2N7002 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2 of 6
www.unisonic.com.tw QW-R206-037,K
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V
Gate Source Voltage Continuous VGSS ±20 V
Non Repetitive(tP<50μs) ±40
Drain Current Continuous ID 300 mA
Pulsed 800
Power Dissipation PD 200 mW
Derated Above 25°C 1.6 mW/°C
Junction Temperature TJ + 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 625 °C/W
Junction to Case θJC 215 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V, ID=10μA 60 V
Drain-Source Leakage Current IDSS V
DS=60V, VGS =0V 1 μA
Gate-Source Leakage Current IGSSF V
GS =20V, VDS=0V 100 nA
IGSSR V
GS =-20V, VDS=0V -100 nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage VGS(TH) V
GS = VDS, ID=250μA 1 2.1 2.5 V
Drain-Source On-Voltage VDS (ON) VGS = 10V, ID=300mA 0.6 3.75 V
VGS = 5.0V, ID=50mA 0.09 1.5
Static Drain-Source On-Resistance RDS (ON) VGS =10V, ID=300mA 7.5 Ω
VGS =5.0V, ID=50mA 7.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS V
DS=25V,VGS=0V,f=1.0MHz 20 50 pF
Output Capacitance COSS 11 25 pF
Reverse Transfer Capacitance CRSS 4 5 pF
Turn-On Time tON VDD=30V, RL=150Ω, ID=200mA,
VGS =10V, RGEN =25Ω 20 nS
Turn-Off Time tOFF VDD=30V, RL=25Ω, ID=200mA,
VGS=10V, RGEN =25Ω 20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD V
GS=0V, Is=300mA (Note) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current ISM 0.8 A
Maximum Continuous Drain-Source
Diode Forward Current IS 300 mA
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%