The 2N6676, 2N6677 and 2N6678 series of NPN power transistors is designed for use in power switching applica- tions requiring high-voltage capability, fast switching speeds and low-saturation voltages. These devices are optimized to provide a unique combination of ultra-low switching losses and high safe-operating area (SOA), ideally suited for off-line Switching Power Supplies, converter circuits and pulse width modulated regulators. Features: e 100C maximum limits specified for: Switching times Saturation voitages e Leakage currents RBSOA (VCEx = 350 to 450V) at rated Ic continuous. Very fast turn-off: tt << 100 nsec (typ.) Inductive Load @ 15A maximum ratings HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS GE EQUIVALENT D64VS3, 4,5 2N6676,77,78 300-400 VOLTS 15 AMP, 175 WATTS NPN COLLECTOR EMITTER CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) Oe > = 0.043(1.09) gi, af 0.038(0.97) CASE TEMP REFERENCE POINT 20(5.00) EMITTER BASE 0.16214.09) pia, 0.15(3.84) 2 HOLES 06st 47) fe Oa pa. 7 r -388(9.00) MAX ogee SEATING PLANE Te 426/10.82) MIN 1.050(26.68) MAX."") 0,675(17.15) 0.680(16.81) 1.197(30.40) 1.177(29.90) 1.573(39.96) MAX. 0.225(5.72) he 0.205(5.21) (CASE) 0.440(11,18) 0.420 10.67) COLLECTOR RATING SYMBOL 2N6676 2N6677 2N6678 UNITS Collector-Emitter Voltage VCEO 300 350 400 Volts Collector-Emitter Voltage Voex 350 400 450 Volts Collector-Emitter Voltage Voev 450 550 650 Volts Emitter Base Voltage VEBO 8 8 8 Volts Collector Current Continuous lo 15 15 15 A Peak") Icom 20 20 20 Base Current Continuous Ip 5 5 5 A Peak IBM 10 10 10 Emitter Current Continuous le 20 20 20 A Peak") lem 30 30 30 Total Power Dissipation @ Tc = 25C Pp 178 178 178 Watts Te = 100C 111 111 111 Derate above 25C 1.0 1.0 1.0 w/?C Operating a and Storage Junction Temperature Range Th Tstg -65 to +200 ~65 to +200 -65 to +200 c thermal characteristics Thermal Resistance, Junction to Case Rec 1.0 1.0 1.0 C/W Maximum Lead Temperature for Soldering Purpose: % from Case for 5 Seconds TL 235 235 235 C (1) Pulse Test: Pulse Width = 5ms. Duty Cycle = 10%. 823electrical characteristics (To = 25C) (unless otherwise specified) 1 CHARACTERISTIC | SYMBOL | MIN MAX | UNIT off characteristics Collector-Emitter Sustaining Voltage 2N6676 | VcEC(sus) 300 _ Volts (ig = 100mA, ig = 0) 2N6677 350 _ 2N6678 400 Collector-Emitter Voltage 2N6676 VCEX 350 _ Volts (ig = 15A, Ig1 = 3A, lpg = 3.0A) 2N6677 400 (VBE(OFF) = -6V, L = 50 wh) 2N6678 450 Collector Cutoff Current Icev mA (Vcev = Rated Value, Vge(off) = -1-5V) _ 0.1 (Vcev = Rated Value, VBE (off) = -1.5V, Tc = 100C) _ 1.0 Emitter Cutoff Current (Ve = 8V, Ic = 0) [FBO ~ ao second breakdown Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 