Medium Power Transistor
TO-126
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Page <1> V1.019/12/12
Feature:
• Epitaxial Silicon Power Transistors
• Intended for use in Medium Power Linear Switching Applications
Absolute Maximum Ratings
Description Symbol BD237 Unit
Collector-Base Voltage VCBO 100
V
Collector-Emitter Voltage VCEO 80
Collector Emitter Voltage (RBE = 1K) VCER 100
Emitter Base Voltage VEBO 5
Collector Current IC2
A
Collector Peak Current ICM 6
Power Dissipation at TC = 25°C
Derate above 25°C PD
25 W
Power Dissipation at Ta = 25°C 1.25
10
W
mW/°C
Operating and Storage Junction
Temperature Range Tj, Tstg -65 to +150 °C
Thermal Characteristics
Junction to Case Rth (j-c) 100
°C/W
Junction to Ambient in Free Air Rth (j-a) 4.16
Pin Conguration:
1. Emitter
2. Collector
3. Base
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Page <2> V1.019/12/12
Medium Power Transistor
TO-126
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Description Part Number
Transistor, NPN, TO-126 BD237
Part Number Table
Electrical Characteristics (TC = 25°C unless specied otherwise)
*Pulse Test : Pulse Width = 300μs, Duty Cycle = 1.5%.
Description Symbol Test Condition Min. Typical Max. Unit
Collector Cut off Current ICBO
VCB = 100V, IE = 0
TC = 150°C
VCB = 100V, IE = 0
- - 100
2
µA
mA
Emitter Cut off Current IEBO VEB = 5V, IC = 0 - - 1 mA
Collector Emitter Sustaining
Voltage *VCEO (sus) IC = 0.1A, IB = 0 80 - -
V
Collector Emitter Saturation
Voltage *VCEO (sat) IC = 1A, IB = 0.1A - - 0.6
Base Emitter Voltage *VBE (on) IC = 1A, VCE = 2V - - 1.3
DC Current Gain *hFE
IC = 150mA, VCE = 2V
IC = 1A, VCE = 2V
40
25 - - -
Current Gain Bandwidth
Product fTIC = 250mA, VCE = 10V 3 - - MHz
*hFE1/hFE2
Matched
Pairs IC = 250mA, VCE = 2V - 1.6 - -
Dimensions Min. Max.
A 7.4 7.8
B 10.5 10.8
C 2.4 2.7
D 0.7 0.9
E 2.25 (Typical)
F 0.49 0.75
G 4.5 (Typical)
L 15.7 (Typical)
M 1.27 (Typical)
N 3.75 (Typical)
P 3 3.2
S 2.5 (Typical)
Dimensions : Millimetres
Pin Conguration:
1. Emitter
2. Collector
3. Base
