Parameter Symbol IRF7805 IRF7805A Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain or Source 25°C ID13 13 A
Current (VGS 4.5V) 70°C 10 10
Pulsed Drain CurrentIDM 100 100
Power Dissipation 25°C PD2.5 W
70°C 1.6
Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C
Continuous Source Current (Body Diode)IS2.5 2.5 A
Pulsed source Current ISM 106 106
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
Description
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
The IRF7805/IRF7805A offers maximum efficiency for
mobile CPU core DC-DC converters.
HEXFET® Chip-Set for DC-DC Converters
IRF7805 IRF7805A
Vds 30V 30V
Rds(on) 11m 11m
Qg 31nC 31nC
Qsw 11.5nC
Qoss 36nC 36nC
Absolute Maximum Ratings
Parameter Max. Units
Maximum Junction-to-AmbientRθJA 50 °C/W
Thermal Resistance
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
Device Features
IRF7805/IRF7805APbF
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11/9/04
SO-8
PD – 95937
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IRF7805/IRF7805APbF
Parameter Min Typ Max Min Typ Max Units Conditions
Diode Forward VSD 1.2 1.2 V IS = 7A, VGS = 0V
Voltage*
Reverse Recovery Qrr 88 88 nC di/dt = 700A/µs
ChargeVDS = 16V, VGS = 0V, IS = 7A
Reverse Recovery Qrr(s) 55 55
Charge (with Parallel
Schotkky)
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source V(BR)DSS 30 30 V VGS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source RDS(on) 9.2 11 9.2 11 mVGS = 4.5V, ID = 7A
on Resistance*
Gate Threshold Voltage* VGS(th) 1.0 1.0 V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS 30 30 µA VDS = 24V, VGS = 0
150 150 VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage IGSS ±100 ±100 nA VGS = ±12V
Current*
Total Gate Charge* Qg22 31 22 31 VGS = 5V, ID = 7A
Pre-Vth Qgs1 3.7 3.7 VDS = 16V, ID = 7A
Gate-Source Charge
Post-Vth Qgs2 1.4 1.4 nC
Gate-Source Charge
Gate to Drain Charge Qgd 6.8 6.8
Switch Charge* QSW 8.2 11.5 8.2
(Qgs2 + Qgd)
Output Charge* Qoss 30 36 30 36 VDS = 16V, VGS = 0
Gate Resistance Rg1.7 1.7
Turn-on Delay Time td(on) 16 16 VDD = 16V
Rise Time tr20 20 ns ID = 7A
Turn-off Delay Time td (off) 38 38 Rg = 2
Fall Time tf16 16 VGS = 4.5V
Resistive Load
Electrical Characteristics
Source-Drain Rating & Characteristics
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300 µs; duty cycle 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Measured at VDS < 100mV. This approximates actual operation of a synchronous rectifier.
Typ = measured - Qoss
* Devices are 100% tested to these parameters.
IRF7805 IRF7805A
Current*
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
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IRF7805/IRF7805APbF
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called the
Control FET, are impacted by the Rds(on) of the MOSFET,
but these conduction losses are only about one half of
the total losses.
Power losses in the control switch Q1 are given by;
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
P
loss =Irms
2×Rds(on )
()
+I×Qgd
ig
×Vin ×f
+I×Qgs2
ig
×Vin ×f
+Qg×Vg×f
()
+Qoss
2×Vin ×f
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source charge
that is included in all MOSFET data sheets. The impor-
tance of splitting this gate-source charge into two sub
elements, Qgs1 and Qgs2, can be seen from Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold volt-
age has been reached (t1) and the time the drain cur-
rent rises to Idmax (t2) at which time the drain voltage
begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output
capacitance of the MOSFET during every switching
cycle. Figure 2 shows how Qoss is formed by the paral-
lel combination of the voltage dependant (non-linear)
capacitance’s Cds and Cdg when multiplied by the power
supply input buss voltage.
Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss =P
conduction +P
drive +P
output
*
P
loss =Irms
2×Rds(on)()
+Qg×Vg×f
()
+Qoss
2×Vin ×f
+Qrr ×Vin ×f
(
)
*dissipated primarily in Q1.
Power MOSFET Selection for DC/DC
Converters
4
1
2
Drain Current
Gate Voltage
Drain Voltage
t3
t2
t1
VGTH
QGS1
QGS2
QGD
t0
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IRF7805/IRF7805APbF
Figure 2: Qoss Characteristic
For the synchronous MOSFET Q2, Rds(on) is an im-
portant characteristic; however, once again the impor-
tance of gate charge must not be overlooked since it
impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and re-
verse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7805 can be downloaded in ma-
chine readable format at www.irf.com.
www.irf.com 5
IRF7805/IRF7805APbF
Figure 7. Typical Rds(on) vs. Gate-to-Source Voltage
Figure 5. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 3. Normalized On-Resistance vs. Temperature
Figure 8. Typical Rds(on) vs. Gate-to-Source Voltage
Figure 6. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 4. Normalized On-Resistance vs. Temperature
IRF7805 IRF7805A
Typical Characteristics
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IRF7805/IRF7805APbF
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRF7805 IRF7805A
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Figure 9. Typical Source-Drain Diode Forward Voltage Figure 10. Typical Source-Drain Diode Forward Voltage
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
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IRF7805/IRF7805APbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 4
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L INE CONF OR MS T O JE DE C OU T L I NE MS - 0 12AA.
NOT E S :
1. DIMENS IONING & T OLER ANCING PE R AS ME Y14.5M-1994.
2. CONT R OLLING DIME NS ION: MILLIMETE R
3. DI ME N S IONS ARE S H OWN I N MIL L I ME T E R S [I NCH E S ] .
5 DIMENS ION DOES NOT INCL UDE MOL D PROT R USIONS .
6 DIMENS ION DOES NOT INCL UDE MOL D PROT R USIONS .
MOL D PROT RUS IONS NOT T O EXCEE D 0.25 [.010].
7 DIMENS ION IS T HE LE NGT H OF L E AD F OR S OL DER ING TO
A S UBS T RATE.
MOL D PROT RUS IONS NOT T O EXCEE D 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
A = AS S E MB L Y S IT E CODE
www.irf.com8
IRF7805/IRF7805APbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04