SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
1
FEATURES
• Access times of 15, 17, 20, 25, 35, and 45 ns
• Built in decoupling caps for low noise operation
• Organized as 128K x32; User confi gured as
256Kx16 or 512K x8
• Operation with single 5 volt supply
• Low power CMOS
• TTL Compatible Inputs and Outputs
• 2V Data Retention, Low power standby
OPTIONS MARKINGS
• Timing
15ns -15
17ns -17
20ns -20
25ns -25
35ns -35
45ns -45
• Package
Ceramic Quad Flatpack Q No. 702
Ceramic Quad Flatpack Q1
Pin Grid Array -8 Series P No. 802
Pin Grid Array -8 Series PN No. 802
NOTE: PN indicates a no connect on pins 8, 21, 28, 39
GENERAL DESCRIPTION
The AS8S128K32 is a 4 Megabit CMOS SRAM Module
organized as 128Kx32-bits and user confi gurable to 256Kx16
or 512Kx8. The AS8S128K32 achieves high speed access, low
power consumption and high reliability by employing advanced
CMOS memory technology.
The military temperature grade product is suited for military
applications.
The AS8S128K32 is offered in a ceramic quad fl atpack
module per SMD-5962-95595 with a maximum height of 0.140
inches. This module makes use of a low profi le, mutlichip mod-
ule design.
This device is also offered in a 1.075 inch square ceramic pin
grid array per SMD 5692-93187, which has a maximum height
of 0.195 inches. This package is also a low profi le, multi-chip
module design reducing height requirements to a minimum.
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-95595: -Q
• SMD 5962-93187: -P or -PN
• MIL-STD-883
128K x 32 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.micross.com
M3
M2
M1
I/O 0 - I/O 7
I/O 16 - I/O 23
I/O 24 - I/O 31
I/O 8 - I/O 23
WE2
A0 - 16
OE
WE1
CE1
CE2
CE3
CE4
WE3
WE4
M0
128K x 8
128K x 8
128K x 8
128K x 8
PIN ASSIGNMENT
(Top View)
66 Lead PGA- Pins 8, 21, 28, 39 are no connects (PN)
66 Lead PGA- Pins 8, 21, 28, 39 are grounds (P)
68 Lead CQFP (Q & Q1)
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
2
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss................-1V to +7V
Storage Temperature...................................-65°C to +150°C
Short Circuit Output Current(per I/O).........................20mA
Voltage on Any Pin Relative to Vss..............-.5V to Vcc+1V
Maximum Junction Temperature**...........................+175°C
*Stresses greater than those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device.
This is a stress rating only and functional operation on the device
at these or any other conditions above those indicated in the op-
erational sections of this specifi cation is not implied. Exposure
to absolute maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airfl ow. See the Application Infor-
mation section at the end of this datasheet for more information.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55°C<TA<125°C; Vcc = 5v ±10%)
μΑ
μΑ
μΑ
CONDITIONS SYM -15 -17 -20 -25 -35 -45 UNITS NOTES
CE\<V
IL
; V
CC
=MAX
f = MAX = 1/t
RC
(MIN)
Outputs Open I
cc
700 650 600 560 520 500 mA 3, 13
(1)
CE\>V
IH
; V
CC
=MAX
f = MAX = 1/t
RC
(MIN)
Outputs Open I
SBT1
280 220 200 180 160 150 mA (1)
CE\ = OE\ = V
IH
;
CMOS Compatible; V
CC
= MAX
f = 5 MHz I
SBT2
100 80 80 60 60 60 mA (1)
CE\ > V
cc
-0.2V; Vcc = MAX
V
IL
< V
ss
+0.2V;
V
IH
> V
CC
-0.2V; f = 0 Hz I
SBC1
40 40 40 40 40 40 mA (2)
CE\ > Vcc -0.2V; Vcc = MAX
V
IL
< Vss +0.2V;
V
IH
> Vcc -0.2V; f = 0 Hz
"L" Version Only
I
SBC2
24 24 24 24 24 24 mA (2)
MAX
Power Supply Current:
Operating
PARAMETER
Power Supply Current:
Standby
NOTE: 1) Address switching sequence A, A+1, A+2, etc.
2) 1/2 input at HIGH, 1/2 input at LOW.
