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IRF7805/IRF7805APbF
Parameter Min Typ Max Min Typ Max Units Conditions
Diode Forward VSD 1.2 1.2 V IS = 7A, VGS = 0V
Voltage*
Reverse Recovery Qrr 88 88 nC di/dt = 700A/µs
ChargeVDS = 16V, VGS = 0V, IS = 7A
Reverse Recovery Qrr(s) 55 55
Charge (with Parallel
Schotkky)
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source V(BR)DSS 30 – – 30 – – V VGS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source RDS(on) 9.2 11 9.2 11 mΩVGS = 4.5V, ID = 7A
on Resistance*
Gate Threshold Voltage* VGS(th) 1.0 1.0 V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS 30 30 µA VDS = 24V, VGS = 0
150 150 VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage IGSS ±100 ±100 nA VGS = ±12V
Current*
Total Gate Charge* Qg22 31 22 31 VGS = 5V, ID = 7A
Pre-Vth Qgs1 3.7 3.7 VDS = 16V, ID = 7A
Gate-Source Charge
Post-Vth Qgs2 1.4 1.4 nC
Gate-Source Charge
Gate to Drain Charge Qgd 6.8 6.8
Switch Charge* QSW 8.2 11.5 8.2
(Qgs2 + Qgd)
Output Charge* Qoss 30 36 30 36 VDS = 16V, VGS = 0
Gate Resistance Rg1.7 1.7 Ω
Turn-on Delay Time td(on) 16 16 VDD = 16V
Rise Time tr20 20 ns ID = 7A
Turn-off Delay Time td (off) 38 38 Rg = 2Ω
Fall Time tf16 16 VGS = 4.5V
Resistive Load
Electrical Characteristics
Source-Drain Rating & Characteristics
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Measured at VDS < 100mV. This approximates actual operation of a synchronous rectifier.
Typ = measured - Qoss
* Devices are 100% tested to these parameters.
IRF7805 IRF7805A
Current*
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A