, MBR1530CTMBR1560CT VISHAY Vishay Lite-On Power Semiconductor 15A Schottky Barrier Rectifier Features @ Schottky barrier chip @ Guard ring die constuction for transient protection Low power loss, high efficiency High current capability and low forward voltage drop @ High surge capability @ Foruse in low voltage, high frequency inverters, free wheeling, and polarity protection application @ Plastic material - UL Recognition flammability classification 94V-0 95 9630 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage MBR1530CT Vern 30 Vv =Working peak reverse voltage MBR1535CT | =VRwm 35 Vv =DC Blocking voltage MBRi540CcT | =YR 40 V MBR1545CT 45 Vv MBR1550CT 50 Vv MBR1560CT 60 Vv Peak forward surge current lESM 150 A Average forward current Tc=125C lFAV 15 A Junction and storage temperature range Ti=Tstg | 65...4150 C Rev. A2, 24-Jun-98 1 (5) MBR1530CTMBR1560CT Vishay Lite-On Power Semiconductor Electrical Characteristics Tj = 25C Forward voltage Ip=7.5A, Tc=125C | MBR1530CT Ve 0.57 Vv lF=15A, Tc=25C = | -MBR1545CT | ov, 0.84 | V Ip=15A, Tc=125C Ve 0.72 Vv Ip=7.5A, Tc=125C | MBR1550CT Ve 0.65 Vv lF=15A, Tc=25C = | -MBR1560CT | =v, 0.90 | V Ip=15A, Tc=125C Ve 0.80 Vv Reverse current Te=25C MBR1530CT IR 0.1 mA To=125C MBR1545CT | Ip 15 | mA Te=25C MBR1550CT IR 1.0 | mA To=125C MBR1560CT | Ip 50 | mA Diode capacitance VR=4V, f=1MHz Cp 300 pF Thermal resistance TL=const. Rthuc 1.7 KW junction to case Voltage rate of change MBR1530CT | dV/dt 1000 | K/'W ( Rated Vp ) MBR1540CT MBR1545CT | dV/dt 10000 | K/(W MBR1560CT Characteristics (Tj = 25C unless otherwise specified) 20 16 12 leay Average Forward Current (A) 4 \ 0 0 50 100 150 15341 Tamb Ambient Temperature (C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature SOFT, 25C IF Pulse Width = 300 ps 2% Duty Cycle 10 |. Forward Current (A) 01 15342 MBR1530 MBR1545 0.4 MBR1550 MBR1560 0.8 Ve Forward Voltage ( V ) 1.0 Figure 2. Typ. Forward Current vs. Forward Voltage Rev. A2, 24-Jun-98 MBR1530CTMBR1560CT Vishay Lite-On Power Semiconductor < a 300 10 250 < 5 E 3 = 10 @, 200 3 5 p 150 0.1 g a 5 NS g we 100 <q @ ne I 8 rh] te 0.01 | 50 tT Tj = 25C ss i wn + 0 0.001 1 10 100 0 20 40 60 80 100 120 140 15343 Number of Cycles at 60 Hz 15345 Percent of Rated Peak Reverse Voltage (%) Figure 3. Max. Peak Forward Surge Current vs. Figure 5. Typ. Reverse Current vs. Percent of Number of Cycles Rated Peak Reverse Voltage 4000 Tj = 25C c f=1 MHZ a VSIG = 50mV pp Q oO cI = 1000 oO a oO oO oO GO 2 ao I a oO 100 0.1 1.0 10 100 15344 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Rev. A2, 24-Jun-98 3 (5) MBR1530CTMBR1560CT =a Vishay Lite-On Power Semiconductor VEISHAY Dimensions in mm L M B TO-220AB im Min Max - - A] 14.22 (5.88 tL B 9.65 10.67 ( 254 3.43 2 D BA 6.86 E - 6.25 nN G | 12.70 14.73 7 H 2.29 2.79 | J 0.51 11h Ly kK] 93.53 04.09 iD ! L 3.56 489 M 114 1.40 N 0.30 0.64 P 2.03 2.92 AlL Uimensions in mm N J oll P H - te technical drawings according ta DIN specifications 14468 Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number 4 (5) Rev. A2, 24-Jun-98 , J MBR1530CTMBR1560CT TSHAY Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Rev. A2, 24-Jun-98 5 (5)