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
3
AC TEST CONDITIONS
TEST SPECIFICATIONS
Input pulse levels........................................VSS to 3V
Input rise and fall times..........................................5ns
Input timing reference levels.................................1.5V
Output reference levels........................................1.5V
Output load.............................................See Figures 1
NOTES:
Vz is programable from -2V to + 7V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
SYMBOL PARAMETER MAX UNITS NOTES
CADD A0 - A18 Capacitance 40 pF 4
COE OE\ Capacitance 40 pF 4
CWE, CCE WE\ and CE\ Capacitance 20 pF 4
CIO I/O 0- I/O 31 Capacitance 20 pF 4
Figure 1
CAPACITANCE TABLE (VIN = 0V, f = 1 MHz, T
A = 25oC)
OH
OL
I
I
Current Source
Current Source
Vz = 1.5V
(Bipolar
Supply)
Device
Under
Test
Ceff = 50pf
-+
+
TRUTH TABLE
MODE OE\ CE\ WE\ I/O POWER
Read L L H Q ACTIVE
Write X L L D ACTIVE
Standby X H X HIGH Z STANDBY
Not Selected H L H HIGH Z ACTIVE
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55°C≤TA≤125°C; Vcc = 5v ±10%)
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
READ CYCLE
READ cycle time tRC 15 17 20 25 35 45 ns
Address access time tAA 15 17 20 25 35 45 ns
Chip enable access time tACE 15 17 20 25 35 45 ns
Output hold from address change tOH 22 2 2 2 2 ns
Chip enable to output in Low-Z tLZCE 2 2 2 2 2 2 ns 4, 6, 7
Chip disable to output in High-Z tHZCE 7 8 9 10 14 15 ns 4, 6, 7
Chip enable to power-up time tPU 00 0 0 0 0 4
Chip disable to power-down time tPD 15 17 20 25 35 45 4
Output enable access time tAOE 6 7 7 8 12 12 ns
Output enable to output in Low-Z tLZOE 00 0 0 0 0 ns4, 6
Output disable to output in High-Z tHZOE 6 7 7 9 12 12 ns 4, 6, 7
WRITE CYCLE
WRITE cycle time tWC 15 17 20 25 35 45 ns
Chip enable to end of write tCW 12 12 15 17 20 22 ns
Address valid to end of write tAW 12 12 15 17 20 22 ns
Address setup time tAS 00 0 0 0 0 ns
Address hold from end of write tAH 11 1 1 1 1 ns
WRITE pulse width tWP1 12 112 115 17 20 20 ns
WRITE pulse width tWP2 12 112 115 17 20 20 ns
Data setup time tDS 8 9 10 12 15 15 ns
Data hold time tDH 11 1 1 1 1 ns
Write disable to output in Low-z tLZWE 2 2 2 2 2 2 ns 4, 6, 7
Write enable to output in High-Z tHZWE 7 9 10 11 14 15 ns 4, 6, 7
-35 -45
DESCRIPTION -20 -25-17-15
NOTES:
1) For OE\ = HIGH condition. For OE\ = LOW condition tWP1 = tWP2 = 15 ns MIN.
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
5
7. At any given temperature and voltage condition,
tHZCE, is less than tLZCE, and tHZWE is less than tLZWE.
8. ?W/E is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. tRC= READ cycle time.
12. Chip enable (?C/E) and write enable (?W/E) can initiate
and terminate a WRITE cycle.
13. 32 bit operation
NOTES
1. All voltages referenced to VSS (GND).
2. -3v for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specifi ed value applies with the outputs
4. This parameter is sampled.
5. Test conditions as specifi ed with output loading as
shown in Fig. 1 unless otherwise noted.
6. tHZCE, tHZOE and tHZWE are specifi ed with CL= 5pF
as in Fig. 2. Transition is measured +/- 200 mV
typical from steady state coltage, allowing for actual
tester RC time constant.
open, and f= HZ.
tRC(MIN)
1
LOW VCC DATA RETENTION WAVEFORM
DA TA RETENTION ELECTRICAL CHARACTERISTICS
DESCRIPTION SYMBOL MIN MAX UNITS NOTES
V
CC
for Retention Data V
DR
2--V
CE\ > V
CC
- 0.2V V
CC
= 2.0V I
CCDR
-- 6 mA
V
IN
> V
CC
- 0.2V V
CC
= 3V I
CCDR
-- 11.6 mA
Chip Deselect to Data
Retention Time t
CDR
0--ns4
Operation Recovery Time t
R
t
RC
ns 4, 11
Data Retention Current
CONDITIONS
tRtCDR
DATA RETENTION MODEDATA RETENTION MODE
VDR
VDR
Vcc
CE\
4.5V 4.5V
>2V
VIH
VIL
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
6
READ CYCLE NO. 2(7,8,10)
READ CYCLE NO. 1(8,9)
tAA
tOH
tRCtRC
PREVIOUS DATA VALID
VALID
DATA VALID
ADDRESS
DQ
tPD
tPU
tHZCEtACE
tLZCE
tHZOE
tLZOE
tAOE
tRCtRC
DATA VALID
CE\
OE\
DQ
Icc
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
7
WRITE CYCLE NO . 1
(Chip Enable Controlled)
WRITE CYCLE NO . 2
(Write Enable Controlled)
tDHtDS
tWP1tWP1
tAH
tCW
tAW
tCWtAS
tWCtWC
HIGH Z
DATA VAILD
ADDRESS
CE\
WE\
D
Q
tLZWE
tHZWE
tDHtDS
tWP2tWP2tAS
tCW tAH
tAW
tCW
tWCtWC
DATA VALID
ADDRESS VALID
ADDRESS
CE\
WE\
D
Q
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
8
MECHANICAL DEFINITIONS*
Micross Case #702 (Package Designator Q)
SMD 5962-95595, Case Outline M
*All measurements are in inches.
