MMRF1006HR5 MMRF1006HSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in communications,
radar and industrial applications.
Typical Pulse Performance at 450 MHz: VDD =50Vdc,I
DQ = 150 mA,
Pout = 1000 W Peak (200 W Avg.), Pulse Width = 100 sec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 W Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +110 Vdc
Gate--Source Voltage VGS -- 6 , + 1 0 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1) TJ225 C
Total Device Dissipation @ TC=25C, CW only (2) PD1333 W
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.
Document Number: MMRF1006H
Rev. 0, 12/2013
Freescale Semiconductor
Technical Data
MMRF1006HR5
MMRF1006HSR5
10--500 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
NI--1230H--4S
MMRF1006HR5
PARTS ARE PUSH--PULL
(Top View)
RFoutA/VDSA
31
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
NI--1230S--4S
MMRF1006HSR5
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1006HR5 MMRF1006HSR5
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Impedance, Junction to Case
Pulse: Case Temperature 80C, 1000 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
450 MHz (2)
ZJC 0.03 C/W
Thermal Resistance, Junction to Case
CW: Case Temperature 84C, 1000 W CW, 352.2 MHz
RJC 0.15 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2000 V
Machine Model (per EIA/JESD22--A115) A, passes 125 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (3)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 10 Adc
Drain--Source Breakdown Voltage
(ID= 300 mA, VGS =0Vdc)
V(BR)DSS 110 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 100 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 5 mA
On Characteristics
Gate Threshold Voltage (3)
(VDS =10Vdc,I
D= 1600 Adc)
VGS(th) 11.68 3Vdc
Gate Quiescent Voltage (4)
(VDD =50Vdc,I
D= 150 mAdc, Measured in Functional Test)
VGS(Q) 1.5 2.2 3.5 Vdc
Drain--Source On--Voltage (3)
(VGS =10Vdc,I
D=4Adc)
VDS(on) —0.28 —Vdc
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —3.3 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —147 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —506 —pF
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz,
100 sec Pulse Width, 20% Duty Cycle
Power Gain Gps 19 20 22 dB
Drain Efficiency D60 64 — %
Input Return Loss IRL —-- 1 8 -- 9 dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
(continued)
MMRF1006HR5 MMRF1006HSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 2. MMRF1006HR5(HSR5) Pulse Test Circuit Schematic — 450 MHz
Z14*, Z15* 0.764x 0.150Microstrip
Z16, Z17 0.290x 0.430Microstrip
Z18, Z19 0.100x 0.430Microstrip
Z20, Z21, Z22, Z23 0.080x 0.430Microstrip
Z24 0.257x 0.215Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030,r=2.55
* Line length includes microstrip bends
Z1 0.366x 0.082Microstrip
Z2*, Z3* 0.170x 0.100Microstrip
Z4*, Z5* 0.220x 0.451Microstrip
Z6, Z7 0.117x 0.726Microstrip
Z8*, Z9* 0.792x 0.058Microstrip
Z10, Z11 0.316x 0.726Microstrip
Z12, Z13 0.262x 0.507Microstrip
RF
INPUT
Z4
C5
Z5
C6
Z1
DUT
VSUPPLY
Z13
RF
OUTPUT
Z24
VBIAS
Z9
Z2
Z3
Z15
Z14
B1
C22
C24
Z18 Z20
C25 C28 C29
+
COAX1
COAX2
COAX3
COAX4
Z22
C1
+
L1
C7 C8
Z6
Z7
C23
C21
C20
C19
Z23
C18
Z21
C17
Z19
C16
C9 C10
Z10
Z11
L2
B2
C11
+
C13C12 C14
Z8
C3C2 C4
Z12 Z16
Z17
C15
C26 C27 C30
+
VBIAS
VSUPPLY
C31 C34 C35
+
C32 C33 C36
+
L3
L4
Table 5. MMRF1006HR5(HSR5) Pulse Test Circuit Component Designations and Values — 450 MHz
Part Description Part Number Manufacturer
B1, B2 47 , 100 MHz Short Ferrite Beads 2743019447 Fair--Rite
C1, C11 47 F, 50 V Electrolytic Capacitors 476KXM063M Illinois
C2, C12, C28, C34 0.1 F Chip Capacitors CDR33BX104AKYS Kemet
C3, C13, C27, C33 220 nF, 50 V Chip Capacitors C1812C224K5RAC Kemet
C4, C14 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet
C5, C6, C8, C15 27 pF Chip Capacitors ATC100B270JT500XT ATC
C7, C10 0.8--8.0 pF Variable Capacitors 27291SL Johanson Components
C9 33 pF Chip Capacitor ATC100B330JT500XT ATC
C16 12 pF Chip Capacitor ATC100B120JT500XT ATC
C17 10 pF Chip Capacitor ATC100B100JT500XT ATC
C18 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC
C19 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC
C20, C21, C22, C23,
C25, C32
240 pF Chip Capacitors ATC100B241JT200XT ATC