13 Clamped Inductive SOA with Base Reversed Bias RBSOA SEE FIGURE 14 on characteristics DC Current Gain hee (Io = 10A, Voce = 2V) 10 (I = 15A, VCE = 3V) 8 Collector-Emitter Saturation Voltage VCE(SAT) Volts (Ic = 10A, Ip = 2.0A) 0.7 (Ic = 18A, Ip = 3.0A) 1.5 (I = 15A, Ip = 3.0A, Tc = 100C) _ 2.0 Base-Emitter Saturation Voltage VBE(SAT) Volts (Ic = 15A, Ip = 3.0A) _ 1.5 (Ig = 15A, Ip = 3.0A, Tc = 100C) _ 1.5 dynamic characteristics Current Gain Bandwidth Product (Io = 1.0A, VoE = 10V, ftest = 1.0 MHz) fT 15 50 MHz Smail Signal Current Gain _ (Io = 2.0A, Vg = 10V, ftest = 5 MHz) hFE 3 10 Output Capacitance (Vcp = 10V, Ie = 0, f = 0.1 MHz) Cos 150 500 pF switching characteristics MAXIMUM Resistive Load (See Figure 17 for Test Circuit) Tc 25C 100C Delay Time Voc = 200V, Iq = 15A tg 0.1 0.2 us Rise Time {Bi = Ipe = 3A, Vee = -6V tr 0.6 1.0 usec Storage Time tp = 20 usec ts 2.5 4.0 psec Fall Time tr 0.5 1.0 psec Inductive Load, Clamped (See Figure 17 for Test Circuit) Storage Time Voc = 200V, I> = 15A ts 3.0 45 us Fall Time VoLamp = Rated Vcex tf 0.3 0.6 psec Switch Time Iga = 3.0A, VBE(OFF = -6V te 0.5 0.8 psec L. = 50h, Ro = 13.40 tp = 20 psec (1) Pulse Duration = 300us, Duty Factor <2%, Do not measure on a Curve tracer. * In accordance with JEDEC Registered Data. 824TYPICAL DC CHARACTERISTICS 20 Ty - 65C aos Hp -DC CURRENT GAIN a Vog 220 Voce tlOV w= lo 15 Ig COLLECTOR CURRENT (AMPERES) FIGURE 1. DC CURRENT GAIN 10.0 @ 00 Bal Ty #25C Bet ic /Tpy Vee(sar)- COLLECTOR-EMITTER SATURATION VOLTAGE ( VOLTS} fe] 9 9 Oo- nN = nt) > 7 WMO _a o 2 4 6 8 100 1S Ig, COLLECTOR CURRENT (AMPERES) FIGURE 3. Veg (sat) VS Ic. Te = 25C oS oo = ~Te=100C Te=25C Be=lc/la, a 2 }o Vee, BASE -EMIT TER VOLTAGE (VOLTS) 9 = - OUwN @2 o a o 9 a _8 3 2 4 6 8 10 1S I, COLLECTOR CURRENT (AMPERES) FIGURE 5. Vee (sat) V3 Ic 825 IgttOA IgttSA Veg COLLECTOR-EMITTER VOLTAGE (VOLTS) 02 05 A 2 5 1.0 2.0 1g, BASE CURRENT (AMPERES) 5.0 70 0.0 FIGURE 2. COLLECTOR SATURATION REGION 10.0 8.0 60 Tc 200 Bele ley n Oo; o VOLTAGE (VOLTS) _ : on > Veetsar)~ COLLECTOR-EMITTER SATURATION Nn 4 6 8 100 15 I, COLLECTOR CURRENT (AMPERES) FIGURE 4. Vee (sat) VS Ic. Te = 100C 10,000 i000 C,CAPACITANCE (pf) | 2 5 10 20 50 100 Vj REVERSE VOLTAGE (VOLTS) FIGURE 6. CAPACITANCECOLLECTOR CURRENT SWITCHING TIME (SEC) NORMALIZED SWITCHING TIME TYPICAL SWITCHING CHARACTERISTICS ~ Te 00C Te. =25C Veg #250 (200V) Ipy*lg/6 (1/5) tp *S0mSEC SEE FIGURE 17 FOR TEST CIRCUIT Ol Lo 2 4 6 8 0 1S Ig, COLLECTOR CURRENT (AMPERES) FIGURE 7. TURN-ON TIME RESISTIVE LOAD COLLECTOR 10% Ip FIGURE 9. INDUCTIVE TURN-OFF WAVEFORMS ed a Te = 25C 1.2154 ie- 1 +6 (5) Ic*8A CBI A 1e=4A CLAMPED INDUCTIVE 12a 1.5F LOAD,L*200 wh (50 wh) z= cen SEE FIGURE I7 