CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/us
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number：DS_D1308060 Version:K13
Note 1： tp = 2.0 μs, 1.0KHz
Note 2：Pulse test with PW=300u sec, 1% duty cycle
25
1.5Typical thermal resistance
Operating junction temperature range - 55 to + 150
Storage temperature range - 55 to + 150
mA
15 10
Voltage rate of change (Rated V
R
)10000
0.75 0.85 0.88
Maximum reverse current @ rated VR T
A
=25 ℃
T
A
=125 ℃I
R
0.1
V
0.70 0.80 0.85 0.88
0.57 0.65 0.75 0.78
0.80
Maximum Instantaneous Forward Voltage (Note 2)
IF= 5 A, TA=25℃
IF= 5 A, TA=125℃
IF= 10 A, TA=25℃
IF= 10 A, TA=125℃
V
F
0.90 0.95 0.98
0.67
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
120 A
Peak Repetitive Reverse Surge Current (Note 1) 1 0.5
Maximum DC blocking voltage
Maximum average forward rectified current 10
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz) I
FRM
10
MBR
10100
CT
MBR
10150
CT
MBR
10200
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque：5 in-lbs maximum
Weight：1.88 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
MBR
1035
CT
MBR
1045
CT
MBR
1050
CT
MBR
1060
CT
MBR
1090
CT
TO-220AB
MECHANICAL DATA
Case：TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal：Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity：As marked
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
PART NO.
PART NO.
MBR1060CT
MBR1060CT
MBR1060CT
(TA=25℃ unless otherwise noted)
Document Number：DS_D1308060 Version:K13
50 / Tube
MBR1060CTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
MBR1060CT C0 C0
MBR1060CT C0G C0 G Green compound
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT)
MBR10xxCT
(Note 1) Prefix "H" C0 Suffix "G"
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
TO-220AB
0
1
2
3
4
5
6
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
0
30
60
90
120
150
180
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
TA=75℃
TA=125℃
TA=25℃
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300us
1% Duty Cycle
MBR1050CT-1060CT
MBR1035CT-1045CT
MBR1090CT-10100CT
MBR10150-10200CT
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number：DS_D1308060 Version:K13
MARKING DIAGRAM
MBR1035CT thru MBR10200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit(mm) Unit(inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION. (sec)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
