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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 550 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW550 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C22A
IDM TC= 25 °C, pulse width limited by TJM 88 A
IAR TC= 25 °C22A
EAR TC= 25°C30mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 00 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 mA 550 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 . 5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 250 mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 0.27 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-247 AD
HiPerFETTM IXFH 22 N55 VDSS = 550 V
Power MOSFET ID (cont) = 22 A
RDS(on) = 0.27 W
trr £ 250 ns
G = Gate, D = Drain,
S = Source, TAB = Drain
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low trr
Preliminary data
Features
• International standard packages
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (< 5 nH)
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• Power Factor Control Circuits
• Uninterruptible Power Supplies (UPS)
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
D (TAB)
94527A (10/95)
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 1 1 1 8 S
Ciss 4200 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 4 50 p F
Crss 135 pF
td(on) 20 40 ns
trVGS = 10 V, VDS = 0.5 • VDSS,4360ns
td(off) ID = 0.5 • ID25, RG = 2 W (External) 7 0 9 0 ns
tf40 60 ns
Qg(on) 150 170 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 29 40 nC
Qgd 60 85 nC
RthJC 0.42 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 22 A
ISM Repetitive; pulse width limited by TJM 88 A
VSD IF = IS, VGS = 0 V, 1 .5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = IS, -di/dt = 100 A/ms, VR = 100 V 2 5 0 ns
TJ = 125°C 400 ns
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXFH 22N55
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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© 2000 IXYS All rights reserved
IXFH 22N55
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
5V
6V
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Norm a lized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
TC - Degrees C
0 25 50 75 100 125 150
I
D
- Am pe re s
0
5
10
15
20
25
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norm a lized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 5 10 15 20 25 30 35 40
R
DS(on)
- Norm a lized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
VGS = 10V
TJ = 25°C
VGS - Volts
012345678910
I
D
- Amperes
0
10
20
30
40 TJ = 25°C
VDS = 20V
VDS - Volts
0 5 10 15 20
I
D
- Amperes
0
10
20
30
40
VGS(th)
VGS = 15V
VGS = 10V
9V
BVDSS
VGS = 10V
ID = 11A
TJ = 25°C
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© 2000 IXYS All rights reserved
IXFH 22N55
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
Fig.11 Transient Thermal Impedance
VDS - Volt s
110100
I
D
- Ampe re s
0.1
1
10
100
Gate Charge - nCoulombs
0 20 40 60 80 100 120 140
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - V olt s
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amp ere s
0
10
20
30
40
50
60
70
80
VCE - Volt s
0 5 10 15 20 25
Capacitan ce - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
600
D=0.5
Crss
Coss
Ciss
VDS = 300V
ID = 22A
IG = 10mA Limited by RDS(on)
Single Pulse
TJ = 125°C
TJ = 25°C
D=0.2
D=0.01
D=0.02
D=0.05
D=0.1
f = 1 M hz
VDS = 25V
10µs
100µs
1ms
10ms
100ms
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