UMT3906/SST3906/MMST3906
Transistors
Rev.B 1/4
PNP General Purpose Transistor
UMT3906
/
SST3906
/
MMST3906
zFeatures
1) BVCEO >
−40V (IC=
−1mA)
2) Complem e nts the T3904/SST3904/M MST3909.
3) Low capacitance.
zPackage, marking, and p ackaging specifications
zA bsolute maximum ratings (Ta=25°C)
zDimensions (Unit : mm)
UMT3906
SST3906
MMST3906
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
Min. Max.Typ.
−40
−40
−5
−50
−50
−0.25
−0.85
−0.95
−0.4
−
−
−
−0.65
Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Emitter cutoff current I
CES
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector cutoff current
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
−
DC current transfer ratio
Transition frequency
Collector output capacitance
h
FE
Cob
Cib
f
T
60
60
30
250 4.5
10
35
35
225
75
80
100 300
td
tr
tstg
tf
V
V
V
V
V
nA
nA
MHz
pF
pF
ns
ns
ns
ns
I
C
=
−10µA
I
C
=
−1mA
I
E
=
−10µA
V
CB
=
−30V
V
EB
=
−3V
V
CE
=
−1V, I
C
=
−0.1mA
V
CE
=
−1V, I
C
=
−1mA
V
CE
=
−1V, I
C
=
−10mA
V
CE
=
−1V, I
C
=
−50mA
V
CE
=
−1V, I
C
=
−100mA
V
CE
=
−20V, I
E
=10mA, f=100MHz
V
CB
=
−10V, f=100kHz, I
E
=0A
V
CB
=
−0.5V, f=100kHz, I
C
=0A
V
CC
=
−3V, V
BE(OFF)
=
−0.5V,I
C
=
−10mA, I
B1
=
−1mA
V
CC
=
−3V, V
BE(OFF)
=
−0.5V,I
C
=
−10mA, I
B1
=
−1mA
V
CC
=
−3V, I
C
=
−10mA, I
B1
=
−I
B2
=
−1mA
V
CC
=
−3V, I
C
=
−10mA, I
B1
=
−I
B2
=
−1mA
I
C
/I
B
=
−10mA/
−1mA
I
C
/I
B
=
−10mA/
−1mA
I
C
/I
B
=
−50mA/
−5mA
I
C
/I
B
=
−50mA/
−5mA
Type UMT3906
UMT3
R2A
T106
3000
SST3906
SST3
R2A
T116
3000
MMST3906
SMT3
R2A
T146
3000
Packaging type
Marking
Code
Basic ordering unit (pieces)
Parameter Symbol
V
CBO
V
CEO
V
EBO
Pd
Tj
Tstg
Limits
−40
−40
−5
6.2
0.35
SST3906,MMST3906
SST3906,MMST3906
UMT3906
150
−55
to
+150
Unit
V
V
V
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage I
O
−0.2
Collector current
Collector Power
dissipation
Junction temperature
Storage temperature
A
∗
W
W
∗
When mounted on a 7 5 0.6mm ceramic board.
++
UMT3906/SST3906/MMST3906
Transistors
Rev.B 2/4
zElectrical characteristics curves
0
8
6
4
2
10
200 10
I
B
=0µA5
10
15
20
25
30
35
40
45
50
Ta=25
°C
I
C
-COLLECTOR CURRENT (
mA)
V
CE
-COLLECTOR-EMITTER VOLTAGE (
V)
Fig.1 Grounded emitter output
characteristics
0.1 1.0 10 100
0.2
0.3
0.1
0
VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (V)
I
C
EMITTER COLLECTOR CURRENT (
mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
I
C /
I
B
=10
Ta=25
°C
0.1 101.0 100 1000
100
10
500
5
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs.collector current ( Ι )
Ta=25
°C
VCE=5V
1V
3V
0.1 101.0 100 1000
100
10
500
5
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (
mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
V
CE
=5V
Ta=125
°C
Ta=25
°C
Ta=
−55
°C
UMT3906/SST3906/MMST3906
Transistors
Rev.B 3/4
0.01 1.00.1 10 100
100
10
500
5
h
FE
-AC CURRENT GAIN
I
C
-COLLECTOR CURRENT (
mA)
Fig.5 AC current gain vs. collector current
Ta=25
°C
V
CE
=5V
f=1kHz