FOR 125p TEST CIRCUIT 10 e 1c*2A 75 Te =4A 1=8A 5 Tc =15A REFER TO FIGURE IO FOR 25 NORMAL SWITCHING TIMES 0 2 4 & 8 1.0 12 1.4 1.6 8 20 RATIO, 19,/Ig2 FIGURE 11. STORAGE TIME VARIATION WITH Iga 826 TEST CIRCUIT g 100 80 q 60 n 40 z ts - T, 100C 2 20 Te28C 2 Veo *250V (200V) = 10 Igy2lg/6 Igotig/5 (Lay 22 22/5) e 8 tp*8O0 MSEC (t) =20nSEC : 6 SEE FIGURE '7 FOR o & eo aw a 2 8 1.0 2 4 6 8 10 1S Ig COLLECTOR CURRENT (AMPERES) FIGURE 8. TURN-OFF TIME RESISTIVE LOAD 10.0 5.0 T. 100C 20 Te #25C (Vog2 200V Lo Voe(cLamp)"250V (Vogy) Tp) =I, /6, Ipotle/5 (Ia, +I ge7I/5) 5 tp*50 SEC, Vee(orr)*~S (tp =204 SEC) (V L*200ph 2 SEE FIGURE 17 FOR ~ TEST CIRCUIT 05 02 COLLECTOR CURRENT SWITCHING TIME (SEC) Ol 10 2 4 6 8 10 15 Ig, COLLECTOR CURRENT (AMPERES) FIGURE 10. CLAMPED INDUCTIVE TURN-OFF TIME 2.5 Te 225C Tesl5A w Te/Tp, *6 (5) 188A 2 CLAMPED INDUCTIVE (Aignan F aol. LOAD, L=200uh (50ph) 1g22A 7 g SEE FIGURE 17 FOR YZ" = TEST CIRCUIT Fis LZ) a a Qa N z' Tc 2A I 3 REFER TO FIGURE 10 FOR tert ORMAL SWITCHING TIMES 5 1%8A Igtt5A oO 2 4 6 @ 10 12 14 16 18 20 RATIO, 1g)/Ipe FIGURE 12. FALL TIME VARIATION WITH Igo1g,COLLECTOR CURRENT (AMPERES) 100 - BONDING WIRE LIMIT = THERMAL LIMIT SECOND BREAKDOWN LIMIT o To= 25C CURVES APPLY UP TO RATED Veeorsus) 1.0 to 100 =.200 Veg COLLECTOR-EMIT TER VOLTAGE ( VOLTS) 1000 FIGURE 13. FORWARD BIAS SAFE OPERATING AREA Ig, COLLECTOR CURRENT (AMPERES) T, s!00C Ipotlc/5 Vae(orryS-6.0V L=200yh Voeximax) 2 t 2N6677 2nee7e 0 80 100 180 200 250 300 350 400 VeeicLamp) COLLECTOR - EMITTER CLAMP VOLTAGE (VOLTS) 450 FIGURE 14. CLAMPED REVERSE BIAS SAFE OPERATING AREA MEASURED. 1.0 07 = os _ 2 z 3 0.3 z 8 ir = o = 0.1 | | 2 z _ q Z 0.07 = 0.05 suk 3 =O. - te = DUTY CYCLE D,* t/t : .03 ee tte a 9.0 DUTY CYCLE CURVES APPLY FOR 2 Z 0.02 POWER PULSE TRAINS. SINGLE TIME t, REPRESENTS PULSE - PULSE WITH Tt). 0.01 0.01 0.02 0.080.102 0.5 1.0 2.0 0 IO 20 50 100 200 $00 1.0K o 20 40 66 80 100 120 140 160 180 200 t, TIME (mS) Te ~ CASE TEMPERATURE (C) FIGURE 15. TRANSIENT THERMAL RESPONSE FIGURE 16. POWER DERATING Vgg (AS SPECIFIED) RESISTIVE 56.0 INSI4 (N9I4 SWITCHING madd D}-D sw a | MONET 20 1 ote |F : ? AND RBSOA WAVEFORMS MIN O00Zpft Ig oo -@ 11 uo . tq=A-B NOTE. \ YX Vce (CLAMP) sare (2) VALUE OF L (INOUCTOR) IS INSI4 3 (AS SPECIFIED) SPECIFIED ON RATING CURVES. ye ty *X- (3) SELECT Rp (RESISTIVE SWITCHING) Vep(cLame) tes-Z FOR DESIRED Ic. OO! {as (4) ADJUST Vg; Vag AND Rgg FOR SPECIFIED) TIME DESIRED Ig, AND Igo VALUES. NOTE: (5) CIRCUIT LAYOUT AND COMPONENT , TRANSITION TIME FROM 90% Ig, TO 90% SELECTION IS CRITICAL DUE TO 1 Ig2 (%-W) MUST BE LESS THAN 100 nSEC. FAST SWITCHING TIMES TO BE Vez aa FIGURE 17. TEST CIRCUIT FOR SWITCHING TIMES AND RBSOA 827