DATA SH EET
Product data sheet
Supersedes data of 2000 Apr 11 2003 Mar 18
DISCRETE SEMICONDUCTORS
MMBT3906
PNP switching transistor
db
ook, halfpage
M3D088
2003 Mar 18 2
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
FEATURES
•Collector current capability IC = −200 mA
•Collector-emitter voltage VCEO = −40 V.
APPLICATIONS
•General switching and amp lification .
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER MARKING CODE(1)
MMBT3906 7B∗
PINNING
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23 ) and symbo l .
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage −40 V
ICcollector current (DC) −200 mA
LIMITING VALUES
In accordance with the A bsolute Maximum Rating Syst em (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −40 V
VCEO collector-emitter voltage open base − −40 V
VEBO emitter-bas e voltage open collector − −6 V
ICcollector current (DC) − −200 mA
ICM peak collector current − −200 mA
IBM peak base current − −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2003 Mar 18 3
NXP Semiconductors Pr oduct data shee t
PNP switching transistor MMBT3906
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA
IEBO emitter cu t-off current IC = 0; VEB = −6 V − −50 nA
hFE DC current gain VCE = −1 V; see Fig.2
IC = −0.1 mA 60 −
IC = −1 mA 80 −
IC = −10 mA 100 300
IC = −50 mA 60 −
IC = −100 mA 30 −
VCEsat collector-emitter saturation
voltage IC = −10 mA; IB = −1 mA − −250 mV
IC = −50 mA; IB = −5 mA − −400 mV
VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV
IC = −50 mA; IB = −5 mA − −950 mV
Cccollector capacitan ce IE = ie = 0; VCB = −5 V; f = 1 MHz −4.5 pF
Ceemitter capacitance IC = ic = 0; VEB = −500 mV;
f = 1 MHz −10 pF
fTtransition frequency IC = −10 mA; VCE = −20 V;
f = 100 MHz 250 −MHz
Fnoise figure IC = −100 µA; VCE = −5 V;
RS = 1 kΩ; f = 10 Hz to 15.7 kHz −4dB
Switching times (between 10% and 90% levels); see Fig.7
tddelay time ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA −35 ns
trrise time −35 ns
tsstorage time −225 ns
tffall time −75 ns
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NXP Semiconductors Pr oduct data shee t
PNP switching transistor MMBT3906
handbook, halfpage
0
400
600
200
MHC459
−10−1−1−10 IC (mA)
hFE
−102−103
(1)
(3)
(2)
Fig.2 DC current gain; typical values.
VCE = −1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0−10
−250
0
−50
−100
−150
−200
−2VCE (V)
IC
(mA)
−4−6−8
MHC460
(1)
(2)(3)
(9)
(7)
(10)
(8)
(6)
(5)
(4)
Fig.3 Collector current as a function of
collector-emitter voltag e.
(1) IB = −1.5 mA.
(2) IB = −1.35 mA.
(3) IB = −1.2 mA.
(4) IB = −1.05 mA.
(5) IB = −0.9 mA.
(6) IB = −0.75 mA.
(7) IB = −0.6 mA.
(8) IB = −0.45 mA.
(9) IB = −0.3 mA.
(10) IB = −0.15 mA.
Tamb = 25 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MHC461
−1−10−1IC (mA)
VBE
(mV)
−10 −102−103
(3)
(2)
(1)
Fig.4 Base-emitte r v oltage as a function of
collector current.
VCE = −1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MHC462
−1−10−1IC (mA)
VBEsat
(mV)
−10 −102−103
(1)
(3)
(2)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
2003 Mar 18 5
NXP Semiconductors Pr oduct data shee t
PNP switching transistor MMBT3906
handbook, halfpage
−103
−102
−10
MHC463
−10−1−1−10 IC (mA)
VCEsat
(mV)
−102−103
(1)
(2)
(3)
Fig.6 Collector-emitter satur ation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = 25 °C.
(2) Tamb = 150 °C.
(3) Tamb = −55 °C.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Fig.7 Test circuit for switching times.
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope: input impedance Zi = 50 Ω.
2003 Mar 18 6
NXP Semiconductors Pr oduct data shee t
PNP switching transistor MMBT3906
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Mar 18 7
NXP Semiconductors Pr oduct data shee t
PNP switching transistor MMBT3906
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or co mpleting a design.
2. The product s ta tus of device(s) de scribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such informatio n.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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of an NXP Semiconductors product can reason ably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, an d as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/02/pp8 Date of r el eas e : 2003 Mar 18 Document order number: 9397 750 10243
