2SA854S Transistors Medium Power Transistor (-32V, -0.5A) 2SA854S zExternal dimensions (Unit : mm) zFeatures 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Idea for low-voltage operation. 3) Complements the 2SC1741S. 2SA854S 4 0.2 (15Min.) 3Min. 3 0.2 2 0.2 zStructure Epitaxial planar type PNP silicon transistor + 0.15 0.45- 0.05 + 0.4 2.5- 0.1 0.5 0.15 0.45+ - 0.05 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Denotes hFE zAbsolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -0.5 A Collector power dissipation PC 0.3 W Parameter Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C PC MAX. must not be exceeded. Rev.A 1/3 2SA854S Transistors zElectrical characteristics (Ta=25C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO -40 - - V IC=-100A Collector-emitter breakdown voltage BVCEO -32 - - V IC=-1mA Emitter-base breakdown voltage BVEBO -5 - - V IE=-100A ICBO - - -1 A VCB=-20V Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Unit Conditions IEBO - - -1 A VEB=-4V VCE (sat) - - -0.6 V IC/IB=-500mA/-50mA hFE 120 - 390 - Transition frequency fT - 200 - MHz Output capacitance Cob - 8 - pF DC current transfer ratio VCE=-3V, IC=-100mA VCE=-5V, IE=20mA, f=100MHz VCB=-10V, IE=0A, f=1MHz zPackaging specifications and hFE Taping Package Type hFE 2SA854S QR Code T146 Basic ordering unit (pieces) 3000 - hFE values are classified as follows : Item Q R hFE 120~270 180~390 zElectrical characteristic curves VCE=-3V -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation -100 -500 -0.9mA Ta=25C -1mA -0.8mA -80 -0.7mA -0.6mA -60 -0.5mA -0.4mA -40 -0.3mA -0.2mA -20 -0.1mA 0 IB=0A 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( ) COLLECTOR CURRENT : IC (mA) -200 Ta=100 C 25 C -100 -55 C -50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -500 Ta=25C -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -400 -300 -2.0mA -200 -1.5mA -1.0mA -100 0 -0.5mA IB=0A 0 -5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics () Rev.A 2/3 2SA854S 200 100 50 500 Ta=100C 200 25C -55C 100 50 20 -5 -10 -20 -50 -100 -200 -500 -1000 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current () -1.0 lC/lB=10 -0.5 -0.3 -0.2 -0.1 Ta=100C 25C -0.05 -55C -0.03 -0.02 -0.01 -1 VCE=-3V -2 -5 -10 -20 -50 -100 -200 -500 -1000 500 200 100 50 2 5 10 20 -0.2 -0.1 IC/IB=50 -0.05 20 10 -0.02 -1 -2 -5 -10 -20 -50 -100 -200 -500 Fig.6 Collector-emitter saturation voltage vs. collector current () 1000 1 -0.5 COLLECTOR CURRENT : IC (mA) Ta=25C VCE=-5V 0.5 Ta=25C -1 50 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current () Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=-5V -3V -1V -1 -2 1000 DC CURRENT GAIN : hFE 500 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25C TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Ta=25C f=1MHz IE=0A IC=0A 100 50 20 10 5 2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage. Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1