MIN MAX
A 0.123 0.200
A1 0.118 0.186
A2 0.005 0.015
B
b 0.013 0.017
D
D1 0.870 0.890
D2 0.980 1.000
E 0.936 0.956
e
R
L1 0.035 0.045
0.505 BSC
0.010 TYP
MICROSS SPECIFICATIONS
SYMBOL
0.010 REF
0.800 BSC
A
A2
SEE DETAIL A
E3
DETAIL A
L1
1o - 7o
R
B
D2
D1
D
b
e
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
9
MECHANICAL DEFINITIONS*
Micross Case (Package Designator Q1)
SMD 5962-95595, Case Outline A
*All measurements are in inches.
MIN MAX
A--- 0.200
A1 0.054 ---
b0.013 0.017
B
c0.0090.012
D/E 0.980 1.000
D1/E1 0.870 0.890
D2/E2
e
L0.035 0.045
R
SYMBOL
SMD SPECIFICATIONS
0.010 TYP
0.010 TYP
0.800 BSC
0.050 BSC
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
10
MECHANICAL DEFINITIONS*
*All measurements are in inches.
Micross Case #802 (Package Designator P & PN)
SMD 5962-93187, Case Outline 4 and 5
A
A1
L
φb
e
φb1
4 x D
D1
D2
E1
Pin 66 ePin 11
Pin 1
(identifi ed by
0.060 square pad)
Pin 56
φb2
MIN MAX
A 0.135 0.195
A1 0.025 0.035
φ
b0.016 0.020
φ
b1 0.045 0.055
φ
b2 0.065 0.075
D 1.064 1.086
D1/E1
D2
e
L 0.145 0.155
0.600 BSC
0.100 BSC
SYMBOL
1.000 BSC
SMD SPECIFICATIONS
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
11
ORDERING INFORMATION
*AVAILABLE PROCESSES
IT = Industrial Temperature Range -40oC to +85oC
XT = Extended Temperature Range -55oC to +125oC
883C = Full Military Processing -55oC to +125oC
PACKAGE NOTES
P = Pins 8, 21, 28, and 39 are grounds.
PN = Pins 8, 21, 28, and 39 are no connects.
Device Number Package
Type
Speed
ns Process Device Number Package
Type
Speed
ns Process
AS8S128K32 Q -15 /* AS8S128K32 Q1 -15 /*
AS8S128K32 Q -17 /* AS8S128K32 Q1 -17 /*
AS8S128K32 Q -20 /* AS8S128K32 Q1 -20 /*
AS8S128K32 Q -25 /* AS8S128K32 Q1 -25 /*
AS8S128K32 Q -35 /* AS8S128K32 Q1 -35 /*
AS8S128K32 Q -45 /* AS8S128K32 Q1 -45 /*
Device Number Package
Type
Speed
ns Process
AS8S128K32
AS8S128K32
P
PN
-15
-15
/*
/*
AS8S128K32
AS8S128K32
P
PN
-17
-17
/*
/*
AS8S128K32
AS8S128K32
P
PN
-20
-20
/*
/*
AS8S128K32
AS8S128K32
P
PN
-25
-25
/*
/*
AS8S128K32
AS8S128K32
P
PN
-35
-35
/*
/*
AS8S128K32
AS8S128K32
P
PN
-45
-45
/*
/*
EXAMPLE: AS8S128K32Q-25/XT
EXAMPLE: AS8S128K32PN-20/883C
EXAMPLE: AS8S128K32Q1-15/IT
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
12
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE
Micross Package Designator Q
Micross Part # SMD Part #
AS8S128K32Q-55/883C 5962-9559505HMA
AS8S128K32Q-55/883C 5962-9559505HMC
AS8S128K32Q-45/883C 5962-9559506HMA
AS8S128K32Q-45/883C 5962-9559506HMC
AS8S128K32Q-35/883C 5962-9559507HMA
AS8S128K32Q-35/883C 5962-9559507HMC
AS8S128K32Q-25/883C 5962-9559508HMA
AS8S128K32Q-25/883C 5962-9559508HMC
AS8S128K32Q-20/883C 5962-9559509HMA
AS8S128K32Q-20/883C 5962-9559509HMC
AS8S128K32Q-17/883C 5962-9559510HMA
AS8S128K32Q-17/883C 5962-9559510HMC
Micross Part # SMD Part #
AS8S128K32Q-55/883C 5962-9559512HMA
AS8S128K32Q-55/883C 5962-9559512HMC
AS8S128K32Q-45/883C 5962-9559513HMA
AS8S128K32Q-45/883C 5962-9559513HMC
AS8S128K32Q-35/883C 5962-9559514HMA
AS8S128K32Q-35/883C 5962-9559514HMC
AS8S128K32Q-25/883C 5962-9559515HMA
AS8S128K32Q-25/883C 5962-9559515HMC
AS8S128K32Q-20/883C 5962-9559516HMA
AS8S128K32Q-20/883C 5962-9559516HMC
AS8S128K32Q-17/883C 5962-9559517HMA
AS8S128K32Q-17/883C 5962-9559517HMC
Please note, -15 not currently available on the SMD's.
