BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 ) E T E L O S B O BD245B Collector-emitter voltage (IC = 30 mA) VCER 70 90 BD245C 115 BD245 45 BD245A BD245B UNIT 55 BD245 BD245A VALUE V CEO BD245C 60 80 V V 100 VEBO 5 V IC 10 A ICM 15 A IB 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3 W 1/2LIC2 62.5 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 250 C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.64 W/C. Derate linearly to 150C free air temperature at the rate of 24 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD245 45 BD245A 60 BD245B 80 BD245C 100 TYP MAX V VCE = 55 V VBE = 0 BD245 0.4 Collector-emitter VCE = 70 V VBE = 0 BD245A 0.4 cut-off current VCE = 90 V VBE = 0 BD245B 0.4 VCE = 115 V VBE = 0 BD245C 0.4 Collector cut-off VCE = 30 V IB = 0 BD245/245A 0.7 current VCE = 60 V IB = 0 BD245B/245C 0.7 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio 1 VCE = 4V IC = 1A VCE = 4V IC = 3A VCE = 4V IC = 10 A Collector-emitter IB = 0.3 A IC = saturation voltage IB = 2.5 A IC = 10 A Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio UNIT mA mA mA 40 (see Notes 5 and 6) 20 4 3A 1 (see Notes 5 and 6) E T E L O S B O VCE = 4V IC = VCE = 4V IC = 10 A VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 3A V 4 1.6 (see Notes 5 and 6) 3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 1.56 C/W 42 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn-off time VBE(off) = -3.7 V RL = 20 tp = 20 s, dc 2% 0.3 s 1 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS633AG VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 10 TCS633AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = IC = IC = IC = 1*0 0*1 E T E L O S B O 1*0 0*1 1*0 0*01 0*01 10 1A 3A 6A 10 A IC - Collector Current - A 0*1 1*0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*8 TCS633AC VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25C 1*6 1*4 1*2 1*0 0*8 0*6 0*1 1 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS633AC t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 BD245 BD245A BD245B BD245C E T E L O S B O 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.