2N6487
2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
■STMicroelectronicsPREFERRED
SALESTYPES
■COMPLEMENTARYPNP - NPN DEVICES
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plasticpackage.
They are inteded for use in power linear and low
frequencyswitching applications.
The 2N6487 complementary type is 2N6490.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N6487 2N6488
PNP 2N6490
VCBO Collector-Base Voltage (IE=0) 70 90 V
V
CEX Collector-Emitter Voltage (VBE=-1.5V,RBE=100Ω)70 90 V
VCEO Collector-Emitter Voltage (IB=0) 60 80 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 15 A
IBBase Current 5 A
Ptot Total Dissipation at Tc≤25 oC75 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 1.67
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE =-1.5V) for 2N6487/2N6490 VCE =65V
for 2N6488 VCE =85V
T
c=150o
C
for 2N6487/2N6490 VCE =60V
for 2N6488 VCE =80V
0.5
0.5
5
5
mA
mA
mA
mA
ICER Collector Cut-off
Current (RBE =100Ω)for 2N6487/2N6490 VCE =55V
for 2N6488 VCE =75V 0.5
0.5 mA
mA
ICEO Collector Cut-off
Current (IB=0) for 2N6487/2N6490 VCE =30V
for 2N6488 VCE =40V 1
1mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage IC=200mA
for 2N6487/2N6490
for 2N6488 60
80 V
V
VCER(sus)∗Collector-Emitter
Sustaining Voltage
(RBE =100Ω)
I
C=200mA
for 2N6487/2N6490
for 2N6488 65
85 V
V
VCEX(sus)∗Collector-Emitter
Sustaining Voltage
(VBE=-1.5V, RBE=100Ω)
IC=200mA
for 2N6487/2N6490
for 2N6488 70
90 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=5A I
B=0.5A
I
C=15A I
B=5A 1.3
3.5 V
V
VBE∗Base-Emitter Voltage IC=5A V
CE =4V
I
C=15A V
CE =4V 1.3
3.5 V
V
hFE∗DC Current Gain IC=5A V
CE =4V
I
C=15A V
CE =4V 20
5150
hfe Small Signal Current
Gain IC=1A V
CE =4V f=1MHz
I
C=1A V
CE =4V f=1KHz 5
25
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
For PNP types voltage and current values are negative.
2N6487 / 2N6488/ 2N6490
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
2N6487/ 2N6488/ 2N6490
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2N6487 / 2N6488 / 2N6490
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