA
–40°Cto85°C1.9
Supply current
ICC per channel 25°C 0.12 1.5
Shutdown mode μA
–40°Cto85°C2
25°C80130
Sourcing RL=10kΩ,
VO=2.5Vto4.6V –40°Cto85°C76
25°C80130
Sinking RL=10kΩ,
VO=0.4Vto2.5V –40°Cto85°C76
Large-signal
AVOL dB
voltage gain 25°C80110
Sourcing RL= 600 Ω,
VO=2.5Vto4.6V –40°Cto85°C76
25°C80107
Sinking RL= 600 Ω,
VO=0.4Vto2.5V –40°Cto85°C76
ON mode 4.5 to 5 3.5 to 5
VSD Shutdown pin voltage 25°CV
Shutdown mode 0 to 0.8 0 to 1.5
GBWP Gain bandwidth product 25°C 5 MHz
SR(2) Slew rate 25°C5V/μs
ΦmPhase margin 25°C60°
Input referred
Vnf=1kHz 25°C20nV/Hz
voltage noise
(1) Shorting the output to either supply rail adversely affects reliability.
(2) Number specified is the slower of the positive and negative slew rates.
6
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LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
Electrical Characteristics (continued)
VCC+ = 5 V, VCC– = GND, VCM = 2.5 V, and RL>1MΩ(unless otherwise noted)
PARAMETER TEST CONDITIONS TAMIN TYP MAX UNIT
1.6 4
Turn-on time
T(on) 25°Cμs
from shutdown 4.6
7
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TYPICAL CHARACTERISTICS
LMV712
LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER
WITH INDEPENDENT SHUTDOWN
SLOS485JANUARY 2006
GRAPH PREVIEWS
Supply Current per Channel vs Supply Voltage (ON Mode)
Supply Current per Channel vs Supply Voltage (Shutdown Mode)
Input Offset Voltage vs Common-Mode Voltage
Bias Current vs Common-Mode Voltage Over Temperature
Output Positive Swing vs Supply Voltage (RL= 600 Ω)
Output Negative Swing vs Supply Voltage (RL= 600 Ω)
Sourcing Current vs Output Voltage (VCC =2.7V)
Sourcing Current vs Output Voltage (VCC =5V)
Sinking Current vs Output Voltage (VCC =2.7V)
Sinking Current vs Output Voltage (VCC =5V)
PSRR vs Frequency (VCC =2.7V)
PSRR vs Frequency (VCC =5V)
CMRR vs Frequency (VCC =2.7V)
CMRR vs Frequency (VCC =5V)
Open-Loop Frequency Response vs RL(VCC±=2.7V)
Open-Loop Frequency Response vs RL(VCC±=5V)
Open-Loop Frequency Response vs CL(VCC±=2.7V)
Open-Loop Frequency Response vs CL(VCC±=5V)
Voltage Noise vs Frequency (VCC =2.7V)
Voltage Noise vs Frequency (VCC =5V)
Non-Inverting Large Signal Pulse Response (VCC =2.7V)
Non-Inverting Large Signal Pulse Response (VCC =5V)
Non-Inverting Small Signal Pulse Response (VCC =2.7V)
Non-Inverting Small Signal Pulse Response (VCC =5V)
Inverting Large Signal Pulse Response (VCC =2.7V)
Inverting Large Signal Pulse Response (VCC =5V)
Inverting Small Signal Pulse Response (VCC =2.7V)
Inverting Small Signal Pulse Response (VCC =5V)
Turn-On Response Time (VCC =5V)
Input Common-Mode Capacitance vs Common-Mode Voltage (VCC =5V)
8
PACKAGE OPTION ADDENDUM
www.ti.com 29-Jun-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
LMV712IDGSR NRND MSOP DGS 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
LMV712IDGSRG4 NRND MSOP DGS 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
LMV712IDGST NRND MSOP DGS 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
LMV712IDGSTG4 NRND MSOP DGS 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LMV712IDGSR MSOP DGS 10 2500 330.0 12.4 5.3 3.3 1.3 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Nov-2010
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LMV712IDGSR MSOP DGS 10 2500 370.0 355.0 55.0
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Nov-2010
Pack Materials-Page 2
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
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BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
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