C24 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C26, C31 2.2 F, 100 V Chip Capacitors 2225X7R225KT3AB ATC
C29, C30, C35, C36 330 F, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Nippon Chemi--Con
Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2Shield Length UT--141C--25 Micro--Coax
L1, L2 2.5 nH, 1 Turn Inductors A01TKLC Coilcraft
L3, L4 43 nH, 10 Turn Inductors B10TJLC Coilcraft
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1006HR5 MMRF1006HSR5
Figure 3. MMRF1006HR5(HSR5) Pulse Test Circuit Component Layout — 450 MHz
CUT OUT AREA
COAX1
C1
B1 C2 C3
C4
L1
C5
C6
COAX2
C7
C8 C9
C10
C11
B2 C12
C13
C14 C33
C34
C36
C35
C31
C32
L4
COAX3
COAX4
C15
C16
C17
C19
C18
C24
C22
C23
C21
C20
L3
C25 C26
C27
C28
C29
C30
L2
MMRF1006HR5 MMRF1006HSR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
1
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
100
10
40
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
1
100
1
TC=25C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
ID, DRAIN CURRENT (AMPS)
100
TJ= 200C
TJ= 175C
TJ= 150C
Note: Each side of device measured separately.
21
1
0
80
10
18
16
14
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
17
15
13
1000 2000
Gps
20
19
20
100
10
VDD =50Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
55
65
34
63
62
61
Pin, INPUT POWER (dBm) PEAK
Figure 7. Output Power versus Input Power
64
60
44
59
58
57
35 36 37 38 39 40 41 42
Pout, OUTPUT POWER (dBm)
P3dB = 60.70 dBm (1174.89 W)
Actual
Ideal
P1dB = 60.33 dBm (1078.94 W)
56
43
VDD =50Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
17
23
10
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
Gps, POWER GAIN (dB)
100
18
IDQ = 6000 mA
1000 2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
21
22
VDD =50Vdc
f = 450 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
Figure 9. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
VDD =30V
12
22
0
16
35 V
20
45 V
200 400 600 800 1000 1200 1400
50 V
40 V
14
18
IDQ = 150 mA, f = 450 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
Note: Each side of device measured separately.
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1006HR5 MMRF1006HSR5
TYPICAL CHARACTERISTICS
45
35
65
20
25_C
TC=--30_C
85_C
3525
55
50
Pin, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
Pout, OUTPUT POWER (dBm)
30 40
60
45
40
VDD =50Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
22
1
0
100
100
17
15
13
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D
,
DRAIN EFFICIENCY (%)
D
16
14
12
1000 2000
25_C
TC=--30_C
85_C
20
18
Gps
19
20
21
10
80
90
10
VDD =50Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 sec
Duty Cycle = 20%
0.18
110
RECTANGULAR PULSE WIDTH (S)
Figure 12. Transient Thermal Impedance
ZJC, THERMAL IMPEDANCE (C/W)
0.00001
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.0001 0.001 0.01 0.1
TC= Case Temperature
ZJC = Thermal Impedance (from graph)
PD= Peak Power Dissipation
D=DutyFactor=t
1/t2
t1= Pulse Width; t2= Pulse Period
TJ(peak) = PD*Z
JC +T
C
t2
t1
PD
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 13. MTTF versus Junction Temperature -- CW
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE:For pulse applications or CW conditions, use the MTTF
calculator referenced above.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
108
VDD =50Vdc
Pout = 1000 W CW
D= 67%
D=0.7
D=0.5
D=0.3
D=0.1
f = 450 MHz
MMRF1006HR5 MMRF1006HSR5
7
RF Device Data
Freescale Semiconductor, Inc.
Zo=2
Zload
f = 450 MHz
Zsource f = 450 MHz
VDD =50Vdc,I
DQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Zload
450 0.86 + j1.06 1.58 + j1.22
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 14. Series Equivalent Source and Load Impedance — 450 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1006HR5 MMRF1006HSR5
PACKAGE DIMENSIONS
MMRF1006HR5 MMRF1006HSR5
9
RF Device Data
Freescale Semiconductor, Inc.
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1006HR5 MMRF1006HSR5
MMRF1006HR5 MMRF1006HSR5
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1006HR5 MMRF1006HSR5
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2013 Initial Release of Data Sheet
MMRF1006HR5 MMRF1006HSR5
13
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: MMRF1006H
Rev. 0, 12/2013
