DMG1012UW N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV * * * * * Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (approximate) * * * * Drain D Gate Gate Protection Diode TOP VIEW ESD PROTECTED TO 2kV G Source TOP VIEW EQUIVALENT CIRCUIT Ordering Information (Note 4) Part Number DMG1012UW-7 Notes: S Case SOT-323 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html NA1 Chengdu A/T Site Date Code Key Year Code Month Code 2009 W Jan 1 DMG1012UW Document number: DS31859 Rev. 3 - 2 NA1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Shanghai A/T Site 2010 X Feb 2 YM Marking Information Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D September 2013 (c) Diodes Incorporated DMG1012UW Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Unit V V IDM Symbol PD RJA TJ, TSTG Max 0.29 425 -55 to +150 Unit W C/W C TA = +25C TA = +85C Steady State Continuous Drain Current (Note 5) Value 20 6 1.0 0.64 6 ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = +25C (Note 3) Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 100 1.0 V nA A VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 4.5V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.0 0.45 0.6 0.75 1.2 V Static Drain-Source On-Resistance 0.3 0.4 0.5 1.4 0.7 VDS = VGS, ID = 250A VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = 16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG1012UW Document number: DS31859 Rev. 3 - 2 2 of 6 www.diodes.com September 2013 (c) Diodes Incorporated DMG1012UW 1.5 1.5 VGS = 8.0V VGS = 4.5V 1.2 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 VGS = 2.5V VGS = 2.0V 0.9 0.6 VGS = 1.5V 0.3 VDS = 5V 0.9 0.6 TA = 150C TA = 125C 0.3 TA = 85C TA = 25C TA = -55C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 0.7 0.6 0.5 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 0.3 0.6 0.9 1.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA VGS = 4.5V ID = 1.0A 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMG1012UW Document number: DS31859 Rev. 3 - 2 VGS = 4.5V 0.5 TA = 150C 0.4 TA = 125C TA = 85C 0.3 TA = 25C 0.2 TA = -55C 0.1 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.1 3 0.6 1.5 1.7 1.3 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.8 0.3 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 3 of 6 www.diodes.com 0.3 0.6 0.9 1.2 1.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature September 2013 (c) Diodes Incorporated DMG1012UW VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 10 IS, SOURCE CURRENT (A) 8 1.2 0.8 ID = 250A 0.4 6 TA = 25C 4 2 0 -50 0 0.2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 100 C, CAPACITANCE (pF) Ciss 10 C oss Crss 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0.4 0.6 0.8 1.0 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 TA = 150C 100 TA = 125C 10 TA = 85C TA = 25C 1 0 20 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 486C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DMG1012UW Document number: DS31859 Rev. 3 - 2 4 of 6 www.diodes.com September 2013 (c) Diodes Incorporated DMG1012UW Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0 8 All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X DMG1012UW Document number: DS31859 Rev. 3 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 5 of 6 www.diodes.com September 2013 (c) Diodes Incorporated DMG1012UW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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