0.1 1.0 10 100
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE (V)
I
C
-COLLECTOR CURRENT (
mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
I
C
/ I
B
=10
Ta=25
°C
0.1 1.0 10 100
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
V
BE(ON)
-BASE EMITTER ON VOLTAGE (V)
I
C
-COLLECTOR CURRENT (
mA)
Fig.7
Grounded emitter propagation
characteristics
V
CE
=5V
Ta=25
°C
Ta=25
°C
I
C
/ I
B
=10
1.0 10 100
100
1000
1
10
t
on
-TURN ON TIME (
ns)
I
C
-COLLECTOR CURRENT (
mA)
Fig.8 Turn-on time vs. collector
current
V
CC
=3V 15V 40V
1.0 10 100
100
1000
1
10
t
r
-RISE TIME (
ns)
I
C
-COLLECTOR CURRENT (
mA)
Fig.9 Rise time vs. collector
current
Ta=25
°C
I
C
/ =I
B
=10
1.0 10 100
100
1000
10
t
S
-STORAGE TIME (
ns)
I
C
-COLLECTOR CURRENT (
mA)
Fig.10 Storage time vs. collector
current
I
C
=101
B1
=101
B2
Ta=25
°C
VCC=3V
40V
15V
1.0 10 100
100
1000
10
tf-FALL TIME (
ns)
I
C
-COLLECTOR CURRENT (mA)
Fig.11 Fall time vs. collector
current
I
C
=101
B1
=101
B2
Ta=25
°C
0.1 1 10 100
10
50
0.5
1
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE (
V)
Fig.12 Input / output capacitance
vs. voltage
f=1MHz
Ta=25
°C
Cib
Cob
UMT3906/SST3906/MMST3906
Transistors
Rev.B 4/4
0.1 1 10 100
10
1.0
100
0.1
V
CE
COLLECTOR-EMITTER VOLTAGE (
V)
I
C
-COLLECTOR CURRENT (
mA)
Fig.13 Gain bandwidth product
Ta=25
°C
100MHz
200MHz
200MHz
100MHz
300MHz
400MHz
300MHz
110 100
100
1000
10
fT-CORRENT GAIN-BANDWIDTH PRODUCT (MHz)
I
C
-COLLECTOR CURRENT (
mA)
Fig.14 Gain bandwidth product
vs. collector current
V
CE
=5V
Ta=25
°C
I
C
=1mA
hie=4.08k Ω
hfe=146
hre=2.20 10
−4
hoe=34.3µS
V
CE
=5V
f=270Hz
Ta=25
°C
+
0.1 1 10 100
10
1
100
0.1
h-PARAMETER NORMALIZED TO 1mA
I
C
-COLLECTOR CURRENT (mA)
Fig.15 h parameter vs. collector current
hfe
hoe
hie
hre
10 1k100 10k 100k
6
12
10
8
4
2
0
NF-NOISE FIGURE (
dB)
f-FREQUENCY (
Hz)
Fig.16 Noise vs. collector current
Ta=25
°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
V
CB
=25V
07525 50 100 125 150
100n
10n
1n
10µ
1µ
0.1n
I
CBO
-COLLECTOR CUTOFF CURRENT (A)
T
A
-AMBIENT TEMPERATURE (
°C)
Fig.17 Noise characteristics ( Ι )
0.01 0.1 1 10
10k
1k
100k
100
R
S
-SOURCE RESISTANCE (Ω)
I
C
-COLLECTOR CURRENT (
mA)
Fig.18 Noise characteristics ( ΙΙ )
Ta=25
°C
V
CE
=5V
f=10kHz
12dB
8dB
8dB
12dB
3dB
3dB
5dB
5dB
NF=1dB
NF=1dB
0.01 0.1 1 10
10k
1k
100k
100
R
S
-SOURCE RESISTANCE (Ω)
I
C
-COLLECTOR CURRENT (
mA)
Fig.19 Noise characteristics (ΙΙΙ)
Ta=25
°C
V
CE
=5V
f=30Hz
12dB
8dB
8dB
3dB
3dB
5dB
5dB
NF=1dB
NF=1dB
0.01 0.1 1 10
10k
1k
100k
100
R
S
-SOURCE RESISTANCE (Ω)
I
C
-COLLECTOR CURRENT (
mA)
Ta=25
°C
VCE=5V
f=10Hz
8dB
8dB
3dB
5dB
5dB
NF=3dB
NF=12dB
Fig.20 Noise characteristics ( )
ΙΛ
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Should you intend to use these products with equipment or devices which require an extremely high level
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It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix