Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial applications. 10--500 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs Typical Pulse Performance at 450 MHz: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 20 dB Drain Efficiency -- 64% Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 W Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. NI--1230H--4S MMRF1006HR5 NI--1230S--4S MMRF1006HSR5 PARTS ARE PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C TJ 225 C PD 1333 W Operating Junction Temperature (1) Total Device Dissipation @ TC = 25C, CW only (2) 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation. Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1006HR5 MMRF1006HSR5 1 Table 2. Thermal Characteristics Symbol Value (1) Unit Thermal Impedance, Junction to Case Pulse: Case Temperature 80C, 1000 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 450 MHz (2) ZJC 0.03 C/W Thermal Resistance, Junction to Case CW: Case Temperature 84C, 1000 W CW, 352.2 MHz RJC 0.15 C/W Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2000 V Machine Model (per EIA/JESD22--A115) A, passes 125 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit IGSS -- -- 10 Adc V(BR)DSS 110 -- -- Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS -- -- 100 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS -- -- 5 mA Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1600 Adc) VGS(th) 1 1.68 3 Vdc Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3.5 Vdc Drain--Source On--Voltage (3) (VGS = 10 Vdc, ID = 4 Adc) VDS(on) -- 0.28 -- Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 3.3 -- pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 147 -- pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 506 -- pF Characteristic Off Characteristics (3) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics (3) Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 19 20 22 dB Drain Efficiency D 60 64 -- % Input Return Loss IRL -- --18 --9 dB 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 2. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions. 3. Each side of device measured separately. 4. Measurement made with device in push--pull configuration. (continued) MMRF1006HR5 MMRF1006HSR5 2 RF Device Data Freescale Semiconductor, Inc. B1 VBIAS + C2 C1 C3 L3 C4 L1 COAX1 Z2 Z4 Z6 C26 C27 C28 + C29 C30 Z14 Z8 RF INPUT Z1 C25 Z12 Z16 VSUPPLY + COAX3 Z18 Z20 C22 Z22 C23 Z10 RF Z24 OUTPUT C5 C7 Z3 C8 Z5 C9 Z7 DUT C10 Z11 C6 Z13 C15 C16 C17 C18 Z17 Z19 Z21 Z23 C19 Z9 C24 C21 Z15 COAX2 COAX4 C20 L2 L4 VBIAS B2 + C11 Z1 Z2*, Z3* Z4*, Z5* Z6, Z7 Z8*, Z9* Z10, Z11 Z12, Z13 C12 C13 C31 C14 0.366 x 0.082 Microstrip 0.170 x 0.100 Microstrip 0.220 x 0.451 Microstrip 0.117 x 0.726 Microstrip 0.792 x 0.058 Microstrip 0.316 x 0.726 Microstrip 0.262 x 0.507 Microstrip Z14*, Z15* Z16, Z17 Z18, Z19 Z20, Z21, Z22, Z23 Z24 PCB C32 C33 C34 + + C35 C36 VSUPPLY 0.764 x 0.150 Microstrip 0.290 x 0.430 Microstrip 0.100 x 0.430 Microstrip 0.080 x 0.430 Microstrip 0.257 x 0.215 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55 * Line length includes microstrip bends Figure 2. MMRF1006HR5(HSR5) Pulse Test Circuit Schematic -- 450 MHz Table 5. MMRF1006HR5(HSR5) Pulse Test Circuit Component Designations and Values -- 450 MHz Part Description Part Number Manufacturer B1, B2 47 , 100 MHz Short Ferrite Beads 2743019447 Fair--Rite C1, C11 47 F, 50 V Electrolytic Capacitors 476KXM063M Illinois C2, C12, C28, C34 0.1 F Chip Capacitors CDR33BX104AKYS Kemet C3, C13, C27, C33 220 nF, 50 V Chip Capacitors C1812C224K5RAC Kemet C4, C14 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C5, C6, C8, C15 27 pF Chip Capacitors ATC100B270JT500XT ATC C7, C10 0.8--8.0 pF Variable Capacitors 27291SL Johanson Components C9 33 pF Chip Capacitor ATC100B330JT500XT ATC C16 12 pF Chip Capacitor ATC100B120JT500XT ATC C17 10 pF Chip Capacitor ATC100B100JT500XT ATC C18 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C19 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C20, C21, C22, C23, C25, C32 240 pF Chip Capacitors ATC100B241JT200XT ATC C24 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C26, C31 2.2 F, 100 V Chip Capacitors 2225X7R225KT3AB ATC C29, C30, C35, C36 330 F, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Nippon Chemi--Con Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro--Coax L1, L2 2.5 nH, 1 Turn Inductors A01TKLC Coilcraft L3, L4 43 nH, 10 Turn Inductors B10TJLC Coilcraft MMRF1006HR5 MMRF1006HSR5 RF Device Data Freescale Semiconductor, Inc. 3 C29 C27 C1 B1 C2 C3 C25 L1 COAX1 COAX3 C23 C18 C19 C16 C10 C8 C9 C6 COAX2 C26 L3 CUT OUT AREA C5 C7 C15 C17 C22 C20 C21 C24 L4 L2 COAX4 C32 C11 C30 C28 C4 B2 C12 C14 C13 C31 C33 C35 C36 C34 Figure 3. MMRF1006HR5(HSR5) Pulse Test Circuit Component Layout -- 450 MHz MMRF1006HR5 MMRF1006HSR5 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 100 Ciss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 1000 Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 TJ = 200C 10 0 10 20 40 30 100 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Note: Each side of device measured separately. Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 80 18 Gps 60 50 40 17 D 16 30 15 20 14 10 13 1 63 P1dB = 60.33 dBm (1078.94 W) 62 61 Actual 60 59 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 58 57 56 0 1000 2000 100 10 Ideal P3dB = 60.70 dBm (1174.89 W) 64 70 Pout, OUTPUT POWER (dBm) 19 65 D, DRAIN EFFICIENCY (%) VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 20 Gps, POWER GAIN (dB) 1 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 21 55 34 35 36 37 38 39 40 41 42 43 Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Output Power versus Input Power 44 22 23 IDQ = 6000 mA 22 20 3600 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) TC = 25C 1 1 TJ = 175C TJ = 150C 21 1500 mA 20 750 mA 19 375 mA 18 VDD = 50 Vdc f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 150 mA 17 10 100 1000 18 45 V 16 VDD = 30 V 35 V 12 0 200 400 40 V IDQ = 150 mA, f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 14 2000 50 V 600 800 1000 1200 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Power Gain versus Output Power Figure 9. Power Gain versus Output Power 1400 MMRF1006HR5 MMRF1006HSR5 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 55 Gps, POWER GAIN (dB) 85_C 50 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% 45 40 19 18 30 25 80 70 85_C 60 25_C 16 50 40 D 15 30 14 20 13 10 40 35 1 45 0 1000 2000 100 10 Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Output Power versus Input Power Figure 11. Power Gain and Drain Efficiency versus Output Power 109 f = 450 MHz 0.16 VDD = 50 Vdc Pout = 1000 W CW D = 67% 108 0.14 0.12 D = 0.7 0.1 PD D = 0.5 0.08 0.06 0.02 90 12 0.18 0.04 TC = --30_C Gps 17 t2 TC = Case Temperature ZJC = Thermal Impedance (from graph) PD = Peak Power Dissipation D = Duty Factor = t1/t2 t1 = Pulse Width; t2 = Pulse Period TJ (peak) = PD * ZJC + TC D = 0.3 D = 0.1 0 0.00001 0.0001 t1 0.001 0.01 0.1 1 10 MTTF (HOURS) Pout, OUTPUT POWER (dBm) 20 25_C 35 20 ZJC, THERMAL IMPEDANCE (C/W) 21 TC = --30_C 60 100 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 sec Duty Cycle = 20% D, DRAIN EFFICIENCY (%) 22 65 107 106 105 90 110 130 150 170 190 210 230 RECTANGULAR PULSE WIDTH (S) TJ, JUNCTION TEMPERATURE (C) Figure 12. Transient Thermal Impedance MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 250 NOTE: For pulse applications or CW conditions, use the MTTF calculator referenced above. Figure 13. MTTF versus Junction Temperature -- CW MMRF1006HR5 MMRF1006HSR5 6 RF Device Data Freescale Semiconductor, Inc. Zo = 2 f = 450 MHz f = 450 MHz Zsource Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Zload 450 0.86 + j1.06 1.58 + j1.22 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 14. Series Equivalent Source and Load Impedance -- 450 MHz MMRF1006HR5 MMRF1006HSR5 RF Device Data Freescale Semiconductor, Inc. 7 PACKAGE DIMENSIONS MMRF1006HR5 MMRF1006HSR5 8 RF Device Data Freescale Semiconductor, Inc. MMRF1006HR5 MMRF1006HSR5 RF Device Data Freescale Semiconductor, Inc. 9 MMRF1006HR5 MMRF1006HSR5 10 RF Device Data Freescale Semiconductor, Inc. MMRF1006HR5 MMRF1006HSR5 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2013 Description Initial Release of Data Sheet MMRF1006HR5 MMRF1006HSR5 12 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. 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