Micross Package Designator Q1
Micross Part # SMD Part #
AS8S128K32Q1-55/883C 5962-9559505HAA
AS8S128K32Q1-55/883C 5962-9559505HAC
AS8S128K32Q1-45/883C 5962-9559506HAA
AS8S128K32Q1-45/883C 5962-9559506HAC
AS8S128K32Q1-35/883C 5962-9559507HAA
AS8S128K32Q1-35/883C 5962-9559507HAC
AS8S128K32Q1-25/883C 5962-9559508HAA
AS8S128K32Q1-25/883C 5962-9559508HAC
AS8S128K32Q1-20/883C 5962-9559509HAA
AS8S128K32Q1-20/883C 5962-9559509HAC
AS8S128K32Q1-17/883C 5962-9559510HAA
AS8S128K32Q1-17/883C 5962-9559510HAC
Micross Part # SMD Part #
AS8S128K32Q1-55/883C 5962-9559512HAA
AS8S128K32Q1-55/883C 5962-9559512HAC
AS8S128K32Q1-45/883C 5962-9559513HAA
AS8S128K32Q1-45/883C 5962-9559513HAC
AS8S128K32Q1-35/883C 5962-9559514HAA
AS8S128K32Q1-35/883C 5962-9559514HAC
AS8S128K32Q1-25/883C 5962-9559515HAA
AS8S128K32Q1-25/883C 5962-9559515HAC
AS8S128K32Q1-20/883C 5962-9559516HAA
AS8S128K32Q1-20/883C 5962-9559516HAC
AS8S128K32Q1-17/883C 5962-9559517HAA
AS8S128K32Q1-17/883C 5962-9559517HAC
Micross Package Designator P & PN
Micross Part # SMD Part #
AS8S128K32P-55/883C 5962-9318705H5A
AS8S128K32P-55/883C 5962-9318705H5C
AS8S128K32P-45/883C 5962-9318706H5A
AS8S128K32P-45/883C 5962-9318706H5C
AS8S128K32P-35/883C 5962-9318707H5A
AS8S128K32P-35/883C 5962-9318707H5C
AS8S128K32P-25/883C 5962-9318708H5A
AS8S128K32P-25/883C 5962-9318708H5C
AS8S128K32P-20/883C 5962-9318709H5A
AS8S128K32P-20/883C 5962-9318709H5C
AS8S128K32P-17/883C 5962-9318710H5A
AS8S128K32P-17/883C 5962-9318710H5C
Micross Part # SMD Part #
AS8S128K32PN-55/883C 5962-9318705H4A
AS8S128K32PN-55/883C 5962-9318705H4C
AS8S128K32PN-45/883C 5962-9318706H4A
AS8S128K32PN-45/883C 5962-9318706H4C
AS8S128K32PN-35/883C 5962-9318707H4A
AS8S128K32PN-35/883C 5962-9318707H4C
AS8S128K32PN-25/883C 5962-9318708H4A
AS8S128K32PN-25/883C 5962-9318708H4C
AS8S128K32PN-20/883C 5962-9318709H4A
AS8S128K32PN-20/883C 5962-9318709H4C
AS8S128K32PN-17/883C 5962-9318710H4A
AS8S128K32PN-17/883C 5962-9318710H4C
SRAM
AS8S128K32
AS8S128K32
Rev. 4.3 01/10
Micross Components reserves the right to change products or specifi cations without notice.
13
DOCUMENT TITLE
128K x 32 SRAM, SRAM MEMORY ARRAY
REVISION HISTORY
Rev # History Release Date Status
4.2 Updated iCCDR(2V) limit from 6mA to 8mA June 2008 Release
4.3 Added Micross Information January 2010 Release
