Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Rectifier diode
1SR154-400
Applications Land size figure (Unit : mm)
General rectification
Features
1)Small power mold type(PMDS)
2)High Reliability
Construction
Silicon diffused junction Structure
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRMS V
VRV
Io A
IFSM A
Tj C
Tstg C
Electrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 1.1 V IF=1A
Reverse current IR- - 10 uA VR=400V
Storage temperature 55 to 150
Parameter
Dimensions (Unit : mm)
Forward current surge peak （60Hz/1cyc）30
Junction temperature 150
Reverse voltage (repetitive peak) 400
Average rectified forward current 1
Taping dimensions (Unit : mm)
Parameter Limits
Reverse voltage (non-repetitive peak) 500
PMDS
2.0
4.2
2.
0
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
　 0.05
2.8MAX
ROHM : PMDS
JEDEC : SOD-106
①
Manufacture Date
②
0.1±0.02
    0.1
2.0±0.2
5.0±0.2
2.6±0.15
4.5±0.2
1.5±0.2
1
4
①
②
ROHM : PMDS
JEDEC : SOD-106
①
Manufacture Date
②
0.1±0.02
    0.1
2.0±0.2
5.0±0.3
2.6±0.2
4.5±0.2
1.5±0.2
1
4
①
②
1/3 2011.06 - Rev.E
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SR154-400 　
Electrical characteristic curves (Ta=25C)
0
0.5
1
1.5
2
2.5
3
AVE:1.597us
Ta=25℃
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
0
50
100
150
AVE:64.0A
0
10
20
30
40
50
60
70
80
90
100
AVE:25.8pF
Ta=25℃
f=1MHz
V
R
=0V
n=10pcs
0
50
100
150
200
250
300
350
400
450
500
920
930
940
950
960
970
0.1
1
10
100
1000
10000
100000
0 100 200 300 400
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
0.001
0.01
0.1
1
0 200 400 600 800 1000 1200
Ta=-25℃
Ta=150℃
Ta=75℃
Ta=25℃
Ta=125℃
0
50
100
1 10 100
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
I
M
=10mA I
F
=0.5A
300us
time
Mounted on epoxy board
0
50
100
1 10 100
t
Ifsm
1
10
100
0 5 10 15 20 25 30
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(A)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(us)
f=1MHz
Ta=25℃
V
R
=400V
n=30pcs
AVE:28.27nA
AVE:932.2mV
Ta=25℃
I
F
=1A
n=30pcs
8.3ms
Ifsm 1cyc
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
012
Sin(θ＝180)
D=1/2
DC
2/3 2011.06 - Rev.E
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
1SR154-400 　
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
Sin(θ＝180)
D=1/2
DC TTj=150℃
D=t/T
tV
R
Io
V
R
=200V
0A
0V
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
Sin(θ＝180)
D=1/2
DC
TTj=150
℃
D=t/T
tV
R
Io
V
R
=200V
0A
0V
0
0.002
0.004
0.006
0.008
0.01
0 100 200 300 400
D=1/2
DC
Sin(θ＝180)
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)"
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)"
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0
5
10
15
20
25
30
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:5.00kV
AVE:18.6V
3/3 2011.06 - Rev